BE561652A - - Google Patents

Info

Publication number
BE561652A
BE561652A BE561652DA BE561652A BE 561652 A BE561652 A BE 561652A BE 561652D A BE561652D A BE 561652DA BE 561652 A BE561652 A BE 561652A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE561652A publication Critical patent/BE561652A/xx
Priority claimed from DES29621A external-priority patent/DE1031893B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/61Electrolytic etching
    • H10P50/613Electrolytic etching of Group IV materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
BE561652D 1952-08-01 BE561652A (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES29621A DE1031893B (de) 1952-08-01 1952-08-01 Verfahren zur aeusseren Formgebung von Halbleiteranordnungen, insbesondere fuer Gleichrichter- und Verstaerkerzwecke mit Halbleitern aus Germanium oder Silizium
GB31426/56A GB831304A (en) 1952-08-01 1956-10-16 Improvements in or relating to refining processes for semiconductor and other materials

Publications (1)

Publication Number Publication Date
BE561652A true BE561652A (https=)

Family

ID=32394886

Family Applications (3)

Application Number Title Priority Date Filing Date
BE521845D BE521845A (https=) 1952-08-01
BE552391D BE552391A (https=) 1952-08-01
BE561652D BE561652A (https=) 1952-08-01

Family Applications Before (2)

Application Number Title Priority Date Filing Date
BE521845D BE521845A (https=) 1952-08-01
BE552391D BE552391A (https=) 1952-08-01

Country Status (6)

Country Link
US (1) US2914397A (https=)
BE (3) BE561652A (https=)
CH (2) CH320916A (https=)
FR (3) FR1081736A (https=)
GB (2) GB721026A (https=)
NL (2) NL180311B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977180C (de) * 1955-03-05 1965-06-24 Siemens Ag Verfahren zum elektrolytischen oertlich begrenzten Abtragen wie Bohren und Zerteilen halbleitenden kristallinen Materials
GB918028A (en) * 1958-09-04 1963-02-13 Philips Electrical Ind Ltd Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial
US3233977A (en) * 1961-05-31 1966-02-08 Westinghouse Electric Corp Furnace with means for adjusting a crucible in growing crystals
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2125173A (en) * 1932-07-29 1938-07-26 Union Carbide & Carbon Corp Apparatus for treating the defective surface metal of billets or the like
US2477411A (en) * 1944-06-10 1949-07-26 Linde Air Prod Co Metal surface conditioning apparatus and process
NL168491B (https=) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken

Also Published As

Publication number Publication date
FR71626E (fr) 1960-01-13
NL96829C (https=)
FR72391E (fr) 1960-03-31
GB831303A (en) 1960-03-30
NL180311B (nl)
CH320916A (de) 1957-04-15
US2914397A (en) 1959-11-24
GB721026A (en) 1954-12-29
CH360207A (de) 1962-02-15
BE521845A (https=)
FR1081736A (fr) 1954-12-22
BE552391A (https=)

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