BE642748A - - Google Patents
Info
- Publication number
- BE642748A BE642748A BE642748A BE642748A BE642748A BE 642748 A BE642748 A BE 642748A BE 642748 A BE642748 A BE 642748A BE 642748 A BE642748 A BE 642748A BE 642748 A BE642748 A BE 642748A
- Authority
- BE
- Belgium
- Prior art keywords
- type
- wafer
- junction
- conductivity
- region
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000005275 alloying Methods 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 230000015556 catabolic process Effects 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 4
- 238000005554 pickling Methods 0.000 claims description 3
- 239000011343 solid material Substances 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000001747 exhibiting effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101150005771 ATR1 gene Proteins 0.000 description 1
- 241000238876 Acari Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 101150059273 PTR1 gene Proteins 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB250063 | 1963-01-21 | ||
| GB678363 | 1963-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE642748A true BE642748A (enrdf_load_html_response) | 1964-05-15 |
Family
ID=26237556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE642748A BE642748A (enrdf_load_html_response) | 1963-01-21 | 1964-01-20 |
Country Status (1)
| Country | Link |
|---|---|
| BE (1) | BE642748A (enrdf_load_html_response) |
-
1964
- 1964-01-20 BE BE642748A patent/BE642748A/fr unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2477771A1 (fr) | Procede pour la realisation d'un dispositif semiconducteur a haute tension de blocage et dispositif semiconducteur ainsi realise | |
| EP1330836A1 (fr) | Procede de realisation d'une diode schottky dans du carbure de silicium | |
| CH493094A (fr) | Dispositif semiconducteurs multicanaux à effet de champ | |
| EP0199424B1 (fr) | Composant semiconducteur du type planar à structure d'anneaux de garde, famille de tels composants et procédé de réalisation | |
| FR2581482A1 (fr) | Photodiode pin a faible courant de fuite | |
| EP1073110A1 (fr) | Procédé de fabrication de composants unipolaires | |
| FR2475295A1 (fr) | Diode et dispositif rom ou eeprom utilisant cette diode | |
| FR3060841A1 (fr) | Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes | |
| EP2989656B1 (fr) | Procédé de fabrication d'une diode schottky sur un substrat en diamant | |
| FR2460040A1 (fr) | Procede pour realiser une diode schottky a tenue en tension amelioree | |
| FR2666932A1 (fr) | Dispositif semi-conducteur presentant une haute tension de claquage et une faible resistance et procede pour sa fabrication. | |
| FR2474763A1 (fr) | Transistor a film mince | |
| FR2488734A1 (fr) | Diode zener et procede pour la fabriquer | |
| EP3396720A1 (fr) | Procede de realisation d'une matrice de photodiodes a structures en mesa | |
| EP0503731B1 (fr) | Procédé de réalisation d'un transistor à haute mobilité électronique intégré | |
| EP3331030B1 (fr) | Structure et procede de passivation | |
| BE642748A (enrdf_load_html_response) | ||
| FR3007574A1 (fr) | Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure semiconductrice | |
| FR3129248A1 (fr) | Photodiode germanium à courant d’obscurité réduit comportant une portion intermédiaire périphérique à base de SiGe/Ge | |
| FR2462782A1 (fr) | Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede | |
| EP0012324B1 (fr) | Procédé de formation de contacts sur des régions semi-conductrices peu profondes | |
| FR3009433A1 (fr) | Capteur d'images a illumination face arriere a faible courant d'obscurite | |
| EP0126499A1 (fr) | Procédé de réalisation d'un transistor bipolaire haute tension | |
| EP0033429A2 (fr) | Cellule photovoltaique applicable à la fabrication de piles solaires | |
| FR2573249A1 (fr) | Procede pour la preparation d'elements semi-conducteurs a couches minces, et en particulier de cellules solaires |