CN102738391A - Resistance random access memory with adjustable dielectric layer magnetic property - Google Patents
Resistance random access memory with adjustable dielectric layer magnetic property Download PDFInfo
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- CN102738391A CN102738391A CN2012101869886A CN201210186988A CN102738391A CN 102738391 A CN102738391 A CN 102738391A CN 2012101869886 A CN2012101869886 A CN 2012101869886A CN 201210186988 A CN201210186988 A CN 201210186988A CN 102738391 A CN102738391 A CN 102738391A
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Abstract
The invention discloses a resistance random access memory with adjustable dielectric layer magnetic property. The resistance random access memory comprises a bottom electrode, a top electrode and a dielectric layer which is positioned between the bottom electrode and the top electrode, wherein both the bottom electrode and the top electrode are platinum electrodes or gold electrodes; and the dielectric layer is a zinc oxide high impedance rare magnetic oxide film which is doped with transition metals of Co, Fe, Ni and the like, and the ZnO film which has the rare magnetic property consists of the following elements in atomic percentage: the transition metals are 1.0-3.0 at. %, Zn is 47.0-49.0 at. %, and the balance is O. A variable impedance mode is adopted to adjust the magnetic variation of the ZnO-based rare magnetic oxide storage dielectric layer, and the magnetic strong and weak variation can be used as information to be stored, so the information storage dimensionality is increased.
Description
Technical field
The present invention relates to a kind of resistance-variable storing device of adjustable dielectric layer magnetic.
Background technology
Utilize device architecture that magnetic performance and the electric property of solid-state material realize information stores by extensive studies, comprise magnetic reading head, MAGNETIC RANDOM ACCESS MEMORY, flash memories, resistance-variable storing device etc.Usually in these technology, the attribute of electronic spin and electric charge is an independent utility.Such as, in magnetic reading head, magnetic field is used for reading and writing out the information that is stored in the magnetic; In resistance-variable storing device,, can realize that the height of storage medium resistance changes, with two logic states " 0 " of realization information and the storage of " 1 " through the excitation of the signal of telecommunication.Seek the high density information storage at present and encouraging the research that can be implemented in the regulation and control of non-magnetic field magnetic always; Realizing electrical property and interactional a kind of novel memory device of magnetic property while, this can improve erasable, the speed of operation such as transmitting, handle, read of information and the energy consumption that reduces device greatly.
Method regulation and control magnetic through electricity is to realize the key means of non-magnetic field magnetic regulation and control, and broad research in multiple material comprises metal material, magnetoelectricity multi-iron material, dilute magnetic semiconductor etc.Two kinds of degrees of freedom of spin that dilute magnetic semiconductor is integrated and electric charge can realize in the dilute magnetic semiconductor system that the mode of the electricity of intrinsic regulates and control magnetic.Resistance-variable storing device is the important research field of current realization electric resistance changing mode owing to have great on-off ratio, wherein follows the change of magnetic property possible in the electric resistance changing process but to be left in the basket.If can in magnetic medium, realize the storage of magnetic property and the storage of electrical property simultaneously; Then very likely realize more jumbo storage organization; Increase the dimension of storage; Thereby widen the application of random asccess memory, the collection of vectors of two kinds of stored informations of magnetic and electricity is in the same place, improved the speed and the capacity of information stores greatly.
Summary of the invention
The resistance-variable storing device that the purpose of this invention is to provide a kind of adjustable dielectric layer magnetic.
The resistance-variable storing device of adjustable dielectric layer magnetic provided by the present invention comprises hearth electrode, top electrode and the dielectric layer between said hearth electrode and top electrode (change resistance layer); Wherein, said hearth electrode and top electrode are platinum electrode or gold electrode; Said dielectric layer is the transient metal doped rare magnetic sull of zinc oxide high-impedance state, and this ZnO film with rare magnetic characteristic is made up of the element of following atomic percent: transition metal is 1.0～3.0at. ﹪, and Zn is 47.0～49.0at. ﹪, and all the other are O.Said transition metal is selected from following at least a: Co, Fe and Ni.
In the resistance-variable storing device of above-mentioned adjustable dielectric layer magnetic, the thickness of dielectric layer can be 20～200nm.
