AU2002322561A1 - Etching process for micromachining crystalline materials and devices fabricated thereby - Google Patents

Etching process for micromachining crystalline materials and devices fabricated thereby

Info

Publication number
AU2002322561A1
AU2002322561A1 AU2002322561A AU2002322561A AU2002322561A1 AU 2002322561 A1 AU2002322561 A1 AU 2002322561A1 AU 2002322561 A AU2002322561 A AU 2002322561A AU 2002322561 A AU2002322561 A AU 2002322561A AU 2002322561 A1 AU2002322561 A1 AU 2002322561A1
Authority
AU
Australia
Prior art keywords
micromachining
etching process
crystalline materials
devices fabricated
fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002322561A
Inventor
Larry J. Rasnake
Dan A. Steinberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Haleos Inc
Original Assignee
Haleos Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/071,261 external-priority patent/US6885786B2/en
Application filed by Haleos Inc filed Critical Haleos Inc
Publication of AU2002322561A1 publication Critical patent/AU2002322561A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4234—Passive alignment along the optical axis and active alignment perpendicular to the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
AU2002322561A 2001-07-19 2002-07-19 Etching process for micromachining crystalline materials and devices fabricated thereby Abandoned AU2002322561A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US30656801P 2001-07-19 2001-07-19
US60/306,568 2001-07-19
US10/071,261 US6885786B2 (en) 2001-02-07 2002-02-07 Combined wet and dry etching process for micromachining of crystalline materials
US10/071,261 2002-02-07
PCT/US2002/023177 WO2003008139A2 (en) 2001-07-19 2002-07-19 Etching process for micromachining crystalline materials and devices fabricated thereby

Publications (1)

Publication Number Publication Date
AU2002322561A1 true AU2002322561A1 (en) 2003-03-03

Family

ID=26752026

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002322561A Abandoned AU2002322561A1 (en) 2001-07-19 2002-07-19 Etching process for micromachining crystalline materials and devices fabricated thereby

Country Status (6)

Country Link
EP (1) EP1414609A4 (en)
JP (1) JP2004535304A (en)
KR (1) KR20040017339A (en)
CN (1) CN1545732A (en)
AU (1) AU2002322561A1 (en)
WO (1) WO2003008139A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6885786B2 (en) 2001-02-07 2005-04-26 Shipley Company, L.L.C. Combined wet and dry etching process for micromachining of crystalline materials
US6907150B2 (en) 2001-02-07 2005-06-14 Shipley Company, L.L.C. Etching process for micromachining crystalline materials and devices fabricated thereby

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706061A (en) * 1986-08-28 1987-11-10 Honeywell Inc. Composition sensor with minimal non-linear thermal gradients
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
DE58909602D1 (en) * 1989-09-22 1996-03-21 Siemens Ag Process for anisotropic etching of silicon
US5605598A (en) * 1990-10-17 1997-02-25 The Charles Stark Draper Laboratory Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency
JP3205103B2 (en) * 1993-01-07 2001-09-04 松下電器産業株式会社 Method for manufacturing semiconductor device
US6020272A (en) * 1998-10-08 2000-02-01 Sandia Corporation Method for forming suspended micromechanical structures
US6215946B1 (en) * 2000-03-16 2001-04-10 Act Microdevices, Inc. V-groove chip with wick-stop trench for improved fiber positioning

Also Published As

Publication number Publication date
EP1414609A4 (en) 2012-03-28
JP2004535304A (en) 2004-11-25
WO2003008139A3 (en) 2003-11-27
KR20040017339A (en) 2004-02-26
CN1545732A (en) 2004-11-10
EP1414609A2 (en) 2004-05-06
WO2003008139A2 (en) 2003-01-30

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase