AU446887B2 - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
AU446887B2
AU446887B2 AU36106/71A AU3610671A AU446887B2 AU 446887 B2 AU446887 B2 AU 446887B2 AU 36106/71 A AU36106/71 A AU 36106/71A AU 3610671 A AU3610671 A AU 3610671A AU 446887 B2 AU446887 B2 AU 446887B2
Authority
AU
Australia
Prior art keywords
field
semiconductor device
effect semiconductor
effect
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU36106/71A
Other languages
English (en)
Other versions
AU3610671A (en
Inventor
Yamashita Akio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10428570A external-priority patent/JPS527716B1/ja
Priority claimed from JP45106523A external-priority patent/JPS527717B1/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of AU3610671A publication Critical patent/AU3610671A/en
Application granted granted Critical
Publication of AU446887B2 publication Critical patent/AU446887B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
AU36106/71A 1970-11-26 1971-11-24 Field-effect semiconductor device Expired AU446887B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10428570A JPS527716B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-11-26 1970-11-26
JP45106523A JPS527717B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-11-30 1970-11-30

Publications (2)

Publication Number Publication Date
AU3610671A AU3610671A (en) 1973-05-31
AU446887B2 true AU446887B2 (en) 1974-04-04

Family

ID=26444792

Family Applications (1)

Application Number Title Priority Date Filing Date
AU36106/71A Expired AU446887B2 (en) 1970-11-26 1971-11-24 Field-effect semiconductor device

Country Status (7)

Country Link
US (1) US3742318A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU446887B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA938736A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2158270C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2115412B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1377996A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7116235A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US3916428A (en) * 1973-05-19 1975-10-28 Matsushita Electric Ind Co Ltd Semiconductor magneto-resistance element
JPS6036708B2 (ja) * 1978-02-24 1985-08-22 株式会社日立製作所 電界効果形サイリスタのゲ−ト回路
JPS5936832B2 (ja) * 1978-03-14 1984-09-06 株式会社日立製作所 半導体スイッチング素子
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
FR2774511B1 (fr) * 1998-01-30 2002-10-11 Commissariat Energie Atomique Substrat compliant en particulier pour un depot par hetero-epitaxie

Also Published As

Publication number Publication date
DE2158270A1 (de) 1972-06-29
AU3610671A (en) 1973-05-31
US3742318A (en) 1973-06-26
FR2115412A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-07-07
GB1377996A (en) 1974-12-18
FR2115412B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-09-03
CA938736A (en) 1973-12-18
DE2158270B2 (de) 1977-12-08
NL7116235A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-05-30
DE2158270C3 (de) 1978-08-03

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