BE642102A - - Google Patents
Info
- Publication number
- BE642102A BE642102A BE642102A BE642102A BE642102A BE 642102 A BE642102 A BE 642102A BE 642102 A BE642102 A BE 642102A BE 642102 A BE642102 A BE 642102A BE 642102 A BE642102 A BE 642102A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US249496A US3362858A (en) | 1963-01-04 | 1963-01-04 | Fabrication of semiconductor controlled rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE642102A true BE642102A (https=) | 1964-05-04 |
Family
ID=22943696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE642102A BE642102A (https=) | 1963-01-04 | 1964-01-03 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3362858A (https=) |
| BE (1) | BE642102A (https=) |
| FR (1) | FR1378698A (https=) |
| GB (1) | GB1018400A (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3475664A (en) * | 1965-06-30 | 1969-10-28 | Texas Instruments Inc | Ambient atmosphere isolated semiconductor devices |
| US3642544A (en) * | 1965-08-02 | 1972-02-15 | Ibm | Method of fabricating solid-state devices |
| US3475235A (en) * | 1966-10-05 | 1969-10-28 | Westinghouse Electric Corp | Process for fabricating a semiconductor device |
| US3562610A (en) * | 1967-05-25 | 1971-02-09 | Westinghouse Electric Corp | Controlled rectifier with improved switching characteristics |
| US3852128A (en) * | 1969-02-22 | 1974-12-03 | Licentia Gmbh | Method of diffusing impurities into semiconductor wafers |
| FR2108781B1 (https=) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
| US3943016A (en) * | 1970-12-07 | 1976-03-09 | General Electric Company | Gallium-phosphorus simultaneous diffusion process |
| JPS6011457B2 (ja) * | 1973-04-02 | 1985-03-26 | 株式会社日立製作所 | デイポジシヨン法 |
| US3914138A (en) * | 1974-08-16 | 1975-10-21 | Westinghouse Electric Corp | Method of making semiconductor devices by single step diffusion |
| JPS5942989B2 (ja) * | 1977-01-24 | 1984-10-18 | 株式会社日立製作所 | 高耐圧半導体素子およびその製造方法 |
| US4264383A (en) * | 1979-08-23 | 1981-04-28 | Westinghouse Electric Corp. | Technique for making asymmetric thyristors |
| US4611222A (en) * | 1979-10-12 | 1986-09-09 | Westinghouse Electric Corp. | Solid-state switch |
| JPS5824006B2 (ja) * | 1980-01-30 | 1983-05-18 | 株式会社日立製作所 | 不純物拡散法 |
| FR2815471B1 (fr) * | 2000-10-12 | 2003-02-07 | St Microelectronics Sa | Composant vertical a tenue en tension elevee |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2705767A (en) * | 1952-11-18 | 1955-04-05 | Gen Electric | P-n junction transistor |
| NL121810C (https=) * | 1955-11-04 | |||
| US2819990A (en) * | 1956-04-26 | 1958-01-14 | Bell Telephone Labor Inc | Treatment of semiconductive bodies |
| NL241124A (https=) * | 1958-07-09 | |||
| US3041213A (en) * | 1958-11-17 | 1962-06-26 | Texas Instruments Inc | Diffused junction semiconductor device and method of making |
| NL276751A (https=) * | 1961-04-10 |
-
1963
- 1963-01-04 US US249496A patent/US3362858A/en not_active Expired - Lifetime
- 1963-12-31 GB GB51279/63A patent/GB1018400A/en not_active Expired
-
1964
- 1964-01-03 FR FR959250A patent/FR1378698A/fr not_active Expired
- 1964-01-03 BE BE642102A patent/BE642102A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3362858A (en) | 1968-01-09 |
| FR1378698A (fr) | 1964-11-13 |
| GB1018400A (en) | 1966-01-26 |