AU2008254968A1 - Protection layer for fabricating a solar cell - Google Patents
Protection layer for fabricating a solar cell Download PDFInfo
- Publication number
- AU2008254968A1 AU2008254968A1 AU2008254968A AU2008254968A AU2008254968A1 AU 2008254968 A1 AU2008254968 A1 AU 2008254968A1 AU 2008254968 A AU2008254968 A AU 2008254968A AU 2008254968 A AU2008254968 A AU 2008254968A AU 2008254968 A1 AU2008254968 A1 AU 2008254968A1
- Authority
- AU
- Australia
- Prior art keywords
- protection layer
- vapor deposition
- substrate
- layer
- arc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 54
- 239000006117 anti-reflective coating Substances 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- -1 but not limited to Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- LUMVCLJFHCTMCV-UHFFFAOYSA-M potassium;hydroxide;hydrate Chemical compound O.[OH-].[K+] LUMVCLJFHCTMCV-UHFFFAOYSA-M 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
- H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93080007P | 2007-05-17 | 2007-05-17 | |
| US60/930,800 | 2007-05-17 | ||
| US12/106,561 | 2008-04-21 | ||
| US12/106,561 US7670638B2 (en) | 2007-05-17 | 2008-04-21 | Protection layer for fabricating a solar cell |
| PCT/US2008/006165 WO2008143885A2 (en) | 2007-05-17 | 2008-05-13 | Protection layer for fabricating a solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2008254968A1 true AU2008254968A1 (en) | 2008-11-27 |
Family
ID=40026447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2008254968A Abandoned AU2008254968A1 (en) | 2007-05-17 | 2008-05-13 | Protection layer for fabricating a solar cell |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7670638B2 (https=) |
| EP (1) | EP2158613A4 (https=) |
| JP (1) | JP2010527514A (https=) |
| KR (1) | KR20100019522A (https=) |
| CN (1) | CN101681944A (https=) |
| AU (1) | AU2008254968A1 (https=) |
| WO (1) | WO2008143885A2 (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9064999B2 (en) | 2009-09-07 | 2015-06-23 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| CN102044579B (zh) | 2009-09-07 | 2013-12-18 | Lg电子株式会社 | 太阳能电池 |
| WO2011087878A2 (en) * | 2010-01-18 | 2011-07-21 | Applied Materials, Inc. | Manufacture of thin film solar cells with high conversion efficiency |
| JP2011253987A (ja) | 2010-06-03 | 2011-12-15 | Mitsubishi Electric Corp | 半導体受光素子及び光モジュール |
| CN103311320B (zh) * | 2012-03-14 | 2016-12-14 | 江苏新源动力有限公司 | 太阳能电池用透明导电薄膜及其制备方法 |
| CN102800716B (zh) | 2012-07-09 | 2015-06-17 | 友达光电股份有限公司 | 太阳能电池及其制作方法 |
| CN102779866B (zh) * | 2012-08-17 | 2014-12-24 | 天津中环半导体股份有限公司 | 一种深孔交错背接触太阳能电池结构及其制造方法 |
| US9018516B2 (en) | 2012-12-19 | 2015-04-28 | Sunpower Corporation | Solar cell with silicon oxynitride dielectric layer |
| TWI484647B (zh) * | 2013-02-08 | 2015-05-11 | Motech Ind Inc | 太陽能電池及其模組 |
| TWI612682B (zh) * | 2013-12-10 | 2018-01-21 | 太陽電子公司 | 具氮氧化矽介電層之太陽能電池 |
| CN105226110B (zh) * | 2014-06-26 | 2017-02-15 | 英稳达科技股份有限公司 | 一种太阳能电池元件 |
| CN105489667B (zh) * | 2016-02-23 | 2018-01-02 | 深圳市创益科技发展有限公司 | 一种用背接触式太阳能电池加工制成小芯片的电极引出方法 |
| FR3050870B1 (fr) * | 2016-04-28 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d’un dispositif de detection de rayonnement electromagnetique comportant une couche en un materiau getter |
| USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
| US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
| USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
| USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
| USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
| USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
| USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
| USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
| USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
| USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
| USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945065A (en) | 1988-06-02 | 1990-07-31 | Mobil Solar Energy Corporation | Method of passivating crystalline substrates |
| US4927770A (en) | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
| US5053083A (en) | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
| US5360491A (en) * | 1993-04-07 | 1994-11-01 | The United States Of America As Represented By The United States Department Of Energy | β-silicon carbide protective coating and method for fabricating same |
| US5871591A (en) * | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
| JP3796069B2 (ja) | 1999-07-15 | 2006-07-12 | 三洋電機株式会社 | 太陽電池モジュール |
| JP2004039751A (ja) | 2002-07-01 | 2004-02-05 | Toyota Motor Corp | 光起電力素子 |
| US7402448B2 (en) * | 2003-01-31 | 2008-07-22 | Bp Corporation North America Inc. | Photovoltaic cell and production thereof |
| US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US7339110B1 (en) | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
| US7354631B2 (en) * | 2003-11-06 | 2008-04-08 | Micron Technology, Inc. | Chemical vapor deposition apparatus and methods |
| DE102005004410B4 (de) * | 2005-01-31 | 2010-09-16 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Ausbilden einer Halbleiterstruktur mit Bemustern einer Schicht aus einem Material |
| US7554031B2 (en) * | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
-
2008
- 2008-04-21 US US12/106,561 patent/US7670638B2/en active Active
- 2008-05-13 JP JP2010508414A patent/JP2010527514A/ja not_active Abandoned
- 2008-05-13 AU AU2008254968A patent/AU2008254968A1/en not_active Abandoned
- 2008-05-13 CN CN200880015716A patent/CN101681944A/zh active Pending
- 2008-05-13 EP EP08754454A patent/EP2158613A4/en not_active Withdrawn
- 2008-05-13 KR KR1020097026224A patent/KR20100019522A/ko not_active Withdrawn
- 2008-05-13 WO PCT/US2008/006165 patent/WO2008143885A2/en not_active Ceased
-
2010
- 2010-01-14 US US12/687,810 patent/US20100129955A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP2158613A4 (en) | 2012-07-18 |
| US7670638B2 (en) | 2010-03-02 |
| EP2158613A2 (en) | 2010-03-03 |
| US20100129955A1 (en) | 2010-05-27 |
| WO2008143885A3 (en) | 2009-02-05 |
| WO2008143885A2 (en) | 2008-11-27 |
| KR20100019522A (ko) | 2010-02-18 |
| US20080283490A1 (en) | 2008-11-20 |
| JP2010527514A (ja) | 2010-08-12 |
| CN101681944A (zh) | 2010-03-24 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MK1 | Application lapsed section 142(2)(a) - no request for examination in relevant period |