BE500302A - - Google Patents

Info

Publication number
BE500302A
BE500302A BE500302DA BE500302A BE 500302 A BE500302 A BE 500302A BE 500302D A BE500302D A BE 500302DA BE 500302 A BE500302 A BE 500302A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE500302A publication Critical patent/BE500302A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE500302D 1949-11-30 BE500302A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US130268A US2597028A (en) 1949-11-30 1949-11-30 Semiconductor signal translating device
US136038A US2701326A (en) 1949-11-30 1949-12-30 Semiconductor translating device

Publications (1)

Publication Number Publication Date
BE500302A true BE500302A (ja)

Family

ID=26828304

Family Applications (1)

Application Number Title Priority Date Filing Date
BE500302D BE500302A (ja) 1949-11-30

Country Status (7)

Country Link
US (2) US2597028A (ja)
BE (1) BE500302A (ja)
CH (1) CH293271A (ja)
DE (1) DE961469C (ja)
FR (2) FR1024032A (ja)
GB (2) GB721671A (ja)
NL (1) NL82014C (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1007438B (de) * 1952-06-13 1957-05-02 Rca Corp Flaechentransistor nach dem Legierungsprinzip
DE1212640B (de) * 1952-10-24 1966-03-17 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einem durch Waermebehandeln zusammengefuegten Halbleiterkoerper
DE1291835B (de) * 1952-06-14 1969-04-03 Gen Electric Flaechentransistor
DE1289191B (ja) * 1964-09-28 1975-02-06

Families Citing this family (158)

* Cited by examiner, † Cited by third party
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US2841510A (en) * 1958-07-01 Method of producing p-n junctions in
US2869001A (en) * 1959-01-13 Welker
US2770762A (en) * 1949-04-01 1956-11-13 Int Standard Electric Corp Crystal triodes
NL160163B (nl) * 1950-03-31 Staley Mfg Co A E Werkwijze voor het vervaardigen van tabletten.
NL91400C (ja) * 1950-06-28
US2792538A (en) * 1950-09-14 1957-05-14 Bell Telephone Labor Inc Semiconductor translating devices with embedded electrode
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US2791524A (en) * 1953-04-03 1957-05-07 Gen Electric Fabrication method for p-n junctions
GB688866A (en) * 1950-10-19 1953-03-18 Gen Electric Co Ltd Improvements in or relating to crystal rectifiers
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US2771382A (en) * 1951-12-12 1956-11-20 Bell Telephone Labor Inc Method of fabricating semiconductors for signal translating devices
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DE976709C (de) * 1952-02-24 1964-03-12 Siemens Ag Verfahren zur Herstellung eines Halbleiterkristalls mit Zonen verschiedenen Leitungstyps bei A-B-Verbindungen
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US2743201A (en) * 1952-04-29 1956-04-24 Hughes Aircraft Co Monatomic semiconductor devices
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US2953730A (en) * 1952-11-07 1960-09-20 Rca Corp High frequency semiconductor devices
US2836522A (en) * 1952-11-15 1958-05-27 Rca Corp Junction type semiconductor device and method of its manufacture
US2784121A (en) * 1952-11-20 1957-03-05 Bell Telephone Labor Inc Method of fabricating semiconductor bodies for translating devices
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
BE525386A (ja) * 1952-12-29
US3162556A (en) * 1953-01-07 1964-12-22 Hupp Corp Introduction of disturbance points in a cadmium sulfide transistor
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US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2974236A (en) * 1953-03-11 1961-03-07 Rca Corp Multi-electrode semiconductor devices
US2801347A (en) * 1953-03-17 1957-07-30 Rca Corp Multi-electrode semiconductor devices
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
US3066249A (en) * 1953-04-07 1962-11-27 Sylvania Electric Prod Junction type semiconductor triode
US2822307A (en) * 1953-04-24 1958-02-04 Sylvania Electric Prod Technique for multiple p-n junctions
US2867732A (en) * 1953-05-14 1959-01-06 Ibm Current multiplication transistors and method of producing same
US2862787A (en) * 1953-05-27 1958-12-02 Paul F Seguin Process and apparatus for the preparation of semi-conductors from arsenides and phosphides and detectors formed therefrom
BE529698A (ja) * 1953-06-19
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
US2976426A (en) * 1953-08-03 1961-03-21 Rca Corp Self-powered semiconductive device
US2836520A (en) * 1953-08-17 1958-05-27 Westinghouse Electric Corp Method of making junction transistors
US2759855A (en) * 1953-08-24 1956-08-21 Eagle Picher Co Coated electronic device and method of making same
BE531626A (ja) * 1953-09-04
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
US3089219A (en) * 1953-10-19 1963-05-14 Raytheon Co Transistor assembly and method
US2823149A (en) * 1953-10-27 1958-02-11 Sprague Electric Co Process of forming barrier layers in crystalline bodies
US2844737A (en) * 1953-10-30 1958-07-22 Rca Corp Semi-conductive materials
US2803569A (en) * 1953-12-03 1957-08-20 Jacobs Harold Formation of junctions in semiconductors
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US2860218A (en) * 1954-02-04 1958-11-11 Gen Electric Germanium current controlling devices
US3010857A (en) * 1954-03-01 1961-11-28 Rca Corp Semi-conductor devices and methods of making same
BE536185A (ja) * 1954-03-05 1900-01-01
NL193073A (ja) * 1954-03-05
US2788299A (en) * 1954-03-10 1957-04-09 Sylvania Electric Prod Method of forming junction transistors
US2788300A (en) * 1954-03-10 1957-04-09 Sylvania Electric Prod Processing of alloy junction devices
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
NL94819C (ja) * 1954-04-01
NL111118C (ja) * 1954-04-01
US2976433A (en) * 1954-05-26 1961-03-21 Rca Corp Radioactive battery employing semiconductors
US2845373A (en) * 1954-06-01 1958-07-29 Rca Corp Semi-conductor devices and methods of making same
US2936256A (en) * 1954-06-01 1960-05-10 Gen Electric Semiconductor devices
US2842466A (en) * 1954-06-15 1958-07-08 Gen Electric Method of making p-nu junction semiconductor unit
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US2832898A (en) * 1954-07-12 1958-04-29 Rca Corp Time delay transistor trigger circuit
BE539938A (ja) * 1954-07-21
US2850412A (en) * 1954-08-13 1958-09-02 Sylvania Electric Prod Process for producing germaniumindium alloyed junctions
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US2992337A (en) * 1955-05-20 1961-07-11 Ibm Multiple collector transistors and circuits therefor
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
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US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
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US2984890A (en) * 1956-12-24 1961-05-23 Gahagan Inc Crystal diode rectifier and method of making same
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US2953529A (en) * 1957-04-01 1960-09-20 Rca Corp Semiconductive radiation-sensitive device
US2989385A (en) * 1957-05-14 1961-06-20 Bell Telephone Labor Inc Process for ion bombarding and etching metal
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1007438B (de) * 1952-06-13 1957-05-02 Rca Corp Flaechentransistor nach dem Legierungsprinzip
DE1291835B (de) * 1952-06-14 1969-04-03 Gen Electric Flaechentransistor
DE1212640B (de) * 1952-10-24 1966-03-17 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einem durch Waermebehandeln zusammengefuegten Halbleiterkoerper
DE1289191B (ja) * 1964-09-28 1975-02-06

Also Published As

Publication number Publication date
DE961469C (de) 1957-05-16
NL82014C (ja)
US2597028A (en) 1952-05-20
GB721671A (en) 1955-01-12
FR1029640A (fr) 1953-06-04
CH293271A (de) 1953-09-15
US2701326A (en) 1955-02-01
GB721740A (en) 1955-01-12
FR1024032A (fr) 1953-03-26

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