BE514927A - - Google Patents

Info

Publication number
BE514927A
BE514927A BE514927DA BE514927A BE 514927 A BE514927 A BE 514927A BE 514927D A BE514927D A BE 514927DA BE 514927 A BE514927 A BE 514927A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE514927A publication Critical patent/BE514927A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2923Materials being conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
BE514927D 1952-01-22 BE514927A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE307775X 1952-01-22

Publications (1)

Publication Number Publication Date
BE514927A true BE514927A (https=)

Family

ID=20307566

Family Applications (1)

Application Number Title Priority Date Filing Date
BE514927D BE514927A (https=) 1952-01-22

Country Status (4)

Country Link
BE (1) BE514927A (https=)
CH (1) CH307775A (https=)
FR (1) FR1064045A (https=)
GB (1) GB732797A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850414A (en) * 1955-06-20 1958-09-02 Enomoto Masamichi Method of making single crystal semiconductor elements
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1227433B (de) * 1955-07-28 1966-10-27 Siemens Ag Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten
DE1058634B (de) * 1956-06-07 1959-06-04 Ibm Deutschland Gasdiffusionsverfahren zur Herstellung eines Transistors
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum
DE1071177B (https=) * 1958-01-17
US3034924A (en) * 1958-10-30 1962-05-15 Balzers Patent Beteilig Ag Use of a rare earth metal in vaporizing metals and metal oxides
US3036933A (en) * 1959-10-06 1962-05-29 Ibm Vacuum evaporation method
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
US3172778A (en) * 1961-01-03 1965-03-09 Method for producing thin semi- conducting layers of semicon- ductor compounds
NL275889A (https=) * 1961-03-14
NL291466A (https=) * 1962-04-13
DE1237076B (de) * 1962-06-19 1967-03-23 Western Electric Co Verfahren zum Herstellen eines epitaxial aufgewachsenen Siliciumfilms auf einer Halbleiterunterlage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850414A (en) * 1955-06-20 1958-09-02 Enomoto Masamichi Method of making single crystal semiconductor elements
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture

Also Published As

Publication number Publication date
FR1064045A (fr) 1954-05-10
CH307775A (de) 1955-06-15
GB732797A (en) 1955-06-29

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