BE660173A - - Google Patents
Info
- Publication number
- BE660173A BE660173A BE660173DA BE660173A BE 660173 A BE660173 A BE 660173A BE 660173D A BE660173D A BE 660173DA BE 660173 A BE660173 A BE 660173A
- Authority
- BE
- Belgium
- Prior art keywords
- liquid
- peltier
- solid
- single crystals
- effect
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE660173A true BE660173A (OSRAM) |
Family
ID=207119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE660173D BE660173A (OSRAM) |
Country Status (1)
| Country | Link |
|---|---|
| BE (1) | BE660173A (OSRAM) |
-
0
- BE BE660173D patent/BE660173A/fr unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013126943A (ja) | ドープ半導体単結晶 | |
| Deitch et al. | Bulk single crystal growth of silicon-germanium | |
| BE660173A (OSRAM) | ||
| Arivanandhan et al. | Bulk growth of InGaSb alloy semiconductor under terrestrial conditions: a preliminary study for microgravity experiments at ISS | |
| FR2461027A1 (fr) | Procede pour la realisation de composes semi-conducteurs ternaires monocristallins | |
| JP2006117524A (ja) | 高品質単結晶及びその成長方法 | |
| EP0133084B1 (fr) | Procédé de fabrication de monocristaux de germanate de bismuth à fort rendement de scintillation | |
| EP4174221A1 (fr) | Procédé de fabrication d'un germe de saphir monocristallin ainsi que d'un monocristal de saphir à orientation cristallographique préférentielle et composants d habillage et fonctionnels pour l horlogerie et la bijouterie | |
| JPS6317291A (ja) | 結晶成長方法及びその装置 | |
| JP2010132470A (ja) | Fz法シリコン単結晶の製造方法 | |
| JP3253005B2 (ja) | 固溶体単結晶の製造方法 | |
| JP2734820B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPH03137090A (ja) | シリコン単結晶引上げ方法 | |
| JPH0543384A (ja) | 結晶成長方法 | |
| FR2502649A1 (fr) | Procede de fabrication d'un compose monocristallin du groupe iiib-vb | |
| Godines et al. | Growth of low-etch-pit density InSb single crystals by the Czochralski method | |
| JP6400946B2 (ja) | Si‐Ge系固溶体単結晶の製造方法 | |
| JP2922039B2 (ja) | 単結晶の成長方法 | |
| JPH05139884A (ja) | 単結晶の製造方法 | |
| JP2535773B2 (ja) | 酸化物単結晶の製造方法とその装置 | |
| CH721280A2 (fr) | Procédé de fabrication de saphir en barre | |
| JPH0280391A (ja) | 半導体単結晶引上げにおけるドーパントの添加方法 | |
| FR2572098A1 (fr) | Procede de fabrication de cristaux de composes au moins ternaires par transfert d'une zone de solvant | |
| EP4553196A1 (fr) | Procédé de fabrication de saphir en barre | |
| JP2001072488A (ja) | 固溶体単結晶の製造方法 |