The mode that the present invention adopts resistance to become; Promptly through applying gate voltage; Realize the transformation of the height/low resistance state of resistance-change memory device; Regulate and control the variation of the rare magnetic oxide of transient metal doped zno-based storage medium layer magnetic simultaneously, the strong and weak variation of this magnetic can increase the dimension of information stores as the storage of information.
Be that the resistance of Pt/ZnO:Co/Pt becomes device and is example with the structure,, become in device in this resistance through the mode of electric excitation; Because the resistance variable mechanism of oxygen migration when the resistance realization resembles generation, has changed the inner oxygen vacancy concentration of storage medium ZnO:Co film and has distributed; The concentration in oxygen room is the effective means of the rare magnetic thin film magnetic of regulation and control zno-based; Therefore make the magnetic of device that change take place, caused when the resistance height occurring, realized the weak strong of device magnetic; Thereby realized of the regulation and control of resistance change effect, possibility is provided in the information-storing device for it is applied in to rare magnetic sull magnetic.
The present invention is used as the transient metal doped zinc-oxide film of high-impedance state the dielectric layer of Nonvolatile resistance variation memory; Take to apply the mode of voltage; When realizing that elephant is cashed in resistance; Obtained the strong and weak circulation change of magnetic, this provides reliable thinking for the storage with the storage of magnetic property and electrical property is integrated on resistance-variable storing device.
Embodiment
Fig. 1 becomes exemplary currents-voltage (I-V) curve of device for the Pt/ZnO:Co/Pt resistance of embodiment preparation.
Fig. 2 becomes the saturation magnetic moment (M that gives birth to the resistance sell of one's property of device for the Pt/ZnO:Co/Pt resistance of embodiment preparation
S) change curve and coercive force (H
C) change curve.
Embodiment
Below in conjunction with specific embodiment the present invention is done further elaboration, but the present invention is not limited to following examples.Experimental technique described in the following embodiment like no specified otherwise, is conventional method; Said material like no specified otherwise, all can obtain from commercial sources." at. ﹪ " among the following embodiment represents atomic percent.
Embodiment:
The mode that adopts reactive magnetron sputtering is at Si (100)/SiO
2(500nm)/Ti (15nm)/Pt (100nm) substrate on the deposition Co ZnO thin film doped; The about 60nm of thickness; Its constituent: Co is 3.0at. ﹪, and Zn is 47.0at. ﹪, and all the other are O; Using the method for mask on Co is ZnO thin film doped, to deposit size then is the Pt top electrode of 300 μ m, the about 100nm of thickness.Prepared film has room-temperature ferromagnetic, has shown the characteristic of dilute magnetic semiconductor; After the four point probe test, find that this structure initial state resistance is higher, about 8000 Ω have stable resistance and become cycle performance, on-off ratio about 10
2(see figure 1).Utilize positive voltage that sample all is reset to low resistance state (about 50 Ω),, find saturation magnetic moment (M through its magnetic of superconduction pulse magnetometer survey
S) 5.8 μ emu when 3.2 μ emu during from high-impedance state (HRS) obviously bring up to low resistance state (LRS), increase rate about 80%.Again it is reset to high-impedance state, is about 8000 Ω, measure its magnetic; Find that magnetic reduces by 2.3 μ emu; Stably measured several times, found that all the resistance change effect has tangible regulating and controlling effect to the ZnO:Co thin film magnetic, high-impedance state corresponding low magnetic attitude and coercive force (H
C, about 68Oe), low resistance state corresponding high magnetic attitude and coercive force (about 94Oe) (see figure 2).
When the composition that above-mentioned Co is ZnO thin film doped replaces with: transition metal is 1.0～3.0at. ﹪, and Zn is 47.0～49.0at. ﹪, and all the other are the film of O.This film has the performance of regulating and control magnetic through resistance change mode equally.
When also having an identical performance with the ZnO thin film doped Fe of replacing with of above-mentioned Co or Ni are ZnO thin film doped.
The mechanism of this regulating and controlling effect is: the oxygen room is the major reason that dilute magnetic semiconductor magnetic produces; When high-impedance state becomes low resistance state, introduce a large amount of oxygen rooms, and formed the conductive channel in oxygen room, made the magnetic of ZnO:Co film strengthen; When low resistance state became high-impedance state, the oxygen room was returned to original position, and oxygen vacancy concentration reduces, and made the magnetic of ZnO:Co film reduce.Therefore make the magnetic of device that change take place; Caused when the resistance height occurring; Realized the weak strong of device magnetic; Thereby realized the regulation and control of resistance change effect to diluted semi-conductor thin-film dielectric layer magnetic, this provides reliable thinking for the storage with the storage of magnetic property and electrical property is integrated on resistance-variable storing device.
