BE561652A - - Google Patents

Info

Publication number
BE561652A
BE561652A BE561652DA BE561652A BE 561652 A BE561652 A BE 561652A BE 561652D A BE561652D A BE 561652DA BE 561652 A BE561652 A BE 561652A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE561652A publication Critical patent/BE561652A/xx
Priority claimed from DES29621A external-priority patent/DE1031893B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
BE561652D 1952-08-01 BE561652A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES29621A DE1031893B (de) 1952-08-01 1952-08-01 Verfahren zur aeusseren Formgebung von Halbleiteranordnungen, insbesondere fuer Gleichrichter- und Verstaerkerzwecke mit Halbleitern aus Germanium oder Silizium
GB3142656A GB831304A (en) 1952-08-01 1956-10-16 Improvements in or relating to refining processes for semiconductor and other materials

Publications (1)

Publication Number Publication Date
BE561652A true BE561652A (ja)

Family

ID=32394886

Family Applications (3)

Application Number Title Priority Date Filing Date
BE552391D BE552391A (ja) 1952-08-01
BE521845D BE521845A (ja) 1952-08-01
BE561652D BE561652A (ja) 1952-08-01

Family Applications Before (2)

Application Number Title Priority Date Filing Date
BE552391D BE552391A (ja) 1952-08-01
BE521845D BE521845A (ja) 1952-08-01

Country Status (6)

Country Link
US (1) US2914397A (ja)
BE (3) BE561652A (ja)
CH (2) CH320916A (ja)
FR (3) FR1081736A (ja)
GB (2) GB721026A (ja)
NL (2) NL96829C (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977180C (de) * 1955-03-05 1965-06-24 Siemens Ag Verfahren zum elektrolytischen oertlich begrenzten Abtragen wie Bohren und Zerteilen halbleitenden kristallinen Materials
GB918028A (en) * 1958-09-04 1963-02-13 Philips Electrical Ind Ltd Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial
US3233977A (en) * 1961-05-31 1966-02-08 Westinghouse Electric Corp Furnace with means for adjusting a crucible in growing crystals
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2125173A (en) * 1932-07-29 1938-07-26 Union Carbide & Carbon Corp Apparatus for treating the defective surface metal of billets or the like
US2477411A (en) * 1944-06-10 1949-07-26 Linde Air Prod Co Metal surface conditioning apparatus and process
BE510303A (ja) * 1951-11-16
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken

Also Published As

Publication number Publication date
FR72391E (fr) 1960-03-31
BE521845A (ja)
NL96829C (ja)
US2914397A (en) 1959-11-24
NL180311B (nl)
GB831303A (en) 1960-03-30
FR1081736A (fr) 1954-12-22
FR71626E (fr) 1960-01-13
BE552391A (ja)
GB721026A (en) 1954-12-29
CH320916A (de) 1957-04-15
CH360207A (de) 1962-02-15

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