AU4431585A - Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source - Google Patents

Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source

Info

Publication number
AU4431585A
AU4431585A AU44315/85A AU4431585A AU4431585A AU 4431585 A AU4431585 A AU 4431585A AU 44315/85 A AU44315/85 A AU 44315/85A AU 4431585 A AU4431585 A AU 4431585A AU 4431585 A AU4431585 A AU 4431585A
Authority
AU
Australia
Prior art keywords
alkali
alkaline earth
earth metal
metal tetrafluoroborate
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU44315/85A
Other versions
AU578707B2 (en
Inventor
Andre Lagendijk
Shantia Riahi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of AU4431585A publication Critical patent/AU4431585A/en
Application granted granted Critical
Publication of AU578707B2 publication Critical patent/AU578707B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
AU44315/85A 1985-05-17 1985-05-17 Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source Ceased AU578707B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1985/000932 WO1986006875A1 (en) 1985-05-17 1985-05-17 Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source

Publications (2)

Publication Number Publication Date
AU4431585A true AU4431585A (en) 1986-12-04
AU578707B2 AU578707B2 (en) 1988-11-03

Family

ID=22188685

Family Applications (1)

Application Number Title Priority Date Filing Date
AU44315/85A Ceased AU578707B2 (en) 1985-05-17 1985-05-17 Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source

Country Status (7)

Country Link
EP (1) EP0221897A1 (en)
JP (1) JPS62503064A (en)
AU (1) AU578707B2 (en)
DK (1) DK24487D0 (en)
FI (1) FI870181A0 (en)
NO (1) NO870194L (en)
WO (1) WO1986006875A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0263815A4 (en) * 1986-04-09 1988-11-29 Schumacher Co J C Semiconductor dopant vaporizer.

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
DE2222736A1 (en) * 1972-05-09 1973-11-22 Siemens Ag METHOD OF ION IMPLANTATION
DE2408829C2 (en) * 1974-02-23 1984-03-22 Ibm Deutschland Gmbh, 7000 Stuttgart Boron ion source material and process for its manufacture
US4074139A (en) * 1976-12-27 1978-02-14 Rca Corporation Apparatus and method for maskless ion implantation
FR2383702A1 (en) * 1977-03-18 1978-10-13 Anvar IMPROVEMENTS IN METHODS AND DEVICES FOR DOPING SEMICONDUCTOR MATERIALS
FR2412939A1 (en) * 1977-12-23 1979-07-20 Anvar HIGH CURRENT ION IMPLANTER
JPS57174467A (en) * 1981-04-20 1982-10-27 Inoue Japax Res Inc Ion working device
JPS57182956A (en) * 1981-05-07 1982-11-11 Hitachi Ltd Ion-implantation device
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
JPS60109260A (en) * 1983-11-15 1985-06-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Compensated polycrystalline silicon resistance element

Also Published As

Publication number Publication date
NO870194D0 (en) 1987-01-16
DK24487A (en) 1987-01-16
NO870194L (en) 1987-03-10
FI870181A0 (en) 1987-01-16
DK24487D0 (en) 1987-01-16
EP0221897A1 (en) 1987-05-20
WO1986006875A1 (en) 1986-11-20
JPS62503064A (en) 1987-12-03
AU578707B2 (en) 1988-11-03

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