| US3154692A
              (en)
            
            * | 1960-01-08 | 1964-10-27 | Clevite Corp | Voltage regulating semiconductor device | 
        
          | US3023347A
              (en)
            
            * | 1960-07-15 | 1962-02-27 | Westinghouse Electric Corp | Oscillator having predetermined temperature-frequency characteristics | 
        
          | US3183129A
              (en)
            
            * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor | 
        
          | US3173101A
              (en)
            
            * | 1961-02-15 | 1965-03-09 | Westinghouse Electric Corp | Monolithic two stage unipolar-bipolar semiconductor amplifier device | 
        
          | US3142021A
              (en)
            
            * | 1961-02-27 | 1964-07-21 | Westinghouse Electric Corp | Monolithic semiconductor amplifier providing two amplifier stages | 
        
          | US3193740A
              (en)
            
            * | 1961-09-16 | 1965-07-06 | Nippon Electric Co | Semiconductor device | 
        
          | BE632999A
              (forum.php)
            
            * | 1962-06-01 |  |  |  | 
        
          | GB1039342A
              (en)
            
            * | 1963-04-17 | 1966-08-17 | Standard Telephones Cables Ltd | Improvements in or relating to decoding equipment | 
        
          | US3404321A
              (en)
            
            * | 1963-01-29 | 1968-10-01 | Nippon Electric Co | Transistor body enclosing a submerged integrated resistor | 
        
          | US3217215A
              (en)
            
            * | 1963-07-05 | 1965-11-09 | Int Rectifier Corp | Field effect transistor | 
        
          | US3460004A
              (en)
            
            * | 1963-08-20 | 1969-08-05 | Siemens Ag | Mechanical to electrical semiconductor transducer | 
        
          | US3354364A
              (en)
            
            * | 1963-08-22 | 1967-11-21 | Nippon Electric Co | Discontinuous resistance semiconductor device | 
        
          | US3343026A
              (en)
            
            * | 1963-11-27 | 1967-09-19 | H P Associates | Semi-conductive radiation source | 
        
          | US3343114A
              (en)
            
            * | 1963-12-30 | 1967-09-19 | Texas Instruments Inc | Temperature transducer | 
        
          | US3265905A
              (en)
            
            * | 1964-02-06 | 1966-08-09 | Us Army | Integrated semiconductor resistance element | 
        
          | US3304469A
              (en)
            
            * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode | 
        
          | US3351824A
              (en)
            
            * | 1964-04-28 | 1967-11-07 | Northern Electric Co | Constant current device | 
        
          | US3303464A
              (en)
            
            * | 1964-05-27 | 1967-02-07 | Harris Intertype Corp | Ring-sum logic circuit | 
        
          | US3320568A
              (en)
            
            * | 1964-08-10 | 1967-05-16 | Raytheon Co | Sensitized notched transducers | 
        
          | US3400390A
              (en)
            
            * | 1964-10-05 | 1968-09-03 | Schlumberger Technology Corp | Signal converter for converting a binary signal to a reciprocal analog signal | 
        
          | US3435302A
              (en)
            
            * | 1964-11-26 | 1969-03-25 | Sumitomo Electric Industries | Constant current semiconductor device | 
        
          | GB1194307A
              (en)
            
            * | 1969-03-07 | 1970-06-10 | Ibm | Digital to Analog Conversion. | 
        
          | US3612773A
              (en)
            
            * | 1969-07-22 | 1971-10-12 | Bell Telephone Labor Inc | Electronic frequency switching circuit for multifrequency signal generator | 
        
          | US3646587A
              (en)
            
            * | 1969-12-16 | 1972-02-29 | Hughes Aircraft Co | Digital-to-analog converter using field effect transistor switch resistors | 
        
          | US3755807A
              (en)
            
            * | 1972-02-15 | 1973-08-28 | Collins Radio Co | Resistor-ladder circuit | 
        
          | DE2528090C2
              (de)
            
            * | 1974-07-01 | 1985-06-05 | General Electric Co., Schenectady, N.Y. | Mehrphasen-Stoßspannungsunterdrücker | 
        
          | US4496963A
              (en)
            
            * | 1976-08-20 | 1985-01-29 | National Semiconductor Corporation | Semiconductor device with an ion implanted stabilization layer | 
        
          | US4187513A
              (en)
            
            * | 1977-11-30 | 1980-02-05 | Eaton Corporation | Solid state current limiter | 
        
          | US4209781A
              (en)
            
            * | 1978-05-19 | 1980-06-24 | Texas Instruments Incorporated | MOS Digital-to-analog converter employing scaled field effect devices | 
        
          | DE2939455C2
              (de)
            
            * | 1979-09-28 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung zur Umsetzung von Digital-Signalen, insbesondere PCM-Signalen, in diesen entsprechende Analog-Signale, mit einem R-2R-Kettennetzwerk | 
        
          | FR2469836A1
              (fr)
            
            * | 1979-11-16 | 1981-05-22 | Hennion Bernard | Systeme de codage et decodage a multiniveaux en courant | 
        
          | DE3005301C2
              (de)
            
            * | 1980-02-13 | 1985-11-21 | Telefunken electronic GmbH, 7100 Heilbronn | Varaktor- oder Mischerdiode | 
        
          | DE3018542A1
              (de)
            
            * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb | 
        
          | US4339707A
              (en)
            
            * | 1980-12-24 | 1982-07-13 | Honeywell Inc. | Band gap voltage regulator | 
        
          | US4472648A
              (en)
            
            * | 1981-08-25 | 1984-09-18 | Harris Corporation | Transistor circuit for reducing gate leakage current in a JFET | 
        
          | US4633281A
              (en)
            
            * | 1984-06-08 | 1986-12-30 | Eaton Corporation | Dual stack power JFET with buried field shaping depletion regions | 
        
          | US4603319A
              (en)
            
            * | 1984-08-27 | 1986-07-29 | Rca Corporation | Digital-to-analog converter with reduced output capacitance | 
        
          | FR2592250B1
              (fr)
            
            * | 1985-12-24 | 1990-07-13 | Thomson Csf | Source de courant programmable et convertisseur numerique-analogique comportant une telle source. | 
        
          | FR2623350B1
              (fr)
            
            * | 1987-11-17 | 1990-02-16 | Thomson Hybrides Microondes | Convertisseur numerique analogique a haute stabilite de tension de sortie | 
        
          | US5021856A
              (en)
            
            * | 1989-03-15 | 1991-06-04 | Plessey Overseas Limited | Universal cell for bipolar NPN and PNP transistors and resistive elements | 
        
          | DE19580604T1
              (de)
            
            * | 1994-06-09 | 1997-05-07 | Chipscale Inc | Widerstandsfabrikation | 
        
          | US10250210B2
              (en) | 2016-07-05 | 2019-04-02 | Dialog Semiconductor (Uk) Limited | Circuit and method for a high common mode rejection amplifier by using a digitally controlled gain trim circuit |