AU743188B2 - Non-destructive analysis of a semiconductor using reflectance spectrometry - Google Patents

Non-destructive analysis of a semiconductor using reflectance spectrometry Download PDF

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Publication number
AU743188B2
AU743188B2 AU35718/99A AU3571899A AU743188B2 AU 743188 B2 AU743188 B2 AU 743188B2 AU 35718/99 A AU35718/99 A AU 35718/99A AU 3571899 A AU3571899 A AU 3571899A AU 743188 B2 AU743188 B2 AU 743188B2
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AU
Australia
Prior art keywords
cos
reflectance
calculating
model
radiation
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AU35718/99A
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English (en)
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AU3571899A (en
Inventor
Alexander P. Cherkassky
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ALEXANDER P CHERKASSKY
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ALEXANDER P CHERKASSKY
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Application filed by ALEXANDER P CHERKASSKY filed Critical ALEXANDER P CHERKASSKY
Publication of AU3571899A publication Critical patent/AU3571899A/en
Application granted granted Critical
Publication of AU743188B2 publication Critical patent/AU743188B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU35718/99A 1998-04-21 1999-04-20 Non-destructive analysis of a semiconductor using reflectance spectrometry Ceased AU743188B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8263998P 1998-04-21 1998-04-21
US60/082639 1998-04-21
US09/294247 1999-04-19
US09/294,247 US6242739B1 (en) 1998-04-21 1999-04-19 Method and apparatus for non-destructive determination of film thickness and dopant concentration using fourier transform infrared spectrometry
PCT/US1999/008721 WO1999054679A1 (en) 1998-04-21 1999-04-20 Non-destructive analysis of a semiconductor using reflectance spectrometry

Publications (2)

Publication Number Publication Date
AU3571899A AU3571899A (en) 1999-11-08
AU743188B2 true AU743188B2 (en) 2002-01-17

Family

ID=26767688

Family Applications (1)

Application Number Title Priority Date Filing Date
AU35718/99A Ceased AU743188B2 (en) 1998-04-21 1999-04-20 Non-destructive analysis of a semiconductor using reflectance spectrometry

Country Status (7)

Country Link
US (1) US6242739B1 (https=)
EP (1) EP1078217B1 (https=)
JP (1) JP2002512441A (https=)
AU (1) AU743188B2 (https=)
CA (1) CA2328624A1 (https=)
DE (1) DE69917899T2 (https=)
WO (1) WO1999054679A1 (https=)

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US7869057B2 (en) * 2002-09-09 2011-01-11 Zygo Corporation Multiple-angle multiple-wavelength interferometer using high-NA imaging and spectral analysis
US7139081B2 (en) * 2002-09-09 2006-11-21 Zygo Corporation Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures
US6623995B1 (en) * 2002-10-30 2003-09-23 Taiwan Semiconductor Manufacturing Company Optimized monitor method for a metal patterning process
US7006222B2 (en) * 2003-01-08 2006-02-28 Kla-Tencor Technologies Corporation Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI)
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WO2004079294A2 (en) * 2003-03-06 2004-09-16 Zygo Corporation Characterizing and profiling complex surface structures using scanning interferometry
WO2004079295A2 (en) * 2003-03-06 2004-09-16 Zygo Corporation Profiling complex surface structures using scanning interferometry
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US7271918B2 (en) * 2003-03-06 2007-09-18 Zygo Corporation Profiling complex surface structures using scanning interferometry
WO2005029193A2 (en) 2003-09-15 2005-03-31 Zygo Corporation Interferometric analysis of surfaces.
TWI335417B (en) * 2003-10-27 2011-01-01 Zygo Corp Method and apparatus for thin film measurement
US20060012582A1 (en) * 2004-07-15 2006-01-19 De Lega Xavier C Transparent film measurements
US7884947B2 (en) * 2005-01-20 2011-02-08 Zygo Corporation Interferometry for determining characteristics of an object surface, with spatially coherent illumination
EP1853874B1 (en) * 2005-01-20 2009-09-02 Zygo Corporation Interferometer for determining characteristics of an object surface
US7179665B1 (en) 2005-02-17 2007-02-20 Midwest Research Institute Optical method for determining the doping depth profile in silicon
TWI394930B (zh) * 2005-05-19 2013-05-01 Zygo Corp 取得薄膜結構資訊之低同調干涉信號的分析方法及裝置
US20060266743A1 (en) * 2005-05-30 2006-11-30 National Chiao Tung University Laser-ablated fiber devices and method of manufacturing the same
US7636168B2 (en) * 2005-10-11 2009-12-22 Zygo Corporation Interferometry method and system including spectral decomposition
US7469164B2 (en) * 2006-06-26 2008-12-23 Nanometrics Incorporated Method and apparatus for process control with in-die metrology
WO2008011510A2 (en) * 2006-07-21 2008-01-24 Zygo Corporation Compensation of systematic effects in low coherence interferometry
US7924435B2 (en) * 2006-12-22 2011-04-12 Zygo Corporation Apparatus and method for measuring characteristics of surface features
US7889355B2 (en) * 2007-01-31 2011-02-15 Zygo Corporation Interferometry for lateral metrology
US7619746B2 (en) * 2007-07-19 2009-11-17 Zygo Corporation Generating model signals for interferometry
DE102007034289B3 (de) * 2007-07-20 2009-01-29 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur in-situ-Bestimmung der stofflichen Zusammensetzung von optisch dünnen Schichten, Anordnungen zur Durchführung und Anwendungen des Verfahrens
US8072611B2 (en) * 2007-10-12 2011-12-06 Zygo Corporation Interferometric analysis of under-resolved features
KR101274517B1 (ko) * 2007-11-13 2013-06-13 지고 코포레이션 편광 스캐닝을 이용한 간섭계
JP5290322B2 (ja) 2007-12-14 2013-09-18 ザイゴ コーポレーション 走査干渉法を使用した表面構造の解析
US8120781B2 (en) 2008-11-26 2012-02-21 Zygo Corporation Interferometric systems and methods featuring spectral analysis of unevenly sampled data
US8115932B2 (en) * 2009-05-28 2012-02-14 Corning Incorporated Methods and apparatus for measuring ion implant dose
KR101939406B1 (ko) * 2010-05-03 2019-01-16 오로라 솔라 테크놀로지스 (캐나다) 인크. 반도체 층의 도펀트 함유량의 비접촉 측정
US8804106B2 (en) * 2011-06-29 2014-08-12 Kla-Tencor Corporation System and method for nondestructively measuring concentration and thickness of doped semiconductor layers
US9400172B2 (en) * 2011-10-26 2016-07-26 Mitsubishi Electric Corporation Film thickness measurement method
US9140542B2 (en) 2012-02-08 2015-09-22 Honeywell Asca Inc. Caliper coating measurement on continuous non-uniform web using THz sensor
US10215696B2 (en) * 2013-11-15 2019-02-26 Picometrix, Llc System for determining at least one property of a sheet dielectric sample using terahertz radiation
US10156476B2 (en) * 2014-11-13 2018-12-18 Bae Systems Information And Electronic Systems Integration Inc. Solid state wideband fourier transform infrared spectrometer
KR20220128342A (ko) * 2019-12-05 2022-09-20 오로라 솔라 테크놀로지스 (캐나다) 인크. 반도체 물질의 특성화 시스템 및 방법
US20250349623A1 (en) * 2024-05-09 2025-11-13 Kla Corporation Measurement Condition Dependent, Multi-Dimensional Model Of Optical Dispersion Of Semiconductor Structures
CN121675075B (zh) * 2026-02-06 2026-04-10 上海车仪田科技有限公司 半导体工艺参数的调整方法、系统、设备及存储介质

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US5386118A (en) * 1992-05-11 1995-01-31 Shin-Etsu Handotai Co., Ltd. Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal

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Patent Citations (3)

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US4555767A (en) * 1982-05-27 1985-11-26 International Business Machines Corporation Method and apparatus for measuring thickness of epitaxial layer by infrared reflectance
US4625114A (en) * 1985-07-15 1986-11-25 At&T Technologies, Inc. Method and apparatus for nondestructively determining the characteristics of a multilayer thin film structure
US5386118A (en) * 1992-05-11 1995-01-31 Shin-Etsu Handotai Co., Ltd. Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal

Also Published As

Publication number Publication date
EP1078217A1 (en) 2001-02-28
US6242739B1 (en) 2001-06-05
DE69917899T2 (de) 2005-08-25
CA2328624A1 (en) 1999-10-28
AU3571899A (en) 1999-11-08
WO1999054679A1 (en) 1999-10-28
DE69917899D1 (de) 2004-07-15
EP1078217B1 (en) 2004-06-09
EP1078217A4 (en) 2001-07-25
JP2002512441A (ja) 2002-04-23

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