AU658561B2 - Semiconductor sensor - Google Patents

Semiconductor sensor

Info

Publication number
AU658561B2
AU658561B2 AU66171/90A AU6617190A AU658561B2 AU 658561 B2 AU658561 B2 AU 658561B2 AU 66171/90 A AU66171/90 A AU 66171/90A AU 6617190 A AU6617190 A AU 6617190A AU 658561 B2 AU658561 B2 AU 658561B2
Authority
AU
Australia
Prior art keywords
channel
semiconductor sensor
cmos
sensor
sensitivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU66171/90A
Other versions
AU6617190A (en
Inventor
Vincent Mosser
Ian Suski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schlumberger SA
Original Assignee
Schlumberger SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger SA filed Critical Schlumberger SA
Publication of AU6617190A publication Critical patent/AU6617190A/en
Application granted granted Critical
Publication of AU658561B2 publication Critical patent/AU658561B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Pressure Sensors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Debugging And Monitoring (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Surgical Instruments (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Emergency Alarm Devices (AREA)
  • Fire-Detection Mechanisms (AREA)

Abstract

The invention relates to field effect semiconductors sensors. The sensor according to the invention is comprised of a ring oscillator (3) consisting of an odd number of CMOS reversers and arranged in an area (2) which is sensitive to the physical magnitude to be measured. In order to increase the sensitivity of the sensor, for each CMOS reverser, the channel $i(n) of the NMOS transistor is arranged perpendicularly to the channel $i(p) of the PMOS transistor.
AU66171/90A 1989-10-13 1990-10-15 Semiconductor sensor Ceased AU658561B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR8913383 1989-10-13
FR898913383A FR2653271B1 (en) 1989-10-13 1989-10-13 SEMICONDUCTOR SENSOR.
PCT/FR1990/000736 WO1991006125A1 (en) 1989-10-13 1990-10-15 Semiconductor sensor

Publications (2)

Publication Number Publication Date
AU6617190A AU6617190A (en) 1991-05-16
AU658561B2 true AU658561B2 (en) 1995-04-27

Family

ID=9386356

Family Applications (1)

Application Number Title Priority Date Filing Date
AU66171/90A Ceased AU658561B2 (en) 1989-10-13 1990-10-15 Semiconductor sensor

Country Status (14)

Country Link
EP (1) EP0495899B1 (en)
KR (1) KR100200938B1 (en)
AT (1) ATE115771T1 (en)
AU (1) AU658561B2 (en)
BR (1) BR9007733A (en)
CA (1) CA2067180C (en)
DE (1) DE69015204T2 (en)
DK (1) DK0495899T3 (en)
ES (1) ES2065552T3 (en)
FR (1) FR2653271B1 (en)
HU (1) HUT62115A (en)
NO (1) NO921453L (en)
RU (1) RU2075796C1 (en)
WO (1) WO1991006125A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101268348A (en) * 2005-07-22 2008-09-17 意法半导体股份有限公司 Integrated pressure sensor with high full-scale value
WO2007032032A1 (en) * 2005-09-16 2007-03-22 Stmicroelectronics S.R.L. Pressure sensor having a high full-scale value with package thereof
RU2451270C1 (en) * 2011-04-05 2012-05-20 Валерий Анатольевич Васильев Semiconductor high-precision absolute pressure sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492861A (en) * 1967-03-15 1970-02-03 Csf Strain gauge arrangement
US3761784A (en) * 1971-06-29 1973-09-25 Sescosem Soc Europ Semiconduct Semi-conductor strain gauge device with field effect transistor symmetrical pairs
EP0040795B1 (en) * 1980-05-22 1987-04-08 Siemens Aktiengesellschaft Semiconductor sensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD133714A1 (en) * 1977-12-29 1979-01-17 Frank Loeffler SILICON BENDING PLATE WITH INTEGRATED PIEZORESISTIVAL SEMICONDUCTOR MEASURING ELEMENTS

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492861A (en) * 1967-03-15 1970-02-03 Csf Strain gauge arrangement
US3761784A (en) * 1971-06-29 1973-09-25 Sescosem Soc Europ Semiconduct Semi-conductor strain gauge device with field effect transistor symmetrical pairs
EP0040795B1 (en) * 1980-05-22 1987-04-08 Siemens Aktiengesellschaft Semiconductor sensor

Also Published As

Publication number Publication date
NO921453L (en) 1992-06-11
AU6617190A (en) 1991-05-16
DK0495899T3 (en) 1995-05-15
NO921453D0 (en) 1992-04-10
HUT62115A (en) 1993-03-29
RU2075796C1 (en) 1997-03-20
CA2067180C (en) 2001-04-10
EP0495899B1 (en) 1994-12-14
DE69015204D1 (en) 1995-01-26
EP0495899A1 (en) 1992-07-29
FR2653271B1 (en) 1994-06-10
WO1991006125A1 (en) 1991-05-02
KR100200938B1 (en) 1999-07-01
CA2067180A1 (en) 1991-04-14
BR9007733A (en) 1992-07-21
ATE115771T1 (en) 1994-12-15
ES2065552T3 (en) 1995-02-16
FR2653271A1 (en) 1991-04-19
DE69015204T2 (en) 1995-05-04

Similar Documents

Publication Publication Date Title
AU658561B2 (en) Semiconductor sensor
IT8619173A0 (en) PROCEDURE FOR THE MANUFACTURE OF INTEGRATED ELECTRONIC DEVICES, IN PARTICULAR HIGH VOLTAGE P-CHANNEL MOS TRANSISTORS.
EP0371657A3 (en) Thermal imaging device
JPS53141583A (en) Integrated-circuit semiconductor device of field effect type
DE68918203T2 (en) Bias generator for static CMOS circuits.
EP0261657A3 (en) Input circuit for an infrared imaging system
JPS53136489A (en) Mos semiconductor element of high dielectric strenght
JPS5433097A (en) Semiconductor gas sensor
DE69033265T2 (en) Integrated semiconductor circuit with P- and N-channel MOS transistors
JPS5214379A (en) Method for production of insulated gate semiconductor integrated circuit device
JPS5270884A (en) Moisture sensitive element
JPS56110334A (en) Input detection circuit
JPS53110462A (en) Semiconductor device of mis field effect type
JPS5380551A (en) Constant-voltage circuit
JPS5648531A (en) Semiconductor pressure sensor
JPS5389377A (en) Semiconductor device and its production
KR940017153A (en) Depletion transistor type delay circuit
JPS5276884A (en) Semiconductor integrated circuit
JPS53139989A (en) Pressure sensor
EP0880172A3 (en) Semiconductor integrated circuit
JPS51135328A (en) Temperature compensating circuit
JPS55146963A (en) Semiconductor integrated circuit
KANSY CCD processor for InSb array[Final Technical Report, 1 Jun. 1976- 31 Oct. 1978]
JPS5371586A (en) Semiconductor integrated circuit device
JPS5348443A (en) Transistor amplifier circuit

Legal Events

Date Code Title Description
MK14 Patent ceased section 143(a) (annual fees not paid) or expired