AU2001292643A1 - Power amplifier circuitry and method - Google Patents
Power amplifier circuitry and methodInfo
- Publication number
- AU2001292643A1 AU2001292643A1 AU2001292643A AU9264301A AU2001292643A1 AU 2001292643 A1 AU2001292643 A1 AU 2001292643A1 AU 2001292643 A AU2001292643 A AU 2001292643A AU 9264301 A AU9264301 A AU 9264301A AU 2001292643 A1 AU2001292643 A1 AU 2001292643A1
- Authority
- AU
- Australia
- Prior art keywords
- power amplifier
- amplifier circuitry
- circuitry
- power
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/04163—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
- Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/660,123 | 2000-09-12 | ||
US09/660,123 US6549071B1 (en) | 2000-09-12 | 2000-09-12 | Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices |
PCT/US2001/028589 WO2002023716A2 (en) | 2000-09-12 | 2001-09-11 | Power amplifier circuitry and method |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001292643A1 true AU2001292643A1 (en) | 2002-03-26 |
Family
ID=24648237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001292643A Abandoned AU2001292643A1 (en) | 2000-09-12 | 2001-09-11 | Power amplifier circuitry and method |
Country Status (6)
Country | Link |
---|---|
US (12) | US6549071B1 (en) |
EP (1) | EP1329021A2 (en) |
JP (1) | JP5230054B2 (en) |
KR (1) | KR100887427B1 (en) |
AU (1) | AU2001292643A1 (en) |
WO (1) | WO2002023716A2 (en) |
Families Citing this family (128)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6549071B1 (en) * | 2000-09-12 | 2003-04-15 | Silicon Laboratories, Inc. | Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices |
US6917245B2 (en) | 2000-09-12 | 2005-07-12 | Silicon Laboratories, Inc. | Absolute power detector |
US6701138B2 (en) * | 2001-06-11 | 2004-03-02 | Rf Micro Devices, Inc. | Power amplifier control |
US6828859B2 (en) * | 2001-08-17 | 2004-12-07 | Silicon Laboratories, Inc. | Method and apparatus for protecting devices in an RF power amplifier |
US20030058604A1 (en) * | 2001-09-13 | 2003-03-27 | Canagasaby Karthisha S. | Method and apparatus to emulate external IO interconnection |
US6765377B1 (en) * | 2002-01-09 | 2004-07-20 | Xilinx, Inc. | Q-emphasized amplifier with inductor-based bandwidth booster |
DE10250613B4 (en) * | 2002-10-30 | 2007-02-08 | Advanced Micro Devices, Inc., Sunnyvale | Integrated RF signal level detector usable for automatic power level control |
DE10250612B4 (en) * | 2002-10-30 | 2014-01-16 | Advanced Micro Devices, Inc. | Automatic power level control circuit for a transceiver |
US6894565B1 (en) | 2002-12-03 | 2005-05-17 | Silicon Laboratories, Inc. | Fast settling power amplifier regulator |
US6825559B2 (en) * | 2003-01-02 | 2004-11-30 | Cree, Inc. | Group III nitride based flip-chip intergrated circuit and method for fabricating |
US6972965B2 (en) * | 2003-02-04 | 2005-12-06 | Intel Corporation | Method for integrated high Q inductors in FCGBA packages |
US6897730B2 (en) * | 2003-03-04 | 2005-05-24 | Silicon Laboratories Inc. | Method and apparatus for controlling the output power of a power amplifier |
US7489914B2 (en) * | 2003-03-28 | 2009-02-10 | Georgia Tech Research Corporation | Multi-band RF transceiver with passive reuse in organic substrates |
EP1487100A1 (en) * | 2003-06-09 | 2004-12-15 | STMicroelectronics S.r.l. | Multi-channel power amplifier with channels independently self-configuring bridge or single-ended output, particulary for audio applications |
US6917243B2 (en) * | 2003-06-27 | 2005-07-12 | Sige Semiconductor Inc. | Integrated power amplifier circuit |
US6882220B2 (en) * | 2003-06-27 | 2005-04-19 | Sige Semiconductor Inc. | Integrated power amplifier circuit |
US6822511B1 (en) * | 2003-06-27 | 2004-11-23 | Sige Semiconductor Inc. | Integrated power amplifier circuit |
EP1496611A1 (en) * | 2003-07-09 | 2005-01-12 | STMicroelectronics S.r.l. | Multi-channel power amplifier self-configuring to a bridge or single-ended output, particularly for audio applications |
US20050026332A1 (en) * | 2003-07-29 | 2005-02-03 | Fratti Roger A. | Techniques for curvature control in power transistor devices |
US7171171B1 (en) * | 2003-08-15 | 2007-01-30 | Rf Micro Devices, Inc. | GaAs RF signal detection circuit with operational amplifier |
US7053718B2 (en) * | 2003-09-25 | 2006-05-30 | Silicon Laboratories Inc. | Stacked RF power amplifier |
US6998919B2 (en) * | 2003-10-22 | 2006-02-14 | Rf Micro Devices, Inc. | Temperature compensated power amplifier power control |
US7161427B2 (en) * | 2003-12-22 | 2007-01-09 | Silicon Laboratories Inc. | Input structure for a power amplifier and associated methods |
US7064605B2 (en) * | 2003-12-22 | 2006-06-20 | Silicon Laboratories Inc. | Circuit and method of establishing DC bias levels in an RF power amplifier |
US7113045B2 (en) * | 2003-12-22 | 2006-09-26 | Silicon Laboratories Inc. | Power amplifier input structure having a differential output |
