SG111189A1 - Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact - Google Patents
Heterojunction bipolar transistor with self-aligned emitter and sidewall base contactInfo
- Publication number
- SG111189A1 SG111189A1 SG200404413A SG200404413A SG111189A1 SG 111189 A1 SG111189 A1 SG 111189A1 SG 200404413 A SG200404413 A SG 200404413A SG 200404413 A SG200404413 A SG 200404413A SG 111189 A1 SG111189 A1 SG 111189A1
- Authority
- SG
- Singapore
- Prior art keywords
- self
- bipolar transistor
- base contact
- heterojunction bipolar
- sidewall base
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/683,142 US6924202B2 (en) | 2003-10-09 | 2003-10-09 | Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG111189A1 true SG111189A1 (en) | 2005-05-30 |
Family
ID=34422669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200404413A SG111189A1 (en) | 2003-10-09 | 2004-08-10 | Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6924202B2 (en) |
| SG (1) | SG111189A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049240B2 (en) * | 2003-11-10 | 2006-05-23 | United Microelectronics Corp. | Formation method of SiGe HBT |
| US8064493B2 (en) * | 2009-06-12 | 2011-11-22 | Binoptics Corporation | Surface emitting photonic device |
| EP2418681B1 (en) * | 2010-08-10 | 2017-10-11 | Nxp B.V. | Heterojunction Bipolar Transistor and Manufacturing Method |
| US8501572B2 (en) * | 2010-09-02 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer structure for transistor device and method of manufacturing same |
| FR2999799A1 (en) | 2012-12-19 | 2014-06-20 | St Microelectronics Sa | BIPOLAR TRANSISTOR WITH HETEROJUNCTION |
| US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
| US9825157B1 (en) * | 2016-06-29 | 2017-11-21 | Globalfoundries Inc. | Heterojunction bipolar transistor with stress component |
| US10510685B2 (en) * | 2017-09-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dishing prevention columns for bipolar junction transistors |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0785476B2 (en) * | 1991-06-14 | 1995-09-13 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Emitter-embedded bipolar transistor structure |
| EP0535350B1 (en) * | 1991-09-23 | 1998-04-08 | Siemens Aktiengesellschaft | Process for the manufacture of a side-limited monocrystalline region in a bipolar transistor |
| KR100233834B1 (en) * | 1996-12-09 | 1999-12-01 | 한흥섭 | Method for manufacturing si/sige bipolar transistor |
| US5773350A (en) * | 1997-01-28 | 1998-06-30 | National Semiconductor Corporation | Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base |
| US6169007B1 (en) * | 1999-06-25 | 2001-01-02 | Applied Micro Circuits Corporation | Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback |
| US6664574B2 (en) * | 2001-09-05 | 2003-12-16 | Semiconductor Components Industries Llc | Heterojunction semiconductor device and method of manufacturing |
| US6861323B2 (en) * | 2003-02-21 | 2005-03-01 | Micrel, Inc. | Method for forming a SiGe heterojunction bipolar transistor having reduced base resistance |
-
2003
- 2003-10-09 US US10/683,142 patent/US6924202B2/en not_active Expired - Lifetime
-
2004
- 2004-08-10 SG SG200404413A patent/SG111189A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US6924202B2 (en) | 2005-08-02 |
| US20050079658A1 (en) | 2005-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2003294869A1 (en) | Bipolar transistor with an improved base emitter junction and method for the production thereof | |
| SG111192A1 (en) | Heterojunction bipolar transistor using reverse emitter window | |
| AU2002219895A1 (en) | Bipolar transistor with lattice matched base layer | |
| EP1658639A4 (en) | Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same | |
| DE60042045D1 (en) | Heterojunction bipolar transistors and corresponding manufacturing methods | |
| DE60131811D1 (en) | heterojunction bipolar transistor | |
| DE60123309D1 (en) | High-frequency amplifier with a bipolar transistor | |
| GB0224871D0 (en) | Self-aligned doping of source-drain contacts | |
| AU2002303301A1 (en) | Bipolar transistors and high electron mobility transistors | |
| WO2005101528A3 (en) | Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area | |
| TW200633187A (en) | Bipolar device compatible with CMOS process technology | |
| WO2005074549A3 (en) | Bipolar junction transistor geometry | |
| AU2001230964A1 (en) | Silicon-carbon layer in emitter for silicon-germanium heterojunction bipolar transistors | |
| EP1684356A3 (en) | Bipolar junction transistor | |
| HK1083041A1 (en) | Method for fabricating a self-aligned bipolar transistor and related structure | |
| EP1662557A4 (en) | Heterojunction bipolar transistor | |
| SG111189A1 (en) | Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact | |
| AU2003222634A8 (en) | Self-aligned magnetic tunneling junction and via contact | |
| WO2007036793A3 (en) | Power mosfets and methods of making same | |
| WO2007055985A3 (en) | METHOD AND SYSTEM FOR PROVIDING A HETEROJUNCTION BIPOLAR TRANSISTOR HAVING SiGe EXTENSIONS | |
| AU2003230597A8 (en) | Heterojunction bipolar transistor having thinned base-collector depletion region | |
| FR2858877B1 (en) | BIPOLAR TRANSISTOR WITH HETEROJUNCTION | |
| AU2003223423A1 (en) | Bipolar transistor with graded base layer | |
| AU2003268312A1 (en) | High gain bipolar transistor | |
| GB2402810B (en) | Heterojunction bipolar transistors |