AU2002254687A1 - Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks - Google Patents

Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks

Info

Publication number
AU2002254687A1
AU2002254687A1 AU2002254687A AU2002254687A AU2002254687A1 AU 2002254687 A1 AU2002254687 A1 AU 2002254687A1 AU 2002254687 A AU2002254687 A AU 2002254687A AU 2002254687 A AU2002254687 A AU 2002254687A AU 2002254687 A1 AU2002254687 A1 AU 2002254687A1
Authority
AU
Australia
Prior art keywords
ion
phase shift
deposition process
beam deposition
attenuated phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002254687A
Other languages
English (en)
Inventor
Peter Francis Carcia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of AU2002254687A1 publication Critical patent/AU2002254687A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
AU2002254687A 2001-04-19 2002-04-19 Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks Abandoned AU2002254687A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28478001P 2001-04-19 2001-04-19
US60/284,780 2001-04-19
PCT/US2002/012540 WO2002086620A2 (en) 2001-04-19 2002-04-19 Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks

Publications (1)

Publication Number Publication Date
AU2002254687A1 true AU2002254687A1 (en) 2002-11-05

Family

ID=23091503

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002254687A Abandoned AU2002254687A1 (en) 2001-04-19 2002-04-19 Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks

Country Status (8)

Country Link
US (1) US6756160B2 (enExample)
EP (1) EP1395876A2 (enExample)
JP (1) JP2004529386A (enExample)
KR (1) KR20040030590A (enExample)
CN (1) CN1516826A (enExample)
AU (1) AU2002254687A1 (enExample)
TW (1) TW593708B (enExample)
WO (1) WO2002086620A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040115537A1 (en) * 2002-04-19 2004-06-17 Carcia Peter Francis Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks
US20040115343A1 (en) * 2002-04-19 2004-06-17 Carcia Peter Francis Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
US20040005416A1 (en) * 2002-07-03 2004-01-08 Cosmos Vacuum Technology Corporation Method for making an anti-reflection coating on a substrate for the production of a polarizer
US7300556B2 (en) * 2003-08-29 2007-11-27 Hitachi Global Storage Technologies Netherlands B.V. Method for depositing a thin film adhesion layer
KR20060120613A (ko) * 2003-09-05 2006-11-27 쇼오트 아게 감쇄 위상 편이 마스크 블랭크 및 포토 마스크
JP2008216587A (ja) * 2007-03-02 2008-09-18 Canon Inc Ｓｉ酸化膜の形成方法、配向膜および液晶光学装置
JP5779317B2 (ja) * 2009-12-24 2015-09-16 イーエイチエス レンズ フィリピン インク 光学物品の製造方法
US20160022300A1 (en) * 2011-02-01 2016-01-28 Korea University Research And Business Foundation Spinning nanowires and method for inducing cell eradication using the same
CN102230179B (zh) * 2011-06-22 2013-01-02 清华大学 一种制备金属纳米条纹的方法
US20130302512A1 (en) * 2012-05-09 2013-11-14 Amedica Corporation Methods for altering the surface chemistry of biomedical implants and related apparatus
US9925295B2 (en) 2012-05-09 2018-03-27 Amedica Corporation Ceramic and/or glass materials and related methods
JP5564089B2 (ja) * 2012-10-22 2014-07-30 パナソニック株式会社 赤外線光学フィルタおよびその製造方法
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
CN106222623A (zh) * 2016-08-31 2016-12-14 北京埃德万斯离子束技术研究所股份有限公司 氮化物半导体薄膜及制备方法
CN106282917B (zh) * 2016-08-31 2018-04-27 北京埃德万斯离子束技术研究所股份有限公司 氮化镓基发光二极管及制备方法
CN112095082A (zh) * 2020-09-10 2020-12-18 天津津航技术物理研究所 一种变折射率氧化物薄膜的制备方法
JP2023108276A (ja) * 2022-01-25 2023-08-04 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び表示装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890309A (en) 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
JP2744069B2 (ja) 1989-06-06 1998-04-28 三洋電機株式会社 薄膜の形成方法
GB9519546D0 (en) * 1995-09-25 1995-11-29 Gec Marconi Avionics Holdings Depositing optical coatings
US5897977A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
JPH11184067A (ja) * 1997-12-19 1999-07-09 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
US6274280B1 (en) 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks
US6653027B2 (en) * 2001-02-26 2003-11-25 International Business Machines Corporation Attenuated embedded phase shift photomask blanks

Also Published As

Publication number Publication date
JP2004529386A (ja) 2004-09-24
EP1395876A2 (en) 2004-03-10
CN1516826A (zh) 2004-07-28
KR20040030590A (ko) 2004-04-09
US6756160B2 (en) 2004-06-29
WO2002086620A2 (en) 2002-10-31
WO2002086620A3 (en) 2003-09-12
TW593708B (en) 2004-06-21
US20020187405A1 (en) 2002-12-12

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase