BE506110A - - Google Patents

Info

Publication number
BE506110A
BE506110A BE506110DA BE506110A BE 506110 A BE506110 A BE 506110A BE 506110D A BE506110D A BE 506110DA BE 506110 A BE506110 A BE 506110A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE506110A publication Critical patent/BE506110A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • H10P10/00
    • H10P32/00
    • H10P32/16
    • H10P95/00
    • H10P95/50
    • H10W40/47
    • H10W40/60
    • H10W90/00
    • H10W72/536
    • H10W72/884
BE506110D 1950-09-29 BE506110A (enExample)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US18749050A 1950-09-29 1950-09-29
US18747850A 1950-09-29 1950-09-29
US748845XA 1952-10-25 1952-10-25
US596943A US2994018A (en) 1950-09-29 1956-07-10 Asymmetrically conductive device and method of making the same

Publications (1)

Publication Number Publication Date
BE506110A true BE506110A (enExample)

Family

ID=27491158

Family Applications (2)

Application Number Title Priority Date Filing Date
BE506110D BE506110A (enExample) 1950-09-29
BE523775D BE523775A (enExample) 1950-09-29

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE523775D BE523775A (enExample) 1950-09-29

Country Status (6)

Country Link
US (1) US2994018A (enExample)
BE (2) BE523775A (enExample)
DE (2) DE976348C (enExample)
FR (4) FR1048471A (enExample)
GB (3) GB728129A (enExample)
NL (1) NL87573C (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
US2835613A (en) * 1955-09-13 1958-05-20 Philips Corp Method of surface-treating semi-conductors
US2894862A (en) * 1952-06-02 1959-07-14 Rca Corp Method of fabricating p-n type junction devices
DE1228002B (de) * 1961-03-07 1966-11-03 Gerhard Gille Dr Ing Trockengleichrichter

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977264C (de) * 1953-03-25 1965-08-12 Siemens Ag Spannungsabhaengiger Halbleiterkondensator
NL91651C (enExample) * 1953-12-09
US2928761A (en) * 1954-07-01 1960-03-15 Siemens Ag Methods of producing junction-type semi-conductor devices
NL199836A (enExample) * 1954-08-23 1900-01-01
DE977180C (de) * 1955-03-05 1965-06-24 Siemens Ag Verfahren zum elektrolytischen oertlich begrenzten Abtragen wie Bohren und Zerteilen halbleitenden kristallinen Materials
US2762001A (en) * 1955-03-23 1956-09-04 Globe Union Inc Fused junction transistor assemblies
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
DE1208412B (de) * 1959-11-13 1966-01-05 Siemens Ag Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements
US3165429A (en) * 1962-01-31 1965-01-12 Westinghouse Electric Corp Method of making a diffused base transistor
DE1639568B1 (de) * 1963-12-07 1969-10-23 Siemens Ag Verfahren zum Herstellen einer Schaltdiode mit einem Halbleiterkoerper mit vier Zonen von abwechselnd unterschiedlichem Leitungstyp
GB1037199A (en) * 1964-07-14 1966-07-27 Standard Telephones Cables Ltd Improvements in or relating to transistor manufacture
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
FR2543835B1 (fr) * 1979-03-21 1988-11-25 Minnesota Mining & Mfg Electrode biomedicale

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1994632A (en) * 1933-05-11 1935-03-19 Bell Telephone Labor Inc Asymmetric conductor
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
US2505633A (en) * 1946-03-18 1950-04-25 Purdue Research Foundation Alloys of germanium and method of making same
BE489418A (enExample) * 1948-06-26
US2502488A (en) * 1948-09-24 1950-04-04 Bell Telephone Labor Inc Semiconductor amplifier
NL149164B (nl) * 1948-12-29 Made Labor Sa Werkwijze ter bereiding van een zout van 5-hydroxytryptofan.
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
DE840418C (de) * 1949-05-30 1952-06-05 Licentia Gmbh Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
DE826175C (de) * 1949-08-11 1951-12-27 Siemens Ag Verfahren zur Herstellung von Trockengleichrichtern, insbesondere Selengleichrichtern
NL82014C (enExample) * 1949-11-30
US2750544A (en) * 1950-01-11 1956-06-12 Bell Telephone Labor Inc Silicon translating devices and methods of manufacture
US2792538A (en) * 1950-09-14 1957-05-14 Bell Telephone Labor Inc Semiconductor translating devices with embedded electrode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2894862A (en) * 1952-06-02 1959-07-14 Rca Corp Method of fabricating p-n type junction devices
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
US2835613A (en) * 1955-09-13 1958-05-20 Philips Corp Method of surface-treating semi-conductors
DE1228002B (de) * 1961-03-07 1966-11-03 Gerhard Gille Dr Ing Trockengleichrichter

Also Published As

Publication number Publication date
FR65476E (fr) 1956-02-21
BE523775A (enExample)
GB748845A (en) 1956-05-09
DE976348C (de) 1963-07-18
FR1192936A (fr) 1959-10-29
GB727900A (en) 1955-04-13
DE976360C (de) 1963-08-01
FR1048471A (fr) 1953-12-22
US2994018A (en) 1961-07-25
GB728129A (en) 1955-04-13
NL87573C (enExample) 1957-10-15
FR65388E (fr) 1956-02-09

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