US7522892B2 (en) * | 2003-12-22 | 2009-04-21 | Black Sand Technologies, Inc. | Power amplifier with serial interface and associated methods |
US7212070B2 (en) * | 2003-12-22 | 2007-05-01 | Silicon Laboratories Inc. | Circuit and method of reducing noise in an RF power amplifier |
US7502601B2 (en) * | 2003-12-22 | 2009-03-10 | Black Sand Technologies, Inc. | Power amplifier with digital power control and associated methods |
EP1585217B1 (en) * | 2004-04-08 | 2007-09-19 | STMicroelectronics N.V. | Process of controlling the power of the output signal of an amplifier system, and associated system |
KR101009673B1 (en) * | 2004-04-14 | 2011-01-19 | 엘지디스플레이 주식회사 | driving unit of fluorescent lamp and method for driving the same |
US7268626B2 (en) * | 2004-04-30 | 2007-09-11 | Broadcom Corporation | Compensating a power amplifier based on operational-based changes |
DE102004027809B4 (en) * | 2004-06-08 | 2006-10-26 | Infineon Technologies Ag | Frequency converter circuit and frequency converter circuit arrangement |
US7751784B2 (en) * | 2004-06-30 | 2010-07-06 | Black Sand Technologies, Inc. | Method of protecting power amplifiers |
US7751783B2 (en) * | 2004-06-30 | 2010-07-06 | Black Sand Technologies, Inc. | Power amplifier protection circuit and associated methods |
US7161423B2 (en) * | 2004-06-30 | 2007-01-09 | Silicon Laboratories Inc. | Parallel power amplifier and associated methods |
DE102004039619B3 (en) * | 2004-08-06 | 2005-08-25 | Atmel Germany Gmbh | MOS transistor circuit with active components and high breakdown voltage, distributes input signal synchronously between input connections of circuit |
KR100651395B1 (en) * | 2004-09-24 | 2006-11-29 | 삼성전자주식회사 | Power amplifier of a transmitter |
US7142053B2 (en) * | 2004-12-06 | 2006-11-28 | Skyworks Solutions, Inc. | Voltage clamp for improved transient performance of a collector voltage controlled power amplifier |
US7061279B1 (en) * | 2004-12-30 | 2006-06-13 | Broadcom Corporation | System and method for high frequency, high output swing buffers |
US7342387B1 (en) | 2005-02-24 | 2008-03-11 | National Semiconductor Corporation | System and method for providing a highly efficient wide bandwidth power supply for a power amplifier |
US7676239B1 (en) | 2005-02-24 | 2010-03-09 | National Semiconductor Corporation | System and method for providing a power controller with flat amplitude and phase response |
US7248080B1 (en) | 2005-02-24 | 2007-07-24 | National Semiconductor Corporation | Power supply switching at circuit block level to reduce integrated circuit input leakage currents |
US7539467B1 (en) | 2005-02-24 | 2009-05-26 | National Semiconductor Corporation | Low leakage IC input structures including slaved standby current shut-off and increased gain for tighter hysteresis |
US7684518B2 (en) * | 2005-04-28 | 2010-03-23 | Freescale Semiconductor, Inc. | Logic threshold acquisition circuits and methods using reversed peak detectors |
US7336127B2 (en) * | 2005-06-10 | 2008-02-26 | Rf Micro Devices, Inc. | Doherty amplifier configuration for a collector controlled power amplifier |
KR100654459B1 (en) | 2005-06-30 | 2006-12-06 | 삼성전자주식회사 | Low noise amplifier for wideband and method for amplifying rf signal using the amplifier |
US7548112B2 (en) * | 2005-07-21 | 2009-06-16 | Cree, Inc. | Switch mode power amplifier using MIS-HEMT with field plate extension |
US20070031156A1 (en) * | 2005-07-29 | 2007-02-08 | Robotham W S Jr | Amplification of TTL RF oscillator signals with digital logic and power switching technology for CO2 laser RF power supplies |
US7330071B1 (en) | 2005-10-19 | 2008-02-12 | Rf Micro Devices, Inc. | High efficiency radio frequency power amplifier having an extended dynamic range |
TWI281027B (en) * | 2005-12-02 | 2007-05-11 | Ind Tech Res Inst | Peak detector |
US7440734B1 (en) * | 2006-02-06 | 2008-10-21 | Rf Micro Devices, Inc. | Active quadrature radio frequency power detector |
KR100747113B1 (en) * | 2006-06-26 | 2007-08-09 | 한국과학기술원 | Power amplifier |
US7832647B2 (en) * | 2006-06-30 | 2010-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR100757371B1 (en) * | 2006-07-07 | 2007-09-11 | 삼성전자주식회사 | Power amplifier circuit and method for envelope modulation of high frequency signal |
US7693496B2 (en) * | 2006-09-07 | 2010-04-06 | Infineon Technologies Ag | Polar transmitter arrangement and method |
US7477105B2 (en) | 2006-09-08 | 2009-01-13 | Infineon Technologies Ag | Amplifier arrangement and method for amplifying a signal |
US8111001B2 (en) | 2007-07-17 | 2012-02-07 | Cree, Inc. | LED with integrated constant current driver |
WO2009052283A2 (en) * | 2007-10-16 | 2009-04-23 | Black Sand Technologies, Inc. | Adaptively tuned rf power amplifier |
US7760018B2 (en) * | 2007-12-31 | 2010-07-20 | Tialinx, Inc. | High-efficiency switching power amplifiers with low harmonic distortion |
