AU743188B2 - Non-destructive analysis of a semiconductor using reflectance spectrometry - Google Patents

Non-destructive analysis of a semiconductor using reflectance spectrometry Download PDF

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Publication number
AU743188B2
AU743188B2 AU35718/99A AU3571899A AU743188B2 AU 743188 B2 AU743188 B2 AU 743188B2 AU 35718/99 A AU35718/99 A AU 35718/99A AU 3571899 A AU3571899 A AU 3571899A AU 743188 B2 AU743188 B2 AU 743188B2
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AU
Australia
Prior art keywords
cos
reflectance
calculating
model
radiation
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Ceased
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AU35718/99A
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English (en)
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AU3571899A (en
Inventor
Alexander P. Cherkassky
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ALEXANDER P CHERKASSKY
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ALEXANDER P CHERKASSKY
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Application filed by ALEXANDER P CHERKASSKY filed Critical ALEXANDER P CHERKASSKY
Publication of AU3571899A publication Critical patent/AU3571899A/en
Application granted granted Critical
Publication of AU743188B2 publication Critical patent/AU743188B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU35718/99A 1998-04-21 1999-04-20 Non-destructive analysis of a semiconductor using reflectance spectrometry Ceased AU743188B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8263998P 1998-04-21 1998-04-21
US60/082639 1998-04-21
US09/294,247 US6242739B1 (en) 1998-04-21 1999-04-19 Method and apparatus for non-destructive determination of film thickness and dopant concentration using fourier transform infrared spectrometry
US09/294247 1999-04-19
PCT/US1999/008721 WO1999054679A1 (en) 1998-04-21 1999-04-20 Non-destructive analysis of a semiconductor using reflectance spectrometry

Publications (2)

Publication Number Publication Date
AU3571899A AU3571899A (en) 1999-11-08
AU743188B2 true AU743188B2 (en) 2002-01-17

Family

ID=26767688

Family Applications (1)

Application Number Title Priority Date Filing Date
AU35718/99A Ceased AU743188B2 (en) 1998-04-21 1999-04-20 Non-destructive analysis of a semiconductor using reflectance spectrometry

Country Status (7)

Country Link
US (1) US6242739B1 (enExample)
EP (1) EP1078217B1 (enExample)
JP (1) JP2002512441A (enExample)
AU (1) AU743188B2 (enExample)
CA (1) CA2328624A1 (enExample)
DE (1) DE69917899T2 (enExample)
WO (1) WO1999054679A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL132639A (en) * 1999-10-28 2003-11-23 Nova Measuring Instr Ltd Optical measurements of patterned structures
AU2001279247A1 (en) * 2000-08-10 2002-02-25 Sensys Instruments Corporation Database interpolation method for optical measurement of diffractive microstructures
US6947135B2 (en) * 2002-07-01 2005-09-20 Therma-Wave, Inc. Reduced multicubic database interpolation method for optical measurement of diffractive microstructures
US7869057B2 (en) * 2002-09-09 2011-01-11 Zygo Corporation Multiple-angle multiple-wavelength interferometer using high-NA imaging and spectral analysis
US7139081B2 (en) * 2002-09-09 2006-11-21 Zygo Corporation Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures
US6623995B1 (en) * 2002-10-30 2003-09-23 Taiwan Semiconductor Manufacturing Company Optimized monitor method for a metal patterning process
US7006222B2 (en) * 2003-01-08 2006-02-28 Kla-Tencor Technologies Corporation Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI)
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US7106454B2 (en) * 2003-03-06 2006-09-12 Zygo Corporation Profiling complex surface structures using scanning interferometry
KR101169293B1 (ko) 2003-03-06 2012-07-30 지고 코포레이션 주사 간섭측정을 이용한 복합 표면 구조의 프로파일링
US7271918B2 (en) * 2003-03-06 2007-09-18 Zygo Corporation Profiling complex surface structures using scanning interferometry
EP1604168B1 (en) * 2003-03-06 2011-07-27 Zygo Corporation Profiling complex surface structures using scanning interferometry
US7292346B2 (en) 2003-09-15 2007-11-06 Zygo Corporation Triangulation methods and systems for profiling surfaces through a thin film coating
TWI335417B (en) * 2003-10-27 2011-01-01 Zygo Corp Method and apparatus for thin film measurement
US20060012582A1 (en) * 2004-07-15 2006-01-19 De Lega Xavier C Transparent film measurements
US7446882B2 (en) * 2005-01-20 2008-11-04 Zygo Corporation Interferometer for determining characteristics of an object surface
US7884947B2 (en) * 2005-01-20 2011-02-08 Zygo Corporation Interferometry for determining characteristics of an object surface, with spatially coherent illumination
US7179665B1 (en) 2005-02-17 2007-02-20 Midwest Research Institute Optical method for determining the doping depth profile in silicon
EP1883781B1 (en) * 2005-05-19 2019-08-07 Zygo Corporation Analyzing low-coherence interferometry signals for thin film structures
US20060266743A1 (en) * 2005-05-30 2006-11-30 National Chiao Tung University Laser-ablated fiber devices and method of manufacturing the same
WO2007044786A2 (en) * 2005-10-11 2007-04-19 Zygo Corporation Interferometry method and system including spectral decomposition
US7469164B2 (en) * 2006-06-26 2008-12-23 Nanometrics Incorporated Method and apparatus for process control with in-die metrology
US7522288B2 (en) * 2006-07-21 2009-04-21 Zygo Corporation Compensation of systematic effects in low coherence interferometry
WO2008080127A2 (en) * 2006-12-22 2008-07-03 Zygo Corporation Apparatus and method for measuring characteristics of surface features
US7889355B2 (en) * 2007-01-31 2011-02-15 Zygo Corporation Interferometry for lateral metrology
US7619746B2 (en) * 2007-07-19 2009-11-17 Zygo Corporation Generating model signals for interferometry
DE102007034289B3 (de) 2007-07-20 2009-01-29 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur in-situ-Bestimmung der stofflichen Zusammensetzung von optisch dünnen Schichten, Anordnungen zur Durchführung und Anwendungen des Verfahrens
US8072611B2 (en) * 2007-10-12 2011-12-06 Zygo Corporation Interferometric analysis of under-resolved features
WO2009064670A2 (en) * 2007-11-13 2009-05-22 Zygo Corporation Interferometer utilizing polarization scanning
EP2232195B1 (en) 2007-12-14 2015-03-18 Zygo Corporation Analyzing surface structure using scanning interferometry
US8004688B2 (en) 2008-11-26 2011-08-23 Zygo Corporation Scan error correction in low coherence scanning interferometry
US8115932B2 (en) * 2009-05-28 2012-02-14 Corning Incorporated Methods and apparatus for measuring ion implant dose
US8829442B2 (en) 2010-05-03 2014-09-09 Aurora Control Technologies Inc. Non-contact measurement of the dopant content of semiconductor layers
US8804106B2 (en) * 2011-06-29 2014-08-12 Kla-Tencor Corporation System and method for nondestructively measuring concentration and thickness of doped semiconductor layers
WO2013061417A1 (ja) * 2011-10-26 2013-05-02 三菱電機株式会社 膜厚測定方法
US9140542B2 (en) 2012-02-08 2015-09-22 Honeywell Asca Inc. Caliper coating measurement on continuous non-uniform web using THz sensor
US10215696B2 (en) * 2013-11-15 2019-02-26 Picometrix, Llc System for determining at least one property of a sheet dielectric sample using terahertz radiation
US10156476B2 (en) * 2014-11-13 2018-12-18 Bae Systems Information And Electronic Systems Integration Inc. Solid state wideband fourier transform infrared spectrometer
KR20220128342A (ko) * 2019-12-05 2022-09-20 오로라 솔라 테크놀로지스 (캐나다) 인크. 반도체 물질의 특성화 시스템 및 방법
US20250349623A1 (en) * 2024-05-09 2025-11-13 Kla Corporation Measurement Condition Dependent, Multi-Dimensional Model Of Optical Dispersion Of Semiconductor Structures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4555767A (en) * 1982-05-27 1985-11-26 International Business Machines Corporation Method and apparatus for measuring thickness of epitaxial layer by infrared reflectance
US4625114A (en) * 1985-07-15 1986-11-25 At&T Technologies, Inc. Method and apparatus for nondestructively determining the characteristics of a multilayer thin film structure
US5386118A (en) * 1992-05-11 1995-01-31 Shin-Etsu Handotai Co., Ltd. Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091320A (en) * 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5354575A (en) * 1993-04-16 1994-10-11 University Of Maryland Ellipsometric approach to anti-reflection coatings of semiconductor laser amplifiers
US5408322A (en) * 1993-04-26 1995-04-18 Materials Research Corporation Self aligning in-situ ellipsometer and method of using for process monitoring
US5604581A (en) 1994-10-07 1997-02-18 On-Line Technologies, Inc. Film thickness and free carrier concentration analysis method and apparatus
EP0737856B1 (en) * 1995-04-14 2010-04-28 J.A. Woollam Co. Inc. A method of investigating samples by changing polarisation
US5900633A (en) * 1997-12-15 1999-05-04 On-Line Technologies, Inc Spectrometric method for analysis of film thickness and composition on a patterned sample

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4555767A (en) * 1982-05-27 1985-11-26 International Business Machines Corporation Method and apparatus for measuring thickness of epitaxial layer by infrared reflectance
US4625114A (en) * 1985-07-15 1986-11-25 At&T Technologies, Inc. Method and apparatus for nondestructively determining the characteristics of a multilayer thin film structure
US5386118A (en) * 1992-05-11 1995-01-31 Shin-Etsu Handotai Co., Ltd. Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal

Also Published As

Publication number Publication date
DE69917899T2 (de) 2005-08-25
EP1078217A1 (en) 2001-02-28
AU3571899A (en) 1999-11-08
WO1999054679A1 (en) 1999-10-28
CA2328624A1 (en) 1999-10-28
JP2002512441A (ja) 2002-04-23
EP1078217B1 (en) 2004-06-09
EP1078217A4 (en) 2001-07-25
US6242739B1 (en) 2001-06-05
DE69917899D1 (de) 2004-07-15

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