AU2001293221A1 - Method for making micromechanical structures having at least one lateral, small gap therebetween and micromechanical device produced thereby - Google Patents
Method for making micromechanical structures having at least one lateral, small gap therebetween and micromechanical device produced therebyInfo
- Publication number
- AU2001293221A1 AU2001293221A1 AU2001293221A AU9322101A AU2001293221A1 AU 2001293221 A1 AU2001293221 A1 AU 2001293221A1 AU 2001293221 A AU2001293221 A AU 2001293221A AU 9322101 A AU9322101 A AU 9322101A AU 2001293221 A1 AU2001293221 A1 AU 2001293221A1
- Authority
- AU
- Australia
- Prior art keywords
- micromechanical
- lateral
- gap therebetween
- small gap
- device produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0019—Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/013—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02338—Suspension means
- H03H9/02362—Folded-flexure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2436—Disk resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/462—Microelectro-mechanical filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/48—Coupling means therefor
- H03H9/50—Mechanical coupling means
- H03H9/505—Mechanical coupling means for microelectro-mechanical filters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0307—Anchors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Geometry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22750700P | 2000-08-24 | 2000-08-24 | |
US60/227,507 | 2000-08-24 | ||
PCT/US2001/041874 WO2002016256A2 (fr) | 2000-08-24 | 2001-08-24 | Procede servant a fabriquer des structures micromecaniques possedant au moins un espace intermediaire limite et dispositif micromecanique fabrique au moyen de ce procede |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001293221A1 true AU2001293221A1 (en) | 2002-03-04 |
Family
ID=22853357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001293221A Abandoned AU2001293221A1 (en) | 2000-08-24 | 2001-08-24 | Method for making micromechanical structures having at least one lateral, small gap therebetween and micromechanical device produced thereby |
Country Status (4)
Country | Link |
---|---|
US (2) | US20020070816A1 (fr) |
EP (1) | EP1311455A2 (fr) |
AU (1) | AU2001293221A1 (fr) |
WO (1) | WO2002016256A2 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003213570A1 (en) | 2002-02-26 | 2003-09-09 | The Regents Of The University Of Michigan | Mems-based, computer systems, clock generation and oscillator circuits and lc-tank apparatus for use therein |
US7172917B2 (en) * | 2003-04-17 | 2007-02-06 | Robert Bosch Gmbh | Method of making a nanogap for variable capacitive elements, and device having a nanogap |
JP4086023B2 (ja) * | 2003-12-04 | 2008-05-14 | セイコーエプソン株式会社 | マイクロメカニカル静電振動子 |
US7551043B2 (en) * | 2005-08-29 | 2009-06-23 | The Regents Of The University Of Michigan | Micromechanical structures having a capacitive transducer gap filled with a dielectric and method of making same |
US7816166B1 (en) | 2007-03-09 | 2010-10-19 | Silicon Labs Sc, Inc. | Method to form a MEMS structure having a suspended portion |
US7514760B1 (en) | 2007-03-09 | 2009-04-07 | Silicon Clocks, Inc. | IC-compatible MEMS structure |
US7858422B1 (en) | 2007-03-09 | 2010-12-28 | Silicon Labs Sc, Inc. | MEMS coupler and method to form the same |
US20090315644A1 (en) * | 2008-06-19 | 2009-12-24 | Honeywell International Inc. | High-q disk nano resonator device and method of fabricating the same |
TWI434803B (zh) | 2010-06-30 | 2014-04-21 | Ind Tech Res Inst | 微機電元件與電路晶片之整合裝置及其製造方法 |
CN108883927B (zh) * | 2016-02-29 | 2023-06-13 | 密歇根大学董事会 | 制造三维微结构器件的方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5082242A (en) | 1989-12-27 | 1992-01-21 | Ulrich Bonne | Electronic microvalve apparatus and fabrication |
US5620931A (en) * | 1990-08-17 | 1997-04-15 | Analog Devices, Inc. | Methods for fabricating monolithic device containing circuitry and suspended microstructure |
US5491604A (en) | 1992-12-11 | 1996-02-13 | The Regents Of The University Of California | Q-controlled microresonators and tunable electronic filters using such resonators |
WO1994014240A1 (fr) | 1992-12-11 | 1994-06-23 | The Regents Of The University Of California | Processeurs de signal a elements microelectromecaniques |
US5839062A (en) | 1994-03-18 | 1998-11-17 | The Regents Of The University Of California | Mixing, modulation and demodulation via electromechanical resonators |
US5640133A (en) | 1995-06-23 | 1997-06-17 | Cornell Research Foundation, Inc. | Capacitance based tunable micromechanical resonators |
US5914553A (en) | 1997-06-16 | 1999-06-22 | Cornell Research Foundation, Inc. | Multistable tunable micromechanical resonators |
US6167757B1 (en) | 1997-09-08 | 2001-01-02 | The Regents Of The University Of Michigan | Single-side microelectromechanical capacitive accelerometer and method of making same |
JP3147048B2 (ja) | 1997-09-12 | 2001-03-19 | 日本電気株式会社 | 半導体装置 |
JP3003670B2 (ja) | 1998-05-25 | 2000-01-31 | 日本電気株式会社 | マイクロアクチュエータとその製造方法 |
FI108583B (fi) | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
US6249073B1 (en) | 1999-01-14 | 2001-06-19 | The Regents Of The University Of Michigan | Device including a micromechanical resonator having an operating frequency and method of extending same |
EP1173893A4 (fr) | 1999-01-15 | 2007-08-01 | Univ California | Films de polysilicium-germanium permettant de realiser des systemes micro-electromecaniques |
US6347237B1 (en) * | 1999-03-16 | 2002-02-12 | Superconductor Technologies, Inc. | High temperature superconductor tunable filter |
US6305779B1 (en) | 1999-04-09 | 2001-10-23 | Eastman Kodak Company | MEMS inkjet nozzle cleaning and closing mechanism |
US6429034B1 (en) * | 1999-12-16 | 2002-08-06 | Corning Incorporated | Method of making high aspect ratio features during surface micromachining |
US6393913B1 (en) | 2000-02-08 | 2002-05-28 | Sandia Corporation | Microelectromechanical dual-mass resonator structure |
-
2001
- 2001-08-23 US US09/938,411 patent/US20020070816A1/en not_active Abandoned
- 2001-08-24 WO PCT/US2001/041874 patent/WO2002016256A2/fr active Application Filing
- 2001-08-24 EP EP01973667A patent/EP1311455A2/fr not_active Withdrawn
- 2001-08-24 AU AU2001293221A patent/AU2001293221A1/en not_active Abandoned
-
2003
- 2003-07-24 US US10/625,992 patent/US6846691B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2002016256A3 (fr) | 2002-09-12 |
US20040150057A1 (en) | 2004-08-05 |
EP1311455A2 (fr) | 2003-05-21 |
US20020070816A1 (en) | 2002-06-13 |
WO2002016256A2 (fr) | 2002-02-28 |
US6846691B2 (en) | 2005-01-25 |
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