BE658975A - - Google Patents
Info
- Publication number
- BE658975A BE658975A BE658975DA BE658975A BE 658975 A BE658975 A BE 658975A BE 658975D A BE658975D A BE 658975DA BE 658975 A BE658975 A BE 658975A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/17—Vapor-liquid-solid
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US340701A US3346414A (en) | 1964-01-28 | 1964-01-28 | Vapor-liquid-solid crystal growth technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE658975A true BE658975A (es) | 1965-05-17 |
Family
ID=23334570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE658975D BE658975A (es) | 1964-01-28 | 1965-01-28 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3346414A (es) |
| BE (1) | BE658975A (es) |
| DE (1) | DE1290921B (es) |
| GB (1) | GB1070991A (es) |
| NL (1) | NL6500600A (es) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3446659A (en) * | 1966-09-16 | 1969-05-27 | Texas Instruments Inc | Apparatus and process for growing noncontaminated thermal oxide on silicon |
| US3462320A (en) * | 1966-11-21 | 1969-08-19 | Bell Telephone Labor Inc | Solution growth of nitrogen doped gallium phosphide |
| US3493431A (en) * | 1966-11-25 | 1970-02-03 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
| NL143436B (nl) * | 1966-12-14 | 1974-10-15 | Philips Nv | Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen. |
| US3476593A (en) * | 1967-01-24 | 1969-11-04 | Fairchild Camera Instr Co | Method of forming gallium arsenide films by vacuum deposition techniques |
| NL6705847A (es) * | 1967-04-26 | 1968-10-28 | ||
| US3505127A (en) * | 1967-09-21 | 1970-04-07 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique for the production of needle-like single crystals |
| US3536538A (en) * | 1968-03-29 | 1970-10-27 | Bell Telephone Labor Inc | Crystal growth technique |
| NL6805300A (es) * | 1968-04-13 | 1969-10-15 | ||
| US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
| US4058418A (en) * | 1974-04-01 | 1977-11-15 | Solarex Corporation | Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth |
| US4155781A (en) * | 1976-09-03 | 1979-05-22 | Siemens Aktiengesellschaft | Method of manufacturing solar cells, utilizing single-crystal whisker growth |
| US4132571A (en) * | 1977-02-03 | 1979-01-02 | International Business Machines Corporation | Growth of polycrystalline semiconductor film with intermetallic nucleating layer |
| FR2407892A1 (fr) * | 1977-11-04 | 1979-06-01 | Rhone Poulenc Ind | Procede de fabrication de silicium pour la conversion photovoltaique |
| US4789537A (en) * | 1985-12-30 | 1988-12-06 | The United States Of America As Represented By The United States Department Of Energy | Prealloyed catalyst for growing silicon carbide whiskers |
| US4702901A (en) * | 1986-03-12 | 1987-10-27 | The United States Of America As Represented By The United States Department Of Energy | Process for growing silicon carbide whiskers by undercooling |
| JPH0782996B2 (ja) * | 1986-03-28 | 1995-09-06 | キヤノン株式会社 | 結晶の形成方法 |
| JP2670442B2 (ja) * | 1986-03-31 | 1997-10-29 | キヤノン株式会社 | 結晶の形成方法 |
| US5322711A (en) * | 1989-07-21 | 1994-06-21 | Minnesota Mining And Manufacturing Company | Continuous method of covering inorganic fibrous material with particulates |
| US5405654A (en) * | 1989-07-21 | 1995-04-11 | Minnesota Mining And Manufacturing Company | Self-cleaning chemical vapor deposition apparatus and method |
| US5364660A (en) * | 1989-07-21 | 1994-11-15 | Minnesota Mining And Manufacturing Company | Continuous atmospheric pressure CVD coating of fibers |
| US7686886B2 (en) * | 2006-09-26 | 2010-03-30 | International Business Machines Corporation | Controlled shape semiconductor layer by selective epitaxy under seed structure |
| US7449065B1 (en) | 2006-12-02 | 2008-11-11 | Ohio Aerospace Institute | Method for the growth of large low-defect single crystals |
| US8153482B2 (en) * | 2008-09-22 | 2012-04-10 | Sharp Laboratories Of America, Inc. | Well-structure anti-punch-through microwire device |
| WO2015143206A1 (en) | 2014-03-19 | 2015-09-24 | Solar-Tectic, Llc | Method of making ceramic glass |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE509317A (es) * | 1951-03-07 | 1900-01-01 | ||
| DE1042553B (de) * | 1953-09-25 | 1958-11-06 | Int Standard Electric Corp | Verfahren zur Herstellung von Silicium grosser Reinheit |
| BE544843A (es) * | 1955-02-25 | |||
| BE547665A (es) * | 1955-06-28 | |||
| DE1048638B (de) * | 1957-07-02 | 1959-01-15 | Siemens &. Halske Aktiengesellschaft, Berlin und München | Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion |
-
1964
- 1964-01-28 US US340701A patent/US3346414A/en not_active Expired - Lifetime
-
1965
- 1965-01-18 NL NL6500600A patent/NL6500600A/xx unknown
- 1965-01-27 DE DEW38414A patent/DE1290921B/de active Pending
- 1965-01-27 GB GB3521/65A patent/GB1070991A/en not_active Expired
- 1965-01-28 BE BE658975D patent/BE658975A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6500600A (es) | 1965-07-29 |
| DE1290921B (de) | 1969-03-20 |
| GB1070991A (en) | 1967-06-07 |
| US3346414A (en) | 1967-10-10 |