AU463838B2 - Method forthe manufacturing ofa zener diode - Google Patents

Method forthe manufacturing ofa zener diode

Info

Publication number
AU463838B2
AU463838B2 AU52003/73A AU5200373A AU463838B2 AU 463838 B2 AU463838 B2 AU 463838B2 AU 52003/73 A AU52003/73 A AU 52003/73A AU 5200373 A AU5200373 A AU 5200373A AU 463838 B2 AU463838 B2 AU 463838B2
Authority
AU
Australia
Prior art keywords
ofa
zener diode
method forthe
manufacturing
forthe manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU52003/73A
Other languages
English (en)
Other versions
AU5200373A (en
Inventor
GEISLER and STEFAN BERNHARDT ULRICH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ITT Inc
Original Assignee
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ITT Industries Inc filed Critical ITT Industries Inc
Publication of AU5200373A publication Critical patent/AU5200373A/en
Application granted granted Critical
Publication of AU463838B2 publication Critical patent/AU463838B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU52003/73A 1972-02-18 1973-02-08 Method forthe manufacturing ofa zener diode Expired AU463838B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2207654A DE2207654B2 (de) 1972-02-18 1972-02-18 Verfahren zum Herstellen einer Zenerdiode
DEDE82207654 1972-02-18

Publications (2)

Publication Number Publication Date
AU5200373A AU5200373A (en) 1974-08-08
AU463838B2 true AU463838B2 (en) 1975-08-07

Family

ID=5836353

Family Applications (1)

Application Number Title Priority Date Filing Date
AU52003/73A Expired AU463838B2 (en) 1972-02-18 1973-02-08 Method forthe manufacturing ofa zener diode

Country Status (5)

Country Link
AU (1) AU463838B2 (OSRAM)
DE (1) DE2207654B2 (OSRAM)
FR (1) FR2172191B1 (OSRAM)
GB (1) GB1364035A (OSRAM)
IT (1) IT979130B (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
NL7907680A (nl) * 1979-10-18 1981-04-22 Philips Nv Zenerdiode.
NL187942C (nl) * 1980-08-18 1992-02-17 Philips Nv Zenerdiode en werkwijze ter vervaardiging daarvan.
FR2500855A1 (fr) * 1981-02-27 1982-09-03 Thomson Csf Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
JP2001352079A (ja) * 2000-06-07 2001-12-21 Nec Corp ダイオードおよびその製造方法
CN113206157A (zh) * 2021-04-30 2021-08-03 中国振华集团永光电子有限公司（国营第八七三厂） 体内击穿玻钝二极管及制造方法
CN114551567A (zh) * 2022-01-21 2022-05-27 吉林华微电子股份有限公司 一种齐纳二极管及齐纳二极管制作方法

Also Published As

Publication number Publication date
FR2172191B1 (OSRAM) 1978-04-14
IT979130B (it) 1974-09-30
DE2207654B2 (de) 1974-02-14
GB1364035A (en) 1974-08-21
AU5200373A (en) 1974-08-08
DE2207654A1 (de) 1973-08-30
FR2172191A1 (OSRAM) 1973-09-28

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