DK24487D0 - ION IMPLANTATION USING ALKALI OR SOIL ALKALET METAL TETRAFLUORBORATE AS BORION SOURCE - Google Patents
ION IMPLANTATION USING ALKALI OR SOIL ALKALET METAL TETRAFLUORBORATE AS BORION SOURCEInfo
- Publication number
- DK24487D0 DK24487D0 DK024487A DK24487A DK24487D0 DK 24487 D0 DK24487 D0 DK 24487D0 DK 024487 A DK024487 A DK 024487A DK 24487 A DK24487 A DK 24487A DK 24487 D0 DK24487 D0 DK 24487D0
- Authority
- DK
- Denmark
- Prior art keywords
- borion
- alkalet
- tetrafluorborate
- soil
- alkali
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1985/000932 WO1986006875A1 (en) | 1985-05-17 | 1985-05-17 | Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source |
Publications (2)
Publication Number | Publication Date |
---|---|
DK24487A DK24487A (en) | 1987-01-16 |
DK24487D0 true DK24487D0 (en) | 1987-01-16 |
Family
ID=22188685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK024487A DK24487D0 (en) | 1985-05-17 | 1987-01-16 | ION IMPLANTATION USING ALKALI OR SOIL ALKALET METAL TETRAFLUORBORATE AS BORION SOURCE |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0221897A1 (en) |
JP (1) | JPS62503064A (en) |
AU (1) | AU578707B2 (en) |
DK (1) | DK24487D0 (en) |
FI (1) | FI870181A0 (en) |
NO (1) | NO870194L (en) |
WO (1) | WO1986006875A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1987006389A1 (en) * | 1986-04-09 | 1987-10-22 | J.C. Schumacher Company | Semiconductor dopant vaporizer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3477887A (en) * | 1966-07-01 | 1969-11-11 | Motorola Inc | Gaseous diffusion method |
DE2222736A1 (en) * | 1972-05-09 | 1973-11-22 | Siemens Ag | METHOD OF ION IMPLANTATION |
DE2408829C2 (en) * | 1974-02-23 | 1984-03-22 | Ibm Deutschland Gmbh, 7000 Stuttgart | Boron ion source material and process for its manufacture |
US4074139A (en) * | 1976-12-27 | 1978-02-14 | Rca Corporation | Apparatus and method for maskless ion implantation |
FR2383702A1 (en) * | 1977-03-18 | 1978-10-13 | Anvar | IMPROVEMENTS IN METHODS AND DEVICES FOR DOPING SEMICONDUCTOR MATERIALS |
FR2412939A1 (en) * | 1977-12-23 | 1979-07-20 | Anvar | HIGH CURRENT ION IMPLANTER |
JPS57174467A (en) * | 1981-04-20 | 1982-10-27 | Inoue Japax Res Inc | Ion working device |
JPS57182956A (en) * | 1981-05-07 | 1982-11-11 | Hitachi Ltd | Ion-implantation device |
US4385946A (en) * | 1981-06-19 | 1983-05-31 | Bell Telephone Laboratories, Incorporated | Rapid alteration of ion implant dopant species to create regions of opposite conductivity |
JPS60109260A (en) * | 1983-11-15 | 1985-06-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Compensated polycrystalline silicon resistance element |
-
1985
- 1985-05-17 EP EP19850902841 patent/EP0221897A1/en not_active Withdrawn
- 1985-05-17 AU AU44315/85A patent/AU578707B2/en not_active Ceased
- 1985-05-17 JP JP50250785A patent/JPS62503064A/en active Pending
- 1985-05-17 WO PCT/US1985/000932 patent/WO1986006875A1/en not_active Application Discontinuation
-
1987
- 1987-01-16 DK DK024487A patent/DK24487D0/en not_active Application Discontinuation
- 1987-01-16 FI FI870181A patent/FI870181A0/en not_active Application Discontinuation
- 1987-01-16 NO NO87870194A patent/NO870194L/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP0221897A1 (en) | 1987-05-20 |
AU4431585A (en) | 1986-12-04 |
WO1986006875A1 (en) | 1986-11-20 |
FI870181A0 (en) | 1987-01-16 |
AU578707B2 (en) | 1988-11-03 |
DK24487A (en) | 1987-01-16 |
NO870194L (en) | 1987-03-10 |
JPS62503064A (en) | 1987-12-03 |
NO870194D0 (en) | 1987-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AHB | Application shelved due to non-payment |