US9479202B2 (en) | 2008-02-19 | 2016-10-25 | Infineon Technologies Ag | System and method for burst mode amplifier |
US8994488B2 (en) | 2008-03-12 | 2015-03-31 | Mediatek Inc. | Transformer power splitter having primary winding conductors magnetically coupled to secondary winding conductors and configured in topology including series connection and parallel connection |
US7777570B2 (en) * | 2008-03-12 | 2010-08-17 | Mediatek Inc. | Transformer power combiner having secondary winding conductors magnetically coupled to primary winding conductors and configured in topology including series connection and parallel connection |
US8198714B2 (en) | 2008-03-28 | 2012-06-12 | Broadcom Corporation | Method and system for configuring a transformer embedded in a multi-layer integrated circuit (IC) package |
US7852063B2 (en) * | 2008-06-04 | 2010-12-14 | Silicon Storage Technology, Inc. | Integrated power detector with temperature compensation for fully-closed loop control |
US8644776B1 (en) | 2008-08-25 | 2014-02-04 | Peregrine Semiconductor Corporation | Systems and methods for providing improved power performance in wireless communication systems |
US8022734B1 (en) | 2008-08-25 | 2011-09-20 | Peregrine Semiconductor Corporation | Low current power detection circuit providing window comparator functionality |
CN103928476A (en) * | 2008-10-03 | 2014-07-16 | 株式会社半导体能源研究所 | Display Device And Method For Manufacturing The Same |
KR20210135349A (en) | 2008-10-03 | 2021-11-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Electronic appliance |
EP2172977A1 (en) | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP5361651B2 (en) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8741702B2 (en) * | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR101259727B1 (en) | 2008-10-24 | 2013-04-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
WO2010047288A1 (en) | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductordevice |
EP2180518B1 (en) | 2008-10-24 | 2018-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
KR101667909B1 (en) | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
KR101432764B1 (en) | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
KR101671660B1 (en) | 2008-11-21 | 2016-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device, display device, and electronic device |
US8301091B2 (en) * | 2009-01-30 | 2012-10-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Power detector for multi-band network access |
WO2011010541A1 (en) | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102221207B1 (en) | 2009-09-04 | 2021-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device and method for manufacturing the same |
WO2011034012A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, light emitting device, semiconductor device, and electronic device |
KR101153568B1 (en) * | 2009-11-02 | 2012-06-11 | 삼성전기주식회사 | Multi-stage cmos power amplifier |
WO2011063330A2 (en) * | 2009-11-23 | 2011-05-26 | Hittite Microwave Corporation | Logarithmic mean-square power detector with servo control loop |
US8008146B2 (en) * | 2009-12-04 | 2011-08-30 | International Business Machines Corporation | Different thickness oxide silicon nanowire field effect transistors |
US8324973B2 (en) | 2009-12-08 | 2012-12-04 | Black Sand Technologies, Inc. | Low output impedance RF amplifier |
DE102010009984A1 (en) * | 2009-12-28 | 2011-06-30 | Rohde & Schwarz GmbH & Co. KG, 81671 | Amplifier module with a compensation element |
DE102010007451B3 (en) * | 2010-02-10 | 2011-03-17 | Siemens Aktiengesellschaft | Push-pull amplifier for amplifying input signal to output signal, has two amplifying elements, where each amplifying element has current emitting electrode and current collecting electrode |
US8445337B2 (en) | 2010-05-12 | 2013-05-21 | International Business Machines Corporation | Generation of multiple diameter nanowire field effect transistors |
US8519479B2 (en) | 2010-05-12 | 2013-08-27 | International Business Machines Corporation | Generation of multiple diameter nanowire field effect transistors |
US8420455B2 (en) | 2010-05-12 | 2013-04-16 | International Business Machines Corporation | Generation of multiple diameter nanowire field effect transistors |
US10006948B2 (en) * | 2011-02-25 | 2018-06-26 | Veris Industries, Llc | Current meter with voltage awareness |
KR101167454B1 (en) | 2011-03-28 | 2012-07-26 | 숭실대학교산학협력단 | Power amplifier using differential structure |
JP5838650B2 (en) * | 2011-08-16 | 2016-01-06 | 株式会社ソシオネクスト | Output circuit |
JP2013084333A (en) | 2011-09-28 | 2013-05-09 | Semiconductor Energy Lab Co Ltd | Shift register circuit |
KR101897165B1 (en) | 2012-04-17 | 2018-10-23 | 삼성전자주식회사 | Apparatus and method for balanced power amplifing |
EP2713507B1 (en) * | 2012-10-01 | 2014-12-10 | Nxp B.V. | FET RF power detector |
US9035194B2 (en) * | 2012-10-30 | 2015-05-19 | Intel Corporation | Circuit board with integrated passive devices |
US20140167900A1 (en) | 2012-12-14 | 2014-06-19 | Gregorio R. Murtagian | Surface-mount inductor structures for forming one or more inductors with substrate traces |
US8872587B2 (en) * | 2013-03-06 | 2014-10-28 | International Business Machines Corporation | Generating negative impedance compensation |
CN103281039B (en) * | 2013-04-15 | 2016-04-27 | 北京大学 | A kind of Time delay control that adopts is released the difference E power-like amplifier of branch road |
US9407150B2 (en) * | 2013-09-06 | 2016-08-02 | Raytheon Company | High efficiency zero-voltage switching (ZVS) assistance circuit for power converter |
ES2638962T3 (en) | 2013-10-16 | 2017-10-24 | Telefonaktiebolaget Lm Ericsson (Publ) | Arrangement of tunable inductors, transceiver, method and software |
HUE052115T2 (en) * | 2013-10-16 | 2021-04-28 | Ericsson Telefon Ab L M | Transceiver, receiver and communication device with switch arrangement |
CN103701417A (en) * | 2013-12-16 | 2014-04-02 | 联想(北京)有限公司 | Radio frequency amplifying circuit |
US9654066B2 (en) * | 2014-04-03 | 2017-05-16 | Marvell World Trade Ltd. | Common-source power amplifiers |
US9385669B2 (en) * | 2014-06-23 | 2016-07-05 | Texas Instruments Incorporated | Class-E outphasing power amplifier with efficiency and output power enhancement circuits and method |
US9634610B2 (en) * | 2014-10-03 | 2017-04-25 | Short Circut Technologies LLC | 60 GHz wideband class E/F2 power amplifier |
US9515014B2 (en) | 2014-10-08 | 2016-12-06 | Infineon Technologies Americas Corp. | Power converter package with integrated output inductor |
DE102014118040B4 (en) * | 2014-12-05 | 2017-08-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Control circuit for a base station for transmitting energy to a receiver by means of an electrical resonant circuit, evaluation device, method and computer program |
US9473091B2 (en) * | 2015-02-12 | 2016-10-18 | Qualcomm Incorporated | Amplifier with common-mode filter |
US9543910B2 (en) | 2015-03-06 | 2017-01-10 | Apple Inc. | Radio frequency system switching power amplifier systems and methods |
US9608613B2 (en) | 2015-06-30 | 2017-03-28 | Synaptics Incorporated | Efficient high voltage square wave generator |
TWI625932B (en) | 2016-03-14 | 2018-06-01 | 美國亞德諾半導體公司 | Active linearization for broadband amplifiers |
US10199997B2 (en) | 2016-06-09 | 2019-02-05 | Qualcomm Incorporated | Source-degenerated amplification stage with rail-to-rail output swing |
DE102016113152B4 (en) * | 2016-07-18 | 2019-12-19 | Semikron Elektronik Gmbh & Co. Kg | Power electronic switching device and power semiconductor module herewith |
USD876628S1 (en) | 2016-07-20 | 2020-02-25 | Nyxoah S.A. | Medical implant |
CN109792231A (en) * | 2016-07-21 | 2019-05-21 | Lg电子株式会社 | Power conversion system |
USD988519S1 (en) | 2016-09-12 | 2023-06-06 | Nyxoah S.A. | Patch |
US10333410B2 (en) * | 2016-09-15 | 2019-06-25 | Futurewei Technologies, Inc. | Common-mode (CM) electromagnetic interference (EMI) reduction in resonant converters |
US10389312B2 (en) | 2017-01-26 | 2019-08-20 | Analog Devices, Inc. | Bias modulation active linearization for broadband amplifiers |
US10848109B2 (en) | 2017-01-26 | 2020-11-24 | Analog Devices, Inc. | Bias modulation active linearization for broadband amplifiers |
EP3589358A1 (en) | 2017-02-28 | 2020-01-08 | Nyxoah SA | Surgical implant system |
US10739424B2 (en) * | 2017-03-27 | 2020-08-11 | Waveguide Corporation | Output impedance calibration of integrated switched-mode power amplifiers |
IT201800002464A1 (en) | 2018-02-07 | 2019-08-07 | St Microelectronics Srl | ELECTRONIC CONVERTER, RELATIVE AUDIO SYSTEM, INTEGRATED CIRCUIT AND PROCEDURE FOR OPERATING AN ELECTRONIC CONVERTER |
IT201800002466A1 (en) | 2018-02-07 | 2019-08-07 | St Microelectronics Srl | INTEGRATED CIRCUIT FOR IMPLEMENTING AN AUDIO AMPLIFIER, RELATIVE AUDIO AMPLIFIER |
CN109639247B (en) * | 2018-12-12 | 2023-07-04 | 上海剑桥科技股份有限公司 | Monitoring control system and method for output power of radio frequency power amplifier |
CN115425934B (en) * | 2022-09-09 | 2023-05-09 | 佛山臻智微芯科技有限公司 | Output matching circuit of power amplifier |
Family Cites Families (128)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US618207A (en) * | 1899-01-24 | Johannes eduard lang | ||
US480907A (en) * | 1892-08-16 | James kindred | ||
US534162A (en) * | 1895-02-12 | Machine for casing an d flavoring tobacco | ||
US3891926A (en) * | 1972-12-18 | 1975-06-24 | American Standard Inc | Filter module |
JPS5853521B2 (en) * | 1974-11-15 | 1983-11-30 | ソニー株式会社 | Denryokuzo Fuku Cairo |
US4075574A (en) | 1975-10-16 | 1978-02-21 | Tektronix, Inc. | Wideband differential amplifier |
US4067057A (en) * | 1976-06-25 | 1978-01-03 | Pacific Electronic Enterprises Inc. | DC to AC switching converter |
IT7923475V0 (en) * | 1979-12-24 | 1979-12-24 | Siac Ind Accessori Cavaria Spa | LOCK WITH FUNCTIONAL ELASTIC ELEMENT FROM EJECTOR AND CURSOR RETURN SPRING, FOR BAGS, BRIEFCASES, PURSES AND SIMILAR. |
JPS57208710A (en) * | 1981-06-17 | 1982-12-21 | Pioneer Electronic Corp | Power amplifier |
US4604532A (en) | 1983-01-03 | 1986-08-05 | Analog Devices, Incorporated | Temperature compensated logarithmic circuit |
US4689819B1 (en) | 1983-12-08 | 1996-08-13 | Knowles Electronics Inc | Class D hearing aid amplifier |
US4590436A (en) | 1984-04-27 | 1986-05-20 | Gte Laboratories Incorporated | High voltage, high frequency amplifier circuit |
US4649467A (en) | 1985-07-31 | 1987-03-10 | United Technologies Corporation | High efficiency MOSFET sine wave generator |
JPS62163568A (en) * | 1986-01-14 | 1987-07-20 | Kikusui Denshi Kogyo Kk | Switching power source circuit |
US4670832A (en) * | 1986-06-12 | 1987-06-02 | General Electric Company | Resonant inverter having improved control at enablement |
US4691270A (en) * | 1986-07-22 | 1987-09-01 | Rca Corporation | Current fed inverter bridge with lossless snubbers |
JPH0682998B2 (en) | 1986-07-30 | 1994-10-19 | 日本電信電話株式会社 | Power amplifier |
US4893030A (en) | 1986-12-04 | 1990-01-09 | Western Digital Corporation | Biasing circuit for generating precise currents in an integrated circuit |
IT1213446B (en) | 1986-12-31 | 1989-12-20 | Sgs Microelettronica Spa | INTEGRATED COUPLING CIRCUIT BETWEEN A MODULATOR AND A CERAMIC FILTER FOR RECEIVERS IN AMPLITUDE MODULATION. |
JPH0783221B2 (en) * | 1987-02-16 | 1995-09-06 | 株式会社安川電機 | Power amplifier for generating magnetic attraction |
US4755766A (en) | 1987-04-22 | 1988-07-05 | Tektronix, Inc. | Differential to single-ended converter |
US4808907A (en) | 1988-05-17 | 1989-02-28 | Motorola, Inc. | Current regulator and method |
US4871978A (en) | 1988-08-10 | 1989-10-03 | Actel Corporation | High-speed static differential sense amplifier |
US4857865A (en) | 1988-11-10 | 1989-08-15 | Hughes Aircraft Company | Self equalizing multi-stage radio frequency power amplifier |
US5105164A (en) | 1989-02-28 | 1992-04-14 | At&T Bell Laboratories | High efficiency uhf linear power amplifier |
US4990803A (en) | 1989-03-27 | 1991-02-05 | Analog Devices, Inc. | Logarithmic amplifier |
US4980810A (en) | 1989-05-25 | 1990-12-25 | Hughes Aircraft Company | VHF DC-DC power supply operating at frequencies greater than 50 MHz |
JPH0377360A (en) | 1989-08-18 | 1991-04-02 | Mitsubishi Electric Corp | Semiconductor device |
US4994761A (en) * | 1989-11-06 | 1991-02-19 | Motorola Inc. | VHF power amplifier |
US5023566A (en) | 1989-12-21 | 1991-06-11 | General Electric Company | Driver for a high efficiency, high frequency Class-D power amplifier |
GB2241806B (en) * | 1990-03-09 | 1993-09-29 | Plessey Co Ltd | Improvements in true logarithmic amplifiers |
US5113147A (en) | 1990-09-26 | 1992-05-12 | Minnesota Mining And Manufacturing Company | Wide-band differential amplifier using gm-cancellation |
US5144133A (en) * | 1991-04-04 | 1992-09-01 | Texas Instruments Incorporated | Uncooled infrared detector readout monolithic integrated circuit with individual pixel signal processing |
JP2529038B2 (en) | 1991-07-19 | 1996-08-28 | 株式会社日立製作所 | High frequency and high efficiency power amplifier |
US5118997A (en) | 1991-08-16 | 1992-06-02 | General Electric Company | Dual feedback control for a high-efficiency class-d power amplifier circuit |
US5276910A (en) * | 1991-09-13 | 1994-01-04 | Resound Corporation | Energy recovering hearing system |
US5345185A (en) | 1992-04-14 | 1994-09-06 | Analog Devices, Inc. | Logarithmic amplifier gain stage |
US5298811A (en) | 1992-08-03 | 1994-03-29 | Analog Devices, Inc. | Synchronous logarithmic amplifier |
US5327337A (en) | 1992-09-01 | 1994-07-05 | Broadcast Electronics, Inc. | Resonant push-pull switching power amplifier |
US5291123A (en) | 1992-09-09 | 1994-03-01 | Hewlett-Packard Company | Precision reference current generator |
EP0660980B1 (en) | 1992-09-15 | 2000-06-07 | Analogic Corporation | High power solid state r.f. amplifier |
US5311150A (en) * | 1992-09-18 | 1994-05-10 | Tektronix, Inc. | Convertible oscillator circuit |
FI930632A (en) | 1993-02-12 | 1994-08-13 | Nokia Mobile Phones Ltd | Switching to adjust the power of the transceiver |
US5450036A (en) | 1993-02-23 | 1995-09-12 | Rohm Co., Ltd. | Power amplifier circuit for audio signal and audio device using the same |
US5343162A (en) | 1993-04-06 | 1994-08-30 | At&T Bell Laboratories | RF variable gain tuned output amplifier which maintains high Q in saturation |
GB2278727B (en) | 1993-06-02 | 1997-04-09 | Nec Corp | Bipolar transistor circuit |
US5648743A (en) | 1993-08-10 | 1997-07-15 | Fujitsu Limited | Amplifying circuit for an integrated circuit with low-noise characteristic |
