NO870194D0 - IONE IMPLANTATION USING ALKALI OR EARTHALKALIA METAL TETRAFLUOROBORATE AS BORIONE SOURCE. - Google Patents

IONE IMPLANTATION USING ALKALI OR EARTHALKALIA METAL TETRAFLUOROBORATE AS BORIONE SOURCE.

Info

Publication number
NO870194D0
NO870194D0 NO1987870194A NO870194A NO870194D0 NO 870194 D0 NO870194 D0 NO 870194D0 NO 1987870194 A NO1987870194 A NO 1987870194A NO 870194 A NO870194 A NO 870194A NO 870194 D0 NO870194 D0 NO 870194D0
Authority
NO
Norway
Prior art keywords
earthalkalia
borione
ione
implantation
alkali
Prior art date
Application number
NO1987870194A
Other languages
Norwegian (no)
Other versions
NO870194L (en
Inventor
Andre Langendijk
Shantia Riahi
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of NO870194D0 publication Critical patent/NO870194D0/en
Publication of NO870194L publication Critical patent/NO870194L/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
NO87870194A 1985-05-17 1987-01-16 IONE IMPLANTATION USING ALKALI OR EARTHALKALIA METALTETRAFLUOROBORATE AS BORIONE SOURCE. NO870194L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1985/000932 WO1986006875A1 (en) 1985-05-17 1985-05-17 Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source

Publications (2)

Publication Number Publication Date
NO870194D0 true NO870194D0 (en) 1987-01-16
NO870194L NO870194L (en) 1987-03-10

Family

ID=22188685

Family Applications (1)

Application Number Title Priority Date Filing Date
NO87870194A NO870194L (en) 1985-05-17 1987-01-16 IONE IMPLANTATION USING ALKALI OR EARTHALKALIA METALTETRAFLUOROBORATE AS BORIONE SOURCE.

Country Status (7)

Country Link
EP (1) EP0221897A1 (en)
JP (1) JPS62503064A (en)
AU (1) AU578707B2 (en)
DK (1) DK24487D0 (en)
FI (1) FI870181A0 (en)
NO (1) NO870194L (en)
WO (1) WO1986006875A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616385B2 (en) * 1986-04-09 1994-03-02 エアー・プロダクツ・アンド・ケミカルズ・インコーポレーテッド Evaporator

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
DE2222736A1 (en) * 1972-05-09 1973-11-22 Siemens Ag METHOD OF ION IMPLANTATION
DE2408829C2 (en) * 1974-02-23 1984-03-22 Ibm Deutschland Gmbh, 7000 Stuttgart Boron ion source material and process for its manufacture
US4074139A (en) * 1976-12-27 1978-02-14 Rca Corporation Apparatus and method for maskless ion implantation
FR2383702A1 (en) * 1977-03-18 1978-10-13 Anvar IMPROVEMENTS IN METHODS AND DEVICES FOR DOPING SEMICONDUCTOR MATERIALS
FR2412939A1 (en) * 1977-12-23 1979-07-20 Anvar HIGH CURRENT ION IMPLANTER
JPS57174467A (en) * 1981-04-20 1982-10-27 Inoue Japax Res Inc Ion working device
JPS57182956A (en) * 1981-05-07 1982-11-11 Hitachi Ltd Ion-implantation device
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
JPS60109260A (en) * 1983-11-15 1985-06-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Compensated polycrystalline silicon resistance element

Also Published As

Publication number Publication date
FI870181A0 (en) 1987-01-16
EP0221897A1 (en) 1987-05-20
DK24487A (en) 1987-01-16
DK24487D0 (en) 1987-01-16
NO870194L (en) 1987-03-10
JPS62503064A (en) 1987-12-03
AU578707B2 (en) 1988-11-03
AU4431585A (en) 1986-12-04
WO1986006875A1 (en) 1986-11-20

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