IL151600A0 - Thermal diode for energy conversion - Google Patents

Thermal diode for energy conversion

Info

Publication number
IL151600A0
IL151600A0 IL15160001A IL15160001A IL151600A0 IL 151600 A0 IL151600 A0 IL 151600A0 IL 15160001 A IL15160001 A IL 15160001A IL 15160001 A IL15160001 A IL 15160001A IL 151600 A0 IL151600 A0 IL 151600A0
Authority
IL
Israel
Prior art keywords
energy conversion
thermal diode
diode
thermal
conversion
Prior art date
Application number
IL15160001A
Other languages
English (en)
Original Assignee
Eneco Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/519,640 external-priority patent/US6489704B1/en
Application filed by Eneco Inc filed Critical Eneco Inc