BE552308A - - Google Patents
Info
- Publication number
- BE552308A BE552308A BE552308DA BE552308A BE 552308 A BE552308 A BE 552308A BE 552308D A BE552308D A BE 552308DA BE 552308 A BE552308 A BE 552308A
- Authority
- BE
- Belgium
- Prior art keywords
- temperature
- conduction
- impurity
- emi
- type
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/00—
-
- H10P95/00—
-
- H10P95/50—
-
- H10W42/00—
-
- H10W72/5363—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3119856 | 1956-10-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE552308A true BE552308A (index.php) |
Family
ID=10319472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE552308D BE552308A (index.php) | 1956-10-29 |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE552308A (index.php) |
| CH (1) | CH347267A (index.php) |
| FR (1) | FR1161276A (index.php) |
| NL (2) | NL211806A (index.php) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1187326B (de) * | 1958-08-13 | 1965-02-18 | Western Electric Co | Verfahren zur Herstellung einer Silizium-Schaltdiode |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL239515A (index.php) * | 1958-06-18 | |||
| NL123266C (index.php) * | 1958-06-25 |
-
0
- BE BE552308D patent/BE552308A/fr unknown
- NL NL111649D patent/NL111649C/xx active
- NL NL211806D patent/NL211806A/xx unknown
-
1956
- 1956-10-30 CH CH347267D patent/CH347267A/de unknown
- 1956-10-31 FR FR1161276D patent/FR1161276A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1187326B (de) * | 1958-08-13 | 1965-02-18 | Western Electric Co | Verfahren zur Herstellung einer Silizium-Schaltdiode |
Also Published As
| Publication number | Publication date |
|---|---|
| CH347267A (de) | 1960-06-30 |
| NL111649C (index.php) | |
| NL211806A (index.php) | |
| FR1161276A (fr) | 1958-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2786425B1 (fr) | Diode p/n à hétérostructure controlée autopositionnée sur hgcdte pour imageurs infrarouges | |
| EP0008661A1 (fr) | Procédé de traitement thermique préliminaire de corps semiconducteurs pour en accroitre ulterieurement l'effet de piegeage interne | |
| EP2107619A2 (fr) | Procédé de traitement d'un substrat semi-conducteur par activation thermique d'éléments légers | |
| FR2485811A1 (fr) | Dispositif semi-conducteur a jonction pn, et procede de fabrication de celui-ci | |
| FR2489594A1 (fr) | Procede de fabrication de thyristors en reduisant la charge de recouvrement en inverse sans accroitre sensiblement la chute de tension directe | |
| FR2598259A1 (fr) | Diode zener enterree et procede de fabrication. | |
| FR2481518A1 (fr) | Procede de realisation d'un dispositif semiconducteur comportant des transistors a effet de champ complementaires | |
| FR2468208A1 (fr) | Dispositif semiconducteur avec une diode zener | |
| EP3347917B1 (fr) | Dispositif electroluminescent a capteur de lumiere integre | |
| BE552308A (index.php) | ||
| EP0069634B1 (fr) | Diode Zener compensée en température et stable sous irradiation et procédé de fabrication d'une telle diode | |
| WO1981000932A1 (en) | Ohmic contact to p-type inp or ingaasp | |
| FR2577668A1 (fr) | Procede de realisation d'un detecteur photoelectrique du type photoresistance de grande sensibilite | |
| LU83831A1 (fr) | Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus | |
| FR2961013A1 (fr) | Procede pour eliminer des impuretes residuelles extrinseques dans un substrat en zno ou en znmgo de type n, et pour realiser un dopage de type p de ce substrat. | |
| FR2530081A1 (fr) | Procede pour la fabrication d'une diode electroluminescente au znse emettant en lumiere verte et diodes conformes a celles ainsi obtenues | |
| JP7218314B2 (ja) | 半導体装置 | |
| US5098851A (en) | Fabricating a semiconductor photodetector by annealing to smooth the PN junction | |
| EP3671864B1 (fr) | Procede de fabrication d'une jonction a effet tunnel inter-bandes | |
| EP3673518B1 (fr) | Procédé amélioré de dopage de cellule solaire | |
| EP0756331B1 (fr) | Composant limiteur de courant et procédé de réalisation | |
| JPH0442835B2 (index.php) | ||
| EP4391786B1 (fr) | Un dispositif mémoire à changement de phase et un procédé de fabrication d'un dispositif mémoire à changement de phase | |
| EP0032069B1 (fr) | Procédé d'ajustement du coefficient de température d'une diode de référence et diode de référence obtenue | |
| FR2463508A1 (fr) | Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene |