FR2115412A1 - - Google Patents
Info
- Publication number
- FR2115412A1 FR2115412A1 FR7142324A FR7142324A FR2115412A1 FR 2115412 A1 FR2115412 A1 FR 2115412A1 FR 7142324 A FR7142324 A FR 7142324A FR 7142324 A FR7142324 A FR 7142324A FR 2115412 A1 FR2115412 A1 FR 2115412A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10428570A JPS527716B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-11-26 | 1970-11-26 | |
| JP45106523A JPS527717B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-11-30 | 1970-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2115412A1 true FR2115412A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-07-07 |
| FR2115412B1 FR2115412B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-09-03 |
Family
ID=26444792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7142324A Expired FR2115412B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-11-26 | 1971-11-25 |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2418569A1 (fr) * | 1978-02-24 | 1979-09-21 | Hitachi Ltd | Circuit de commande de gachette pour thyristor a effet de champ |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
| US3916428A (en) * | 1973-05-19 | 1975-10-28 | Matsushita Electric Ind Co Ltd | Semiconductor magneto-resistance element |
| JPS5936832B2 (ja) * | 1978-03-14 | 1984-09-06 | 株式会社日立製作所 | 半導体スイッチング素子 |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| FR2774511B1 (fr) * | 1998-01-30 | 2002-10-11 | Commissariat Energie Atomique | Substrat compliant en particulier pour un depot par hetero-epitaxie |
-
1971
- 1971-11-24 US US00201660A patent/US3742318A/en not_active Expired - Lifetime
- 1971-11-24 DE DE2158270A patent/DE2158270C3/de not_active Expired
- 1971-11-24 AU AU36106/71A patent/AU446887B2/en not_active Expired
- 1971-11-25 GB GB5481071A patent/GB1377996A/en not_active Expired
- 1971-11-25 CA CA128563A patent/CA938736A/en not_active Expired
- 1971-11-25 NL NL7116235A patent/NL7116235A/xx unknown
- 1971-11-25 FR FR7142324A patent/FR2115412B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2418569A1 (fr) * | 1978-02-24 | 1979-09-21 | Hitachi Ltd | Circuit de commande de gachette pour thyristor a effet de champ |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2158270A1 (de) | 1972-06-29 |
| AU3610671A (en) | 1973-05-31 |
| US3742318A (en) | 1973-06-26 |
| GB1377996A (en) | 1974-12-18 |
| FR2115412B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-09-03 |
| CA938736A (en) | 1973-12-18 |
| AU446887B2 (en) | 1974-04-04 |
| DE2158270B2 (de) | 1977-12-08 |
| NL7116235A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-05-30 |
| DE2158270C3 (de) | 1978-08-03 |