AU3894597A - Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation - Google Patents

Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation

Info

Publication number
AU3894597A
AU3894597A AU38945/97A AU3894597A AU3894597A AU 3894597 A AU3894597 A AU 3894597A AU 38945/97 A AU38945/97 A AU 38945/97A AU 3894597 A AU3894597 A AU 3894597A AU 3894597 A AU3894597 A AU 3894597A
Authority
AU
Australia
Prior art keywords
ferroelectrics
encapsulation
memory devices
based memory
curie point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU38945/97A
Other languages
English (en)
Inventor
Joseph T. Evans Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiant Technologies Inc
Original Assignee
Radiant Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiant Technologies Inc filed Critical Radiant Technologies Inc
Publication of AU3894597A publication Critical patent/AU3894597A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
AU38945/97A 1996-07-29 1997-07-25 Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation Abandoned AU3894597A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08688064 1996-07-29
US08/688,064 US5977577A (en) 1994-11-15 1996-07-29 Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
PCT/US1997/013082 WO1998005074A1 (en) 1996-07-29 1997-07-25 Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation

Publications (1)

Publication Number Publication Date
AU3894597A true AU3894597A (en) 1998-02-20

Family

ID=24762968

Family Applications (1)

Application Number Title Priority Date Filing Date
AU38945/97A Abandoned AU3894597A (en) 1996-07-29 1997-07-25 Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation

Country Status (6)

Country Link
US (1) US5977577A (https=)
EP (1) EP0946989A1 (https=)
JP (1) JPH11514158A (https=)
KR (1) KR20000029616A (https=)
AU (1) AU3894597A (https=)
WO (1) WO1998005074A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541807A (en) * 1995-03-17 1996-07-30 Evans, Jr.; Joseph T. Ferroelectric based capacitor for use in memory systems and method for fabricating the same
US6312816B1 (en) * 1998-02-20 2001-11-06 Advanced Technology Materials, Inc. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
KR100279297B1 (ko) * 1998-06-20 2001-02-01 윤종용 반도체 장치 및 그의 제조 방법
US6180461B1 (en) * 1998-08-03 2001-01-30 Halo Lsi Design & Device Technology, Inc. Double sidewall short channel split gate flash memory
US6171934B1 (en) * 1998-08-31 2001-01-09 Symetrix Corporation Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling
JP3495955B2 (ja) * 1999-03-26 2004-02-09 シャープ株式会社 半導体メモリ装置及びその製造方法
US6370056B1 (en) * 2000-03-10 2002-04-09 Symetrix Corporation Ferroelectric memory and method of operating same
SE517440C2 (sv) 2000-06-20 2002-06-04 Ericsson Telefon Ab L M Elektriskt avstämbar anordning och ett förfarande relaterande därtill
US6597028B2 (en) 2000-06-26 2003-07-22 Ramtron International Corporation Capacitively coupled ferroelectric random access memory cell and a method for manufacturing the same
US6800830B2 (en) 2000-08-18 2004-10-05 Hitachi Kokusai Electric, Inc. Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
WO2002082510A1 (en) * 2000-08-24 2002-10-17 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US20020164850A1 (en) 2001-03-02 2002-11-07 Gnadinger Alfred P. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US6825517B2 (en) 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6714435B1 (en) * 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US8604547B2 (en) 2005-02-10 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5119154A (en) * 1990-12-03 1992-06-02 Micron Technology, Inc. Ferroelectric capacitor and method for forming local interconnect
EP0516031A1 (en) * 1991-05-29 1992-12-02 Ramtron International Corporation Stacked ferroelectric memory cell and method
US5850089A (en) * 1992-03-13 1998-12-15 American Research Corporation Of Virginia Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories
US5337279A (en) * 1992-03-31 1994-08-09 National Semiconductor Corporation Screening processes for ferroelectric memory devices
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US5572052A (en) * 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
JPH0730077A (ja) * 1993-06-23 1995-01-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3319869B2 (ja) * 1993-06-24 2002-09-03 三菱電機株式会社 半導体記憶装置およびその製造方法
US5499207A (en) * 1993-08-06 1996-03-12 Hitachi, Ltd. Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same
JPH07111318A (ja) * 1993-10-12 1995-04-25 Olympus Optical Co Ltd 強誘電体メモリ
US5525528A (en) * 1994-02-23 1996-06-11 Ramtron International Corporation Ferroelectric capacitor renewal method
US5760432A (en) * 1994-05-20 1998-06-02 Kabushiki Kaisha Toshiba Thin film strained layer ferroelectric capacitors
US5541807A (en) * 1995-03-17 1996-07-30 Evans, Jr.; Joseph T. Ferroelectric based capacitor for use in memory systems and method for fabricating the same
WO1996015556A1 (en) * 1994-11-15 1996-05-23 Radiant Technologies, Inc. Integrated circuit capacitors utilizing low curie point ferroelectrics
US5739563A (en) * 1995-03-15 1998-04-14 Kabushiki Kaisha Toshiba Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same

Also Published As

Publication number Publication date
EP0946989A1 (en) 1999-10-06
EP0946989A4 (https=) 1999-10-13
US5977577A (en) 1999-11-02
WO1998005074A1 (en) 1998-02-05
KR20000029616A (ko) 2000-05-25
JPH11514158A (ja) 1999-11-30

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