Claims (6)
1. the resistance-variable storing device of an adjustable dielectric layer magnetic comprises hearth electrode, top electrode and the dielectric layer between said hearth electrode and top electrode; It is characterized in that: said dielectric layer is transient metal doped zinc-oxide film.
2. the resistance-variable storing device of adjustable dielectric layer magnetic according to claim 1 is characterized in that: said transition metal is selected from following at least a: Co, Fe and Ni.
3. the resistance-variable storing device of adjustable dielectric layer magnetic according to claim 1 and 2 is characterized in that: said dielectric layer is made up of the element of following atomic percent: transition metal is 1.0～3.0 at. ﹪, and Zn is 47.0～49.0 at. ﹪, and all the other are O.
4. according to the resistance-variable storing device of each described adjustable dielectric layer magnetic among the claim 1-3, it is characterized in that: the thickness of said dielectric layer can be 20～200nm.
5. according to the resistance-variable storing device of each described adjustable dielectric layer magnetic among the claim 1-4, it is characterized in that: said hearth electrode and top electrode are platinum electrode or gold electrode.
6. according to the resistance-variable storing device of each described adjustable dielectric layer magnetic among the claim 1-5, it is characterized in that:, realize magnetic regulation and control said resistance-variable storing device through regulating and control the resistance change of said resistance-variable storing device.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161616A (en) * | 2015-09-21 | 2015-12-16 | 山西师范大学 | Multi-resistance state memristor regulated together by electric field and magnetic field and manufacturing method thereof |
| CN106684241A (en) * | 2016-12-23 | 2017-05-17 | 青岛大学 | Electric field controlled magnetic device and method based on oxygen ion movement |
| CN107331771A (en) * | 2017-06-28 | 2017-11-07 | 山西师范大学 | A kind of low energy consumption, multi-functional Multilayered Nanowires resistance-variable storing device |
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| CN101192648A (en) * | 2006-11-28 | 2008-06-04 | 三星电子株式会社 | Resistive random access memory and method of manufacturing the same |
| US7400006B1 (en) * | 2002-08-02 | 2008-07-15 | Unity Semiconductor Corporation | Conductive memory device with conductive oxide electrodes |
| CN101533890A (en) * | 2009-04-03 | 2009-09-16 | 中国科学院上海硅酸盐研究所 | Transparent RRAM component with zinc oxide based homogeneous structure and manufacture method thereof |
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| US7400006B1 (en) * | 2002-08-02 | 2008-07-15 | Unity Semiconductor Corporation | Conductive memory device with conductive oxide electrodes |
| CN101192648A (en) * | 2006-11-28 | 2008-06-04 | 三星电子株式会社 | Resistive random access memory and method of manufacturing the same |
| CN101162759A (en) * | 2007-11-02 | 2008-04-16 | 北京大学 | Memory cell of nitridation titanium/zinc oxide resistor type stochastic memory and preparation method |
| CN102282673A (en) * | 2008-11-13 | 2011-12-14 | 韩国科学技术院 | Transparent memory for transparent electronic device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161616A (en) * | 2015-09-21 | 2015-12-16 | 山西师范大学 | Multi-resistance state memristor regulated together by electric field and magnetic field and manufacturing method thereof |
| CN105161616B (en) * | 2015-09-21 | 2017-10-31 | 山西师范大学 | Many resistance state memristors that a kind of electric field and magnetic field regulate and control jointly and preparation method thereof |
| CN106684241A (en) * | 2016-12-23 | 2017-05-17 | 青岛大学 | Electric field controlled magnetic device and method based on oxygen ion movement |
| CN106684241B (en) * | 2016-12-23 | 2019-12-10 | 青岛大学 | Electric field regulation and control magnetic device and method based on oxygen ion movement |
| CN107331771A (en) * | 2017-06-28 | 2017-11-07 | 山西师范大学 | A kind of low energy consumption, multi-functional Multilayered Nanowires resistance-variable storing device |
| CN107331771B (en) * | 2017-06-28 | 2019-11-26 | 山西师范大学 | A kind of low energy consumption, multi-functional Multilayered Nanowires resistance-variable storing device |
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