AU2001268030B2 - Thermal diode for energy conversion - Google Patents
Thermal diode for energy conversion Download PDFInfo
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- AU2001268030B2 AU2001268030B2 AU2001268030A AU2001268030A AU2001268030B2 AU 2001268030 B2 AU2001268030 B2 AU 2001268030B2 AU 2001268030 A AU2001268030 A AU 2001268030A AU 2001268030 A AU2001268030 A AU 2001268030A AU 2001268030 B2 AU2001268030 B2 AU 2001268030B2
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- Australia
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- converter
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- 238000006243 chemical reaction Methods 0.000 title description 26
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 121
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J45/00—Discharge tubes functioning as thermionic generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N3/00—Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/519,640 | 2000-03-06 | ||
US09/519,640 US6489704B1 (en) | 1999-03-11 | 2000-03-06 | Hybrid thermionic energy converter and method |
US21356400P | 2000-06-22 | 2000-06-22 | |
US60/213,564 | 2000-06-22 | ||
US09/721,051 US6396191B1 (en) | 1999-03-11 | 2000-11-22 | Thermal diode for energy conversion |
US09/721,051 | 2000-11-22 | ||
PCT/US2001/007046 WO2001069657A2 (en) | 2000-03-06 | 2001-03-06 | Thermal diode for energy conversion |
Publications (2)
Publication Number | Publication Date |
---|---|
AU2001268030A1 AU2001268030A1 (en) | 2001-12-06 |
AU2001268030B2 true AU2001268030B2 (en) | 2004-09-02 |
Family
ID=27395886
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001268030A Ceased AU2001268030B2 (en) | 2000-03-06 | 2001-03-06 | Thermal diode for energy conversion |
AU6803001A Pending AU6803001A (en) | 2000-03-06 | 2001-03-06 | Thermal diode for energy conversion |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU6803001A Pending AU6803001A (en) | 2000-03-06 | 2001-03-06 | Thermal diode for energy conversion |
Country Status (10)
Families Citing this family (77)
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US6678305B1 (en) * | 1999-05-04 | 2004-01-13 | Noekismet, L.L.C. | Surface catalyst infra red laser |
US7223914B2 (en) * | 1999-05-04 | 2007-05-29 | Neokismet Llc | Pulsed electron jump generator |
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US7371962B2 (en) | 1999-05-04 | 2008-05-13 | Neokismet, Llc | Diode energy converter for chemical kinetic electron energy transfer |
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CN1428020A (zh) | 2003-07-02 |
AU6803001A (en) | 2001-09-24 |
EP1282935A4 (en) | 2008-01-09 |
BR0109001A (pt) | 2003-04-29 |
CN1428020B (zh) | 2012-05-09 |
EP1282935A2 (en) | 2003-02-12 |
WO2001069657A3 (en) | 2002-04-04 |
EP1282935B1 (en) | 2014-10-29 |
KR20030047875A (ko) | 2003-06-18 |
US6396191B1 (en) | 2002-05-28 |
WO2001069657A2 (en) | 2001-09-20 |
IL151600A0 (en) | 2003-04-10 |
MXPA02008675A (es) | 2003-04-14 |
KR100743506B1 (ko) | 2007-07-27 |
WO2001069657A8 (en) | 2002-07-04 |
CA2401810C (en) | 2010-05-11 |
CA2401810A1 (en) | 2001-09-20 |
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