AU2003216906A1 - Method for the deposition of transparent conducting layers by means of sputter gas comprising helium - Google Patents

Method for the deposition of transparent conducting layers by means of sputter gas comprising helium

Info

Publication number
AU2003216906A1
AU2003216906A1 AU2003216906A AU2003216906A AU2003216906A1 AU 2003216906 A1 AU2003216906 A1 AU 2003216906A1 AU 2003216906 A AU2003216906 A AU 2003216906A AU 2003216906 A AU2003216906 A AU 2003216906A AU 2003216906 A1 AU2003216906 A1 AU 2003216906A1
Authority
AU
Australia
Prior art keywords
helium
deposition
transparent conducting
conducting layers
sputter gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003216906A
Other languages
English (en)
Inventor
Manuela Egel
Klaus Goedicke
Torsten Winkler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of AU2003216906A1 publication Critical patent/AU2003216906A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
AU2003216906A 2002-06-05 2003-03-31 Method for the deposition of transparent conducting layers by means of sputter gas comprising helium Abandoned AU2003216906A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2002124990 DE10224990B3 (de) 2002-06-05 2002-06-05 Verfahren zur Abscheidung transparenter leitfähiger Schichten
DE10224990.3 2002-06-05
PCT/EP2003/003346 WO2003104518A1 (de) 2002-06-05 2003-03-31 Verfahren zur abscheidung transparenter leitfähiger schichten mittels helium-haltigem sputtergas

Publications (1)

Publication Number Publication Date
AU2003216906A1 true AU2003216906A1 (en) 2003-12-22

Family

ID=29723083

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003216906A Abandoned AU2003216906A1 (en) 2002-06-05 2003-03-31 Method for the deposition of transparent conducting layers by means of sputter gas comprising helium

Country Status (3)

Country Link
AU (1) AU2003216906A1 (de)
DE (1) DE10224990B3 (de)
WO (1) WO2003104518A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103343327A (zh) * 2013-07-01 2013-10-09 上海理工大学 制备非晶态透明氧化锌薄膜的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2936276B2 (ja) * 1990-02-27 1999-08-23 日本真空技術株式会社 透明導電膜の製造方法およびその製造装置
AT395019B (de) * 1990-04-05 1992-08-25 Avl Verbrennungskraft Messtech Verfahren zur herstellung einer duennen nitridoder oxidschicht auf einer oberflaeche
DE59203417D1 (de) * 1991-04-05 1995-10-05 Balzers Hochvakuum Verfahren zur Beschichtung eines Werkstückes aus Kunststoff mit einer Metallschicht.
US5135581A (en) * 1991-04-08 1992-08-04 Minnesota Mining And Manufacturing Company Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas
JP2697567B2 (ja) * 1993-08-24 1998-01-14 株式会社島津製作所 Ｉｔｏ薄膜の作成法
US5849108A (en) * 1996-04-26 1998-12-15 Canon Kabushiki Kaisha Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
JP2001152323A (ja) * 1999-11-29 2001-06-05 Canon Inc 透明電極および光起電力素子の作製方法

Also Published As

Publication number Publication date
WO2003104518A1 (de) 2003-12-18
DE10224990B3 (de) 2004-03-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase