BE654804A - - Google Patents

Info

Publication number
BE654804A
BE654804A BE654804A BE654804A BE654804A BE 654804 A BE654804 A BE 654804A BE 654804 A BE654804 A BE 654804A BE 654804 A BE654804 A BE 654804A BE 654804 A BE654804 A BE 654804A
Authority
BE
Belgium
Application number
BE654804A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE654804A publication Critical patent/BE654804A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • H10D62/135Non-interconnected multi-emitter structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • H10D10/056Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
BE654804A 1963-10-24 1964-10-23 BE654804A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31867863A 1963-10-24 1963-10-24

Publications (1)

Publication Number Publication Date
BE654804A true BE654804A (https=) 1965-02-15

Family

ID=23239151

Family Applications (1)

Application Number Title Priority Date Filing Date
BE654804A BE654804A (https=) 1963-10-24 1964-10-23

Country Status (8)

Country Link
US (1) US3434019A (https=)
JP (1) JPS4844274B1 (https=)
BE (1) BE654804A (https=)
DE (1) DE1489250C3 (https=)
ES (1) ES305219A1 (https=)
GB (1) GB1072778A (https=)
NL (2) NL6412351A (https=)
SE (1) SE300659B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039105Y1 (https=) * 1969-04-08 1975-11-11
US3582726A (en) * 1969-09-03 1971-06-01 Microwave Semiconductor Corp High frequency power transistor having a plurality of discrete base areas
US3675092A (en) * 1970-07-13 1972-07-04 Signetics Corp Surface controlled avalanche semiconductor device
JPS5258379A (en) * 1975-11-08 1977-05-13 Toshiba Corp Production of semiconductor element
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPS56162864A (en) * 1980-05-19 1981-12-15 Hitachi Ltd Semiconductor device
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
DE69321965T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Leistungs-Chip-Typ und Packungszusammenbau
EP0660402B1 (en) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power semiconductor device
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
DE69329999T2 (de) * 1993-12-29 2001-09-13 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Verfahren zur Herstellung integrierter Schaltungen, insbesondere intelligenter Leistungsanordnungen
EP0697728B1 (en) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. MOS-technology power device chip and package assembly
JP5979994B2 (ja) * 2012-06-12 2016-08-31 新光電気工業株式会社 電子装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL233303A (https=) * 1957-11-30
DE1130523B (de) * 1958-01-22 1962-05-30 Siemens Ag Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
US3174112A (en) * 1960-07-29 1965-03-16 Westinghouse Electric Corp Semiconductor devices providing the functions of a plurality of conventional components
NL281568A (https=) * 1961-08-16
US3210620A (en) * 1961-10-04 1965-10-05 Westinghouse Electric Corp Semiconductor device providing diode functions
US3223904A (en) * 1962-02-19 1965-12-14 Motorola Inc Field effect device and method of manufacturing the same
US3214652A (en) * 1962-03-19 1965-10-26 Motorola Inc Transistor comprising prong-shaped emitter electrode
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
NL128995C (https=) * 1962-08-03
BE636317A (https=) * 1962-08-23 1900-01-01
US3191070A (en) * 1963-01-21 1965-06-22 Fairchild Camera Instr Co Transistor agg device

Also Published As

Publication number Publication date
ES305219A1 (es) 1965-03-16
DE1489250C3 (de) 1981-07-02
JPS4844274B1 (https=) 1973-12-24
NL136562C (https=)
NL6412351A (https=) 1965-04-26
SE300659B (https=) 1968-05-06
GB1072778A (en) 1967-06-21
DE1489250A1 (de) 1972-04-27
DE1489250B2 (de) 1974-02-21
US3434019A (en) 1969-03-18

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