US5489176A (en) | 1993-08-23 | 1996-02-06 | Emhart Inc. | Male clinch fastener with cold-formed locking flange and associated installation method |
US5381112A (en) | 1993-09-22 | 1995-01-10 | Motorola, Inc. | Fully differential line driver circuit having common-mode feedback |
FR2712126B1 (en) * | 1993-11-05 | 1995-12-01 | Thomson Csf | Power amplifier of the H-bridge type and its blocking means and power amplifier device comprising such amplifiers. |
JP3460276B2 (en) * | 1993-12-14 | 2003-10-27 | 松下電工株式会社 | Class E push-pull power amplifier circuit |
JP2831252B2 (en) * | 1993-12-14 | 1998-12-02 | 松下電工株式会社 | Class E push-pull power amplifier circuit |
JP2831257B2 (en) * | 1994-01-26 | 1998-12-02 | 松下電工株式会社 | Class E push-pull power amplifier circuit |
JP3123343B2 (en) | 1994-05-11 | 2001-01-09 | 富士電機株式会社 | Stabilized power supply and manufacturing method thereof |
GB2289810A (en) | 1994-05-20 | 1995-11-29 | Microelectronics Tech Inc | An r.f. switch using transistors as switch and gain elements |
US5477188A (en) | 1994-07-14 | 1995-12-19 | Eni | Linear RF power amplifier |
US5709959A (en) * | 1994-09-16 | 1998-01-20 | Ricoh Company, Ltd. | Organic thin film electroluminescence device |
US5623231A (en) | 1994-09-26 | 1997-04-22 | Endgate Corporation | Push-pull power amplifier |
DE69529395T2 (en) * | 1994-12-29 | 2003-11-20 | At & T Corp | Power amplifier with great dynamics |
FR2729844B1 (en) * | 1995-01-26 | 1997-11-28 | Sabin Pierre Jean Claude | IMPLANT MEDICAL DEVICE ASSEMBLY FOR ELECTRICAL CONNECTIONS THROUGH THE SKIN |
US5612647A (en) | 1995-06-30 | 1997-03-18 | Harris Corporation | RF power amplifier system having an improved drive system |
US5742205A (en) | 1995-07-27 | 1998-04-21 | Scientific-Atlanta, Inc. | Field effect transistor cable television line amplifier |
US5657219A (en) | 1995-08-29 | 1997-08-12 | Crown International, Inc. | Opposed current power converter |
US5974041A (en) | 1995-12-27 | 1999-10-26 | Qualcomm Incorporated | Efficient parallel-stage power amplifier |
US5724003A (en) * | 1995-12-29 | 1998-03-03 | Maxim Integrated Products, Inc. | Methods and apparatus for signal amplitude control systems |
KR100189500B1 (en) | 1996-01-29 | 1999-06-01 | 구자홍 | Converter of a switched reluctance motor |
US5880631A (en) * | 1996-02-28 | 1999-03-09 | Qualcomm Incorporated | High dynamic range variable gain amplifier |
JPH09238037A (en) | 1996-03-01 | 1997-09-09 | Nec Corp | Output power control circuit |
US5874840A (en) | 1996-04-26 | 1999-02-23 | International Business Machines Corporation | Differential source follower with body effect compensation |
US6147511A (en) | 1996-05-28 | 2000-11-14 | Altera Corporation | Overvoltage-tolerant interface for integrated circuits |
US5973368A (en) * | 1996-06-05 | 1999-10-26 | Pearce; Lawrence G. | Monolithic class D amplifier |
JP3508401B2 (en) * | 1996-07-12 | 2004-03-22 | 富士通株式会社 | Amplifier circuit and multi-stage amplifier circuit |
JPH10163772A (en) | 1996-10-04 | 1998-06-19 | Sanyo Electric Co Ltd | Power amplifier and chip carrier |
US5705959A (en) * | 1996-10-08 | 1998-01-06 | The United States Of America As Represented By The Secretary Of The Air Force | High efficiency low distortion amplification |
US5831331A (en) | 1996-11-22 | 1998-11-03 | Philips Electronics North America Corporation | Self-shielding inductor for multi-layer semiconductor integrated circuits |
JP3204132B2 (en) | 1996-11-29 | 2001-09-04 | ヤマハ株式会社 | Drive circuit |
US5867061A (en) | 1996-12-04 | 1999-02-02 | Northern Telecom Limited | Transformer coupled stacked power amplifier |
JP3434519B2 (en) | 1996-12-30 | 2003-08-11 | サムスン エレクトロニクス カンパニー リミテッド | Synthetic linear amplifier and control method thereof |
DE69815506T2 (en) | 1997-02-24 | 2003-12-11 | Advanced Energy Ind Inc | HIGH PERFORMANCE RF PLASMA PROCESS SYSTEM |
US5880635A (en) | 1997-04-16 | 1999-03-09 | Sony Corporation | Apparatus for optimizing the performance of a power amplifier |
US6167134A (en) | 1997-04-22 | 2000-12-26 | Silicon Laboratories, Inc. | External resistor and method to minimize power dissipation in DC holding circuitry for a communication system |
US5768112A (en) * | 1997-05-30 | 1998-06-16 | Delco Electronics Corp. | Sub-resonant series resonant converter having improved form factor and reduced EMI |
US6016075A (en) | 1997-06-04 | 2000-01-18 | Lord Corporation | Class-D amplifier input structure |
US5969582A (en) | 1997-07-03 | 1999-10-19 | Ericsson Inc. | Impedance matching circuit for power amplifier |
US5982231A (en) * | 1997-07-23 | 1999-11-09 | Linfinity Microelectronics, Inc. | Multiple channel class D audio amplifier |
EP0895351B1 (en) * | 1997-07-31 | 2005-05-11 | Matsushita Electric Industrial Co., Ltd. | Automatic microwave gain control device |
US5936466A (en) | 1997-08-04 | 1999-08-10 | International Business Machines Corporation | Differential operational transconductance amplifier |
US6236271B1 (en) | 1997-09-30 | 2001-05-22 | Conexant Systems, Inc. | Multi-layer carrier module for power amplifier systems within a digital cellular telephone |
US5942946A (en) | 1997-10-10 | 1999-08-24 | Industrial Technology Research Institute | RF power amplifier with high efficiency and a wide range of gain control |
ATE421723T1 (en) | 1997-10-15 | 2009-02-15 | Em Microelectronic Marin Sa | METHOD FOR PRODUCING A VERY PRECISE CURRENT |
US6198352B1 (en) | 1997-11-20 | 2001-03-06 | Applied Micro Circuits Corporation | Radio frequency low noise amplifier fabricated in complementary metal oxide semiconductor technology |
US6011438A (en) | 1997-11-27 | 2000-01-04 | Nec Corporation | Push-pull wideband semiconductor amplifier |
US6075995A (en) | 1998-01-30 | 2000-06-13 | Conexant Systems, Inc. | Amplifier module with two power amplifiers for dual band cellular phones |
JP3496752B2 (en) * | 1998-02-19 | 2004-02-16 | シャープ株式会社 | Microwave / millimeter wave equipment |
US6208875B1 (en) | 1998-04-08 | 2001-03-27 | Conexant Systems, Inc. | RF architecture for cellular dual-band telephones |
US6009023A (en) * | 1998-05-26 | 1999-12-28 | Etron Technology, Inc. | High performance DRAM structure employing multiple thickness gate oxide |
WO2000003478A1 (en) | 1998-07-08 | 2000-01-20 | Hitachi, Ltd. | High-frequency power amplifier module |
US6072362A (en) * | 1998-07-10 | 2000-06-06 | Ameritherm, Inc. | System for enabling a full-bridge switch-mode amplifier to recover all reactive energy |
US6133793A (en) * | 1998-07-27 | 2000-10-17 | Motorola, Inc. | Circuit and method of amplifying a signal for a receiver |
US6232634B1 (en) | 1998-07-29 | 2001-05-15 | Motorola, Inc. | Non-volatile memory cell and method for manufacturing same |
DE69934015T2 (en) | 1998-09-10 | 2007-06-21 | Level One Communications, Inc., Sacramento | A SINGLE CHIP C-MOS DIRECT MIXER RECEIVER |
US6094099A (en) | 1998-10-20 | 2000-07-25 | Trw Inc. | High dynamic range variable gain distributed amplifier |
FR2785107A1 (en) | 1998-10-27 | 2000-04-28 | Koninkl Philips Electronics Nv | LOW INPUTANCE CURRENT AMPLIFIER |
US6150852A (en) | 1999-01-14 | 2000-11-21 | Qualcomm Incorporated | Active differential to single-ended converter |
US6274937B1 (en) | 1999-02-01 | 2001-08-14 | Micron Technology, Inc. | Silicon multi-chip module packaging with integrated passive components and method of making |
US6424181B1 (en) | 1999-02-17 | 2002-07-23 | Elbrus International Limited | High-speed low-power sense amplifying half-latch and apparatus thereof for small-swing differential logic (SSDL) |
US6157258A (en) | 1999-03-17 | 2000-12-05 | Ameritherm, Inc. | High frequency power amplifier |
US6147886A (en) * | 1999-05-15 | 2000-11-14 | Technical Witts, Inc. | Dual opposed interleaved coupled inductor soft switching converters |
US6370396B1 (en) * | 1999-05-25 | 2002-04-09 | Transtek, Inc. | Facility-wide communication system and method |
US6188274B1 (en) * | 1999-06-04 | 2001-02-13 | Sharp Laboratories Of America, Inc. | Bootstrap capacitor power supply for low voltage mobile communications power amplifier |
US6198347B1 (en) | 1999-07-29 | 2001-03-06 | Tropian, Inc. | Driving circuits for switch mode RF power amplifiers |
US6319829B1 (en) | 1999-08-18 | 2001-11-20 | International Business Machines Corporation | Enhanced interconnection to ceramic substrates |
US7555263B1 (en) * | 1999-10-21 | 2009-06-30 | Broadcom Corporation | Adaptive radio transceiver |
US6362525B1 (en) * | 1999-11-09 | 2002-03-26 | Cypress Semiconductor Corp. | Circuit structure including a passive element formed within a grid array substrate and method for making the same |
US6300827B1 (en) * | 1999-12-09 | 2001-10-09 | Maxim Integrated Products, Inc. | Method and apparatus for cascaded ground return amplifier |
US6208549B1 (en) | 2000-02-24 | 2001-03-27 | Xilinx, Inc. | One-time programmable poly-fuse circuit for implementing non-volatile functions in a standard sub 0.35 micron CMOS |
US6987425B1 (en) | 2000-05-17 | 2006-01-17 | Marvell International Ltd. | Low phase noise MOS LC oscillator |
US6323735B1 (en) | 2000-05-25 | 2001-11-27 | Silicon Laboratories, Inc. | Method and apparatus for synthesizing high-frequency signals utilizing on-package oscillator circuit inductors |
US6222788B1 (en) | 2000-05-30 | 2001-04-24 | Micron Technology, Inc. | Vertical gate transistors in pass transistor logic decode circuits |
US6355531B1 (en) * | 2000-08-09 | 2002-03-12 | International Business Machines Corporation | Method for fabricating semiconductor devices with different properties using maskless process |
US6549071B1 (en) | 2000-09-12 | 2003-04-15 | Silicon Laboratories, Inc. | Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices |
US6362606B1 (en) | 2000-09-12 | 2002-03-26 | Silicon Laboratories, Inc | Method and apparatus for regulating a voltage |
US6448847B1 (en) | 2000-09-12 | 2002-09-10 | Silicon Laboratories, Inc. | Apparatus and method for providing differential-to-single ended conversion and impedance transformation |
US6462620B1 (en) | 2000-09-12 | 2002-10-08 | Silicon Laboratories, Inc. | RF power amplifier circuitry and method for amplifying signals |
US6392488B1 (en) | 2000-09-12 | 2002-05-21 | Silicon Laboratories, Inc. | Dual oxide gate device and method for providing the same |
US7000458B2 (en) | 2001-06-20 | 2006-02-21 | Obayashi Corporation | Weighing equipment for concrete material |
JP2003078102A (en) * | 2001-09-06 | 2003-03-14 | Mitsubishi Electric Corp | Flip-chip amplifier |
US6894565B1 (en) | 2002-12-03 | 2005-05-17 | Silicon Laboratories, Inc. | Fast settling power amplifier regulator |
-
2000
- 2000-09-12 US US09/660,123 patent/US6549071B1/en not_active Expired - Lifetime
-
2001
- 2001-04-26 US US09/842,456 patent/US6727754B2/en not_active Expired - Lifetime
- 2001-09-11 EP EP01973020A patent/EP1329021A2/en not_active Withdrawn
- 2001-09-11 WO PCT/US2001/028589 patent/WO2002023716A2/en active Application Filing
- 2001-09-11 AU AU2001292643A patent/AU2001292643A1/en not_active Abandoned
- 2001-09-11 JP JP2002527045A patent/JP5230054B2/en not_active Expired - Fee Related
- 2001-09-11 KR KR1020037003604A patent/KR100887427B1/en not_active IP Right Cessation
-
2003
- 2003-03-18 US US10/390,935 patent/US6788141B2/en not_active Expired - Lifetime
- 2003-05-30 US US10/448,963 patent/US6816011B2/en not_active Expired - Lifetime
- 2003-09-29 US US10/673,956 patent/US6927630B2/en not_active Expired - Lifetime
-
2004
- 2004-03-30 US US10/812,853 patent/US20050052235A1/en not_active Abandoned
- 2004-03-30 US US10/813,589 patent/US8149064B2/en not_active Expired - Fee Related
- 2004-03-30 US US10/812,858 patent/US20050052167A1/en not_active Abandoned
- 2004-03-30 US US10/813,566 patent/US20050052236A1/en not_active Abandoned
- 2004-11-08 US US10/983,974 patent/US7224232B2/en not_active Expired - Fee Related
-
2006
- 2006-08-30 US US11/468,354 patent/US7935990B2/en not_active Expired - Fee Related
-
2007
- 2007-10-31 US US11/931,581 patent/US8274330B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050052167A1 (en) | 2005-03-10 |
US6549071B1 (en) | 2003-04-15 |
US20050052235A1 (en) | 2005-03-10 |
US20030179045A1 (en) | 2003-09-25 |
US7224232B2 (en) | 2007-05-29 |
JP2004526339A (en) | 2004-08-26 |
EP1329021A2 (en) | 2003-07-23 |
KR100887427B1 (en) | 2009-03-09 |
KR20030063338A (en) | 2003-07-28 |
US20070096816A1 (en) | 2007-05-03 |
US6927630B2 (en) | 2005-08-09 |
US20050052236A1 (en) | 2005-03-10 |
US20080284512A1 (en) | 2008-11-20 |
US7935990B2 (en) | 2011-05-03 |
WO2002023716A2 (en) | 2002-03-21 |
WO2002023716A3 (en) | 2003-02-13 |
US20030206058A1 (en) | 2003-11-06 |
US20040075499A1 (en) | 2004-04-22 |
US6788141B2 (en) | 2004-09-07 |
US20020044018A1 (en) | 2002-04-18 |
US20050151591A1 (en) | 2005-07-14 |
US20050052237A1 (en) | 2005-03-10 |
US8149064B2 (en) | 2012-04-03 |
JP5230054B2 (en) | 2013-07-10 |
US6727754B2 (en) | 2004-04-27 |
US8274330B2 (en) | 2012-09-25 |
US6816011B2 (en) | 2004-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2001292643A1 (en) | Power amplifier circuitry and method | |
AU6262801A (en) | Rf power amplifier and methods for improving the efficiency thereof | |
AU2002367231A1 (en) | Power amplifier | |
AU2001286419A1 (en) | Endourethral device and method | |
AU2001280068A1 (en) | High-efficiency audio power amplifier | |
AU2001274787A1 (en) | Communication method and its power control method | |
AU2001247790A1 (en) | Battery-operated wireless-communication apparatus and method | |
AU2001275105A1 (en) | Power mosfet and method of making the same | |
AU2001244659A1 (en) | Power amplifier module | |
AU2001247487A1 (en) | Amplifier circuit and method for providing negative feedback thereto | |
AU5336199A (en) | Power amplification apparatus and method therefor | |
AU2001269878A1 (en) | Power mosfet and method of making the same | |
AU6901200A (en) | Form keys and method using form keys | |
AU2001279850A1 (en) | Method and arrangement for studsystem | |
AUPQ555400A0 (en) | Laser system and methods | |
AU2001292936A1 (en) | Octahydro-indolizines and quinolizines and hexahydro-pyrrolizines | |
AU2001232092A1 (en) | Amplifier | |
AU2003260845A1 (en) | Power amplifier and method for power amplification | |
AU2001295185A1 (en) | Multiplexing-interleaving and demultiplexing-deinterleaving | |
AU2001233932A1 (en) | Method and composition | |
AU2001236718A1 (en) | Bioreactor and related method | |
AU6013800A (en) | Method and apparatus for power amplification | |
AU2001288412A1 (en) | Amplifier bias voltage generating circuit and method | |
EP1241780A3 (en) | Audio power amplifying apparatus and method | |
AU2001249519A1 (en) | An educational aid and method |