AU2003230597A1 - Heterojunction bipolar transistor having thinned base-collector depletion region - Google Patents

Heterojunction bipolar transistor having thinned base-collector depletion region

Info

Publication number
AU2003230597A1
AU2003230597A1 AU2003230597A AU2003230597A AU2003230597A1 AU 2003230597 A1 AU2003230597 A1 AU 2003230597A1 AU 2003230597 A AU2003230597 A AU 2003230597A AU 2003230597 A AU2003230597 A AU 2003230597A AU 2003230597 A1 AU2003230597 A1 AU 2003230597A1
Authority
AU
Australia
Prior art keywords
bipolar transistor
depletion region
heterojunction bipolar
collector depletion
thinned base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003230597A
Other versions
AU2003230597A8 (en
Inventor
Eric S. Harmon
David B. Salzman
Jerry M. Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yale University
Original Assignee
Yale University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yale University filed Critical Yale University
Publication of AU2003230597A8 publication Critical patent/AU2003230597A8/en
Publication of AU2003230597A1 publication Critical patent/AU2003230597A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
AU2003230597A 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region Abandoned AU2003230597A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36182302P 2002-03-04 2002-03-04
US60/361,823 2002-03-04
PCT/US2003/006660 WO2003077284A2 (en) 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region

Publications (2)

Publication Number Publication Date
AU2003230597A8 AU2003230597A8 (en) 2003-09-22
AU2003230597A1 true AU2003230597A1 (en) 2003-09-22

Family

ID=27805082

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2003230597A Abandoned AU2003230597A1 (en) 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region
AU2003225650A Abandoned AU2003225650A1 (en) 2002-03-04 2003-03-04 Drift-dominated detector

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2003225650A Abandoned AU2003225650A1 (en) 2002-03-04 2003-03-04 Drift-dominated detector

Country Status (2)

Country Link
AU (2) AU2003230597A1 (en)
WO (2) WO2003077284A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010026576A2 (en) * 2008-09-02 2010-03-11 Gady Golan Photoelectric structure and method of manufacturing thereof
CN102064187B (en) * 2009-11-11 2013-02-13 中国科学院半导体研究所 Silicon carbide consubstantial PIN (Personal Identification Number) microstructure material and preparation method thereof
CN105261639B (en) * 2014-07-18 2019-02-26 稳懋半导体股份有限公司 Heteroj unction bipolar transistor
CN107104172B (en) * 2017-06-17 2019-09-20 东莞市天域半导体科技有限公司 A kind of preparation method of SiC avalanche photodide device epitaxial material
CN110797429B (en) * 2019-11-08 2021-02-02 中国科学院长春光学精密机械与物理研究所 Stress-controlled gallium nitride-based infrared-ultraviolet double-color light detector and preparation method thereof
CN113161415A (en) * 2020-01-22 2021-07-23 全新光电科技股份有限公司 Heterojunction bipolar transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436468A (en) * 1992-03-17 1995-07-25 Fujitsu Limited Ordered mixed crystal semiconductor superlattice device
US6159816A (en) * 1994-08-09 2000-12-12 Triquint Semiconductor Texas, Inc. Method of fabricating a bipolar transistor
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
JP2002016076A (en) * 2000-06-27 2002-01-18 Nec Corp Heterojunction bipolar transistor and its manufacturing method
US6448582B1 (en) * 2000-09-21 2002-09-10 Yale University High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
WO2002043155A2 (en) * 2000-11-27 2002-05-30 Kopin Corporation Bipolar transistor with lattice matched base layer

Also Published As

Publication number Publication date
WO2003077283A3 (en) 2003-12-24
WO2003077283A2 (en) 2003-09-18
AU2003225650A8 (en) 2003-09-22
AU2003225650A1 (en) 2003-09-22
AU2003230597A8 (en) 2003-09-22
WO2003077284A2 (en) 2003-09-18
WO2003077284A3 (en) 2003-12-04

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase