AU2020103264A4 - A multi-resistance non-volatile ferroelectric tunnel junction based on ferroelastic domain switching - Google Patents
A multi-resistance non-volatile ferroelectric tunnel junction based on ferroelastic domain switching Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 230000015654 memory Effects 0.000 claims abstract description 8
- 230000005641 tunneling Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 238000004549 pulsed laser deposition Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000010970 precious metal Substances 0.000 claims description 5
- 229910004121 SrRuO Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000005291 magnetic effect Effects 0.000 abstract description 4
- 238000003860 storage Methods 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910003781 PbTiO3 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The design of multi-resistance non-volatile ferroelectric tunnel junction based on ferroelastic
5 domain switching belongs to electronic technology field, which solves magnetic tunnel junction's
existing problems of high energy consumption, slow read-write speed and low storage density.
The invention is a tunnel junction composed of four-layer structure, a single crystal substrate, a
bottom electrode, an ultrathin ferroelectric insulating layer and a top electrode, arranged in
sequence from bottom to top. The ultrathin ferroelectric insulating layer is 2-5 nm thick with
0 multidomain state maintained by substrate mismatch strain. Ferroelastic domain switching can
be achieved in this ultrathin ferroelectric insulating layer and enables different tunneling
resistance under various driving voltages in film vertical direction. The invention is mainly applied
to the memories.
1/2
4
~r~3
2
Figure 1
4
3
Figure 2
Polarization states
State 1 State 2 State 3
Figure 3
V State 3
State 2
I LI t
State 1
Figure 4
Description
1/2
4 ~r~3 2
Figure 1
4 3
Figure 2
Polarization states
State 1 State 2 State 3
Figure 3
V State 3 State 2
I LI t State 1
Figure 4
Technical Field
The invention is mainly applied to the memories.
Background technology
With the demand for portable electronic products, integrated micro-nano circuits and
devices with small-size, high-density,and low-power are of great interest.Traditional non-volatile
memories, such as 'flash', ferroelectric memoryand phase change memory, has low stability,high
power consumption,low integration level, making them cannot meet the future demand.
o Ferroelectric tunnel junction has been proved with high density, high rate, and low reading
voltage, which is promising as a future memory.
Ferroelectric tunnel junction includes a highly quality of ultrathin epitaxial ferroelectric film.
This ultrathin film with about 2 nm thickness under 6 V high voltage usually suffers electric field
breakdown problem. Thus, lowering the operation voltage is of great importance. Ultrathin
ferroelectric film with multidomain state has low energy barrier for domain switching, and could
enable a low-voltage control.
Tunneling current in current tunnel junctions with the form of magnetic-insulating-magnetic
materials is controlled by manipulate thepolarization states of two magnetic materials under
magnetic fields.The insulating layer could be replaced by a semiconductor material to achieve a
o higher resistance switching ratio. However, this technology requires a higher driving field.
Besides, these ferromagnetic-based tunnel junctions has lowread-write speed, which requires
improvement to meet the current demand for high speed, high density and low energy
consumption.
Ferroelectric tunneling memory was first proposed by L. Esaki et al. in 1971 [IBM Techn.
Discl. Bull. 13,2,2161(1971)]. However,this technology has not been practically applied due to
immature film preparation technology. With the improvement of ferroelectric thin films fabrication
technology, high resistance switching effect in ferroelectric tunnel junction was obtained for the
first time.Although the current ferroelectric tunnel junctions break through the limit of magnetic
tunnel junction's low-speed, they can only realize the flip oftwo resistance states, and the
ferroelectric layer requires a large driving voltage under the substrate clamping.Therefore,a
preparation technology of tunnel junction with low driving voltage, high read-write speed characteristics and breaking through the two resistance state limits is in urgent need to meet the current demand for high-density and low-energy storage devices.
Invention contents
The invention aims to solve the problems in existing magnetic tunnel junctions of high energy
consumption, slow read-write speed and low storage density.This invention provides a multi
resistance non-volatile ferroelectric tunnel junction based on ferroelastic domain switching.
The multi-resistance non-volatile ferroelectric tunnel junction based on ferroelastic domain
switching composed of four-layer structure,a single crystal substrate,a bottom electrode,an
ultrathin ferroelectric insulating layer and a top electrode,arranged in sequence from bottom to
o top.
The ultrathin ferroelectric insulating layer is 2-5 nm thick with multidomain state maintained
by substrate mismatch strain. Ferroelastic domain switching can be achieved in this ultrathin
ferroelectric insulating layer and enables different tunneling resistance under various driving
voltages in film vertical direction.
Preferably,the bottom electrode is a conductive metal oxide, the top electrode is a kind of
precious metal, the ultrathin ferroelectric insulating layer is a perovskite ferroelectric
monocrystallinefilm.
Preferably,the single crystal substrate and the bottom electrode are implemented by
SmScO 3 and SrRuO 3 respectively,the ultrathin ferroelectric insulating layer is achieved by PbTiO 3
o or BaTiO3 .
Preferably,when the ultrathin ferroelectric insulating layer is achieved by PbTiO3 , the
substate mismatch strain of PbTiO3 ranges from 0.2% to 0.8%.
Preferably,when the ultrathin ferroelectric insulating layer is achieved by PbTiO 3 ,the best
substate mismatch strain of PbTiO 3 is 0.46%.
Preferably,the top electrode is made by Pt.
The preparation method of the multi-resistance non-volatile ferroelectric tunnel junction
based on ferroelastic domain switching includes the following steps:
Step 1:Heat the single crystal substrate to 650°750°Cwith the oxygen pressure atmosphere
ranges from 20mTorr to 200mTorr.Use pulsed laser deposition method (PLD) to deposit
conductive metal oxide on the single crystal substrate with a 10-20nm deposition
thickness,thereby forming the bottom electrode on the single crystal substrate;
Step 2:Heat the single crystal substrate to 650 -750 with the oxygen pressure atmosphere
ranges from 20mTorr to 200mTorr.Use pulsed laser deposition method (PLD) to deposit
perovskite ferroelectric monocrystalline film on the the bottom electrode with a 2nm to 5nm
deposition thickness,thereby forming the ultrathin ferroelectric insulating layer on the bottom
electrode;
Step 3:Use magnetron sputtering method to deposit precious metal on the ultrathin
ferroelectric insulating layer to form an array shaped top electrodesbyphotolithography,thereby
completing the preparation of the tunnel junction.
Preferably,the array gap of the top electrode(4) is 100-200nm.
o Principle analysis: Multidomain structurefrom an ultrathin ferroelectric insulating layer coexist
within a thin film grown on a certain substrate. This coexistence statecan realize the flip of three
polarization states at a low voltage by changing the thickness of insulating layer and barrier
height to change the tunnel current density and tunnel resistance state effectively.
The invention, a multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching,includes a single crystal substrate,a bottom electrode,an ultrathin
ferroelectric insulating layer and a top electrode.The bottom electrode and the ultrathin
ferroelectric insulating layer are epitaxially deposited on the single crystal substrate by pulsed
laser correspond to the size of the ferroelectric single crystal. Thelattice sizemismatch strain
between the ferroelectric layer and the substate should be close to the phase/domain boundary
o ofcorresponding phase diagram.For example, a PbTiO 3 ferroelectric thin film could match with a
SmScOssubstrate(Samarium scandate)with a mismatch strain of 0.486%.The domain structure of
the ultrathin ferroelectric insulating layer also requires the preparation of the PbTiO 3 ferroelectric
thin film and the bottom electrode by controlling the growth temperature and oxygen pressure
atmosphere.
The beneficial effect brought by the invention is that the invention breaks through the
limitation of existing two-resistance statetunnel junction, and realizes three-resistance state by
changing the domain structure only.And the write voltage of tunnel junction drops below 1V, read
voltage is under 500mV, which greatly reduces energy consumption of read and write.The energy
consumption is reduced by more than 20%, the read-write speed is increased by more than 50%,
meanwhile the storage density improves.
Figure Legends
Figure 1 shows the structure diagram of the invention'A multi-resistance non-volatile
ferroelectric tunnel junction based on ferroelastic domain switching';
Figure 2 shows the top view of figure 1;
Figure 3 shows scheme diagram of polarization state in ultrathin ferroelectric layer of the
invention'A multi-resistance non-volatile ferroelectric tunnel junction based on ferroelastic domain
switching'. In figure 3,-P3 representsdownward polarizationstate of the single domain; P1/P 2
represents a group of in-plane polarization states;P3 represents the single domain polarization
upward state;
o Figure 4 shows a waveform diagram of driving voltage required for resistance state related
to each polarization state in figure 3;
Figure 5 shows diagram of relationship between the applied voltage and current density of
each resistance state;
Figure 6 shows flow diagram of array electrode prepared by lithography;
Figure 7 shows energy-density phase diagram when the ultrathin ferroelectric insulation
layer is made by PbTiO 3 ;ln figure 7,a/c represents the energy-density curve of multi-domain state,
c represents energy-density curve of the single domain polarization state,a 1 /a 2representsenergy
density curve of series in-plane polarization states.
Specificimplementation
o Specific implementation1:Refer to Figure 1 to Figure 5 to illustrate this
implementation.According to implementation, a multi-resistance non-volatile ferroelectric tunnel
junction based on ferroelastic domain switching composed of four-layer structure arranged in
sequence from bottom to top,which composed of a single crystal substrate(1),a bottom
electrode(2),an ultrathin ferroelectric insulating layer(3) and a top electrode(4) .
The ultrathin ferroelectric insulating layer is 2-5 nm thick with multidomain state maintained
by substrate mismatch strain. Ferroelastic domain switching can be achieved in this ultrathin
ferroelectric insulating layer and enables different tunneling resistance under various driving
voltages in film vertical direction. The invention is mainly applied to the memories.
In this implementation,the designing of lattice matching state between the single crystal
substrate (1) and the ferroelectric ultrathin insulating layer(3) makes the ultrathin ferroelectric
insulating layer(3) in a coexistence state,and then three different tunnel resistances could be obtained by changing driving voltageand thedomain structurestate.In other words, three resistance states could be converted mutually under different driving voltages.
Multidomain structuregrown from an ultrathin ferroelectric insulating layeron a certain
substrate. This coexistence state in this film can realize the flip of three polarization states at a
low voltage by changing the thickness of insulating layer and barrier height to change the tunnel
current density and tunnel resistance state effectively.
Specific implementation2;Refer to Figure 1 to Figure 7 to illustrate this implementation.The
different between the multi-resistance states of multi-resistance non-volatile ferroelectric tunnel
junction based on ferroelastic domain switching illustrated in this implementation and the same
thing in implementation 1 is the bottom electrode(2) is a conductive metal oxide, the top
electrode(4) is a precious metaland the ultrathin ferroelectric insulating layer(3) is a perovskite
ferroelectric single crystal film.
Generally,using BaTiO 3,PbTiO 3 and Pb(ZrTi)0 3 to achieve perovskite ferroelectric single
crystal film in this implementationin this implementation.
Specific implementation3;Refer to Figure 1 to Figure 7 to illustrate this implementation.The
different between multi-resistance state ferroelectric tunnel junction based on ferroelastic domain
switching illustrated in this implementation and the same thing in implementation2 is the single
crystal substrate(1) is realized by SmScO 3 , the bottom electrode(2) is realized by SrRuO 3 ,and the
ultrathin ferroelectric insulating layer(3) is realized by PbTiO 3 or BaTiO 3 .
o In this implementation, Use PbTiO 3 to achieve ultrathin ferroelectric insulation layer(3).Figure
7 shows the energy-density phase diagram of PbTiO3 .Use SmScO 3(a single crystal) with a lattice
matching strain of 0.48% with PbTiO 3as a substrate. When the mismatch strain of the ultrathin
ferroelectric insulating layer(3) is around 0.46%, a/c domainand al/a2 domaincoexist.The
specific implementation is that select SmScO 3 as the substrate of PbTiO 3 thin film,and the bottom
electrode (2) could be implemented by using SrRuO 3 with similar lattice parameters.
Due to multidomain coexist and energy densities of various domains are similar as shown in
Figure 7,various domains are in a competitive state, a finer domain structure could be formed.
The current domain size could be reduced to 20nm to greatly increase the information storage
density.
Specific implementation4;Refer to Figure 1 to Figure 7 to illustrate this implementation. The
multi-resistance states of non-volatile ferroelectric tunnel junction based on ferroelastic domain
switching illustrated in this implementation and the same thing in implementation3 is when the ultrathin ferroelectric insulating layer(3) is achieved by PbTiO 3, the substate mismatch strain of
PbTiO 3 ranges from 0.2% to 0.8%
Specific implementation5;Refer to Figure 1 to Figure 7 to illustrate this implementation. The
multi-resistance states of non-volatile ferroelectric tunnel junction based on ferroelastic domain
switching illustrated in this implementation and the same thing in implementation4 is when the
ultrathin ferroelectric insulating layer(3) is achieved by PbTiO 3, the substate mismatch strain of
PbTiO 3 is 0.46%.
Specific implementation6;Refer to Figure 1 to Figure 7 to illustrate this implementation.The
different between the multi-resistance states of non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching illustrated in this implementation and the same thing in
implementation is the top electrode is made by Pt.
Specific implementation7;Refer to Figure 1 to Figure 7 to illustrate this implementation. The
different between the multi-resistance states of non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching illustrated in this implementation and the same thing in
implementation6 is the preparationof multi-resistance non-volatile ferroelectric tunnel junction
based on ferroelastic domain includes the following steps :
Step 1:Heat the single crystal substrate to 650°750°Cwith the oxygen pressure atmosphere
ranges from 20mTorr to 200mTorr.Use pulsed laser deposition method (PLD) to deposit
conductive metal oxide on the single crystal substrate with a 10-20nm deposition
o thickness,thereby forming the bottom electrode on the single crystal substrate;
Step 2:Heat the single crystal substrate to 650°750°Cwith the oxygen pressure atmosphere
ranges from 20mTorr to 200mTorr.Use pulsed laser deposition method (PLD) to deposit
perovskite ferroelectric monocrystalline film on the bottom electrode with a 2nm to 5nm
deposition thickness,thereby forming the ultrathin ferroelectric insulating layer on the bottom
electrode;
Step 3:Use magnetron sputtering method to deposit precious metal on the ultrathin
ferroelectric insulating layer to form an array shaped top electrodesbyphotolithography,thereby
completing the preparation of the tunnel junction.
In this implementation,a magnetron sputtering method is used to deposit precious metals
such as platinum Pt, and a photolithography method is used to obtain an electrode array, as
shown in Figure 6.
Specific implementation8;Refer to Figure 1 to Figure 5 to illustrate this implementation.The
different between multi-resistance non-volatile ferroelectric tunnel junction based on ferroelastic
domain switching illustrated in this implementation and the same thing in implementation 7 is the
array gap of the top electrode(4) is 100-200nm.
The structure of multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching is not limited to the specific structure described inabove
implementations,and even could be a reasonable combination of technical features.
Claims (8)
1. The multi-resistance non-volatile ferroelectric tunnel junction based on ferroelastic domain
switchingcomposed of four-layer structure, a single crystal substrate (1), a bottom electrode (2),
an insulating layer (3) and a top electrode (4) arranged in sequence from bottom to topas its
epitaxial structure.
The ultrathin ferroelectric insulating layer (3) is 2-5 nm thick with multidomain state
maintained by substrate mismatch strain. Ferroelastic domain switching can be achieved in this
ultrathin ferroelectric insulating layer (3) and enables different tunneling resistance under various
driving voltages in vertical film direction. The invention is mainly applied to the memories.
2. The characteristic of the multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching according to claim 1 lies in the bottom electrode(2) is a conductive
metal oxide, the top electrode (4) is a precious metal, the ultrathin ferroelectric insulating layer(3)
is a perovskite ferroelectric monocrystalline film.
3. The characteristic of the multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching according to claim 1 lies in the single crystal substrate(1) and the
bottom electrode(2) which are SmScO 3 and SrRuO 3 films respectively.The ultrathin ferroelectric
insulating layer(3) is PbTiO 3 or BaTiO3 epitaxial thin films.
4. The characteristic of the multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching according to claim 3 lies in the substate mismatch strain of PbTiO 3
ranging from 0.2% to 0.8%for the ultrathin ferroelectric insulating layer(3) PbTiO 3 film.
5. The characteristic of the multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching according to claim 4 lies in that when the ultrathin ferroelectric
insulating layer(3) is PbTiO 3,the bestsubstate mismatch strain ofPbTiO 3 is 0.46%.
6. The characteristic of the multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching according to claim 2 lies inthe top electrode(4) is made by Pt.
7. The characteristic of the multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching lies in the method includes the following steps:
Step 1:Heat the single crystal substrate(1) to 650°(750°C under the oxygen pressure
atmosphere ranges from 20mTorr to 200mTorr.Use pulsed laser deposition method (PLD) to
deposit conductive metal oxide on the single crystal substrate(1) with a 10-20nm deposition
thickness,forming the bottom electrode(2) on the single crystal substrate(1) ;
Step 2:Heat the single crystal substrate(1) to 650 -750 under the oxygen pressure
atmosphere ranges from 20mTorr to 200mTorr.Use pulsed laser deposition method (PLD) to
deposit perovskite ferroelectric monocrystalline film on the bottom electrode(2) with a 2-5nm
deposition thickness,forming the ultrathin ferroelectric insulating layer(3) on the bottom
electrode(2);
Step3:Use magnetron sputtering method to deposit Pt on the ultrathin ferroelectric insulating
layer(3) to form an array of top electrodes(4)by photolithography.
8. The characteristic of the multi-resistance non-volatile ferroelectric tunnel junction based on
ferroelastic domain switching according to claim 7 should has top electrode with array with gap
ranging from 100 to 200nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594364A (en) * | 2021-08-06 | 2021-11-02 | 佛山湘潭大学绿色智造研究院 | Multi-vortex ferroelectric domain multi-logic-state storage unit and power regulation method |
| CN115216745A (en) * | 2022-06-30 | 2022-10-21 | 中国工程物理研究院电子工程研究所 | Piezoelectric thick film preparation method based on sequential physical deposition and industrial-grade piezoelectric thick film |
-
2020
- 2020-11-05 AU AU2020103264A patent/AU2020103264A4/en not_active Ceased
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594364A (en) * | 2021-08-06 | 2021-11-02 | 佛山湘潭大学绿色智造研究院 | Multi-vortex ferroelectric domain multi-logic-state storage unit and power regulation method |
| CN113594364B (en) * | 2021-08-06 | 2023-09-19 | 佛山湘潭大学绿色智造研究院 | Multi-logic state storage unit with multi-vortex ferroelectric domain and electric power regulation and control method |
| CN115216745A (en) * | 2022-06-30 | 2022-10-21 | 中国工程物理研究院电子工程研究所 | Piezoelectric thick film preparation method based on sequential physical deposition and industrial-grade piezoelectric thick film |
| CN115216745B (en) * | 2022-06-30 | 2023-09-05 | 中国工程物理研究院电子工程研究所 | Piezoelectric thick film preparation method based on sequential physical deposition and industrial-grade piezoelectric thick film |
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