FI870181A0 - JONIMPLANTATION MEDELST TETRAFLUORBORAT. - Google Patents

JONIMPLANTATION MEDELST TETRAFLUORBORAT.

Info

Publication number
FI870181A0
FI870181A0 FI870181A FI870181A FI870181A0 FI 870181 A0 FI870181 A0 FI 870181A0 FI 870181 A FI870181 A FI 870181A FI 870181 A FI870181 A FI 870181A FI 870181 A0 FI870181 A0 FI 870181A0
Authority
FI
Finland
Prior art keywords
jonimplantation
tetrafluorborat
medelst
medelst tetrafluorborat
jonimplantation medelst
Prior art date
Application number
FI870181A
Other languages
Finnish (fi)
Inventor
Andre Lagendijk
Shantia Riahi
Original Assignee
Schumacher Co J C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schumacher Co J C filed Critical Schumacher Co J C
Publication of FI870181A0 publication Critical patent/FI870181A0/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
FI870181A 1985-05-17 1987-01-16 JONIMPLANTATION MEDELST TETRAFLUORBORAT. FI870181A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1985/000932 WO1986006875A1 (en) 1985-05-17 1985-05-17 Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source

Publications (1)

Publication Number Publication Date
FI870181A0 true FI870181A0 (en) 1987-01-16

Family

ID=22188685

Family Applications (1)

Application Number Title Priority Date Filing Date
FI870181A FI870181A0 (en) 1985-05-17 1987-01-16 JONIMPLANTATION MEDELST TETRAFLUORBORAT.

Country Status (7)

Country Link
EP (1) EP0221897A1 (en)
JP (1) JPS62503064A (en)
AU (1) AU578707B2 (en)
DK (1) DK24487D0 (en)
FI (1) FI870181A0 (en)
NO (1) NO870194L (en)
WO (1) WO1986006875A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987006389A1 (en) * 1986-04-09 1987-10-22 J.C. Schumacher Company Semiconductor dopant vaporizer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
DE2222736A1 (en) * 1972-05-09 1973-11-22 Siemens Ag METHOD OF ION IMPLANTATION
DE2408829C2 (en) * 1974-02-23 1984-03-22 Ibm Deutschland Gmbh, 7000 Stuttgart Boron ion source material and process for its manufacture
US4074139A (en) * 1976-12-27 1978-02-14 Rca Corporation Apparatus and method for maskless ion implantation
FR2383702A1 (en) * 1977-03-18 1978-10-13 Anvar IMPROVEMENTS IN METHODS AND DEVICES FOR DOPING SEMICONDUCTOR MATERIALS
FR2412939A1 (en) * 1977-12-23 1979-07-20 Anvar HIGH CURRENT ION IMPLANTER
JPS57174467A (en) * 1981-04-20 1982-10-27 Inoue Japax Res Inc Ion working device
JPS57182956A (en) * 1981-05-07 1982-11-11 Hitachi Ltd Ion-implantation device
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
JPS60109260A (en) * 1983-11-15 1985-06-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Compensated polycrystalline silicon resistance element

Also Published As

Publication number Publication date
EP0221897A1 (en) 1987-05-20
AU4431585A (en) 1986-12-04
WO1986006875A1 (en) 1986-11-20
AU578707B2 (en) 1988-11-03
DK24487A (en) 1987-01-16
NO870194L (en) 1987-03-10
JPS62503064A (en) 1987-12-03
NO870194D0 (en) 1987-01-16
DK24487D0 (en) 1987-01-16

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Legal Events

Date Code Title Description
FA Application withdrawn

Owner name: J.C. SCHUMACHER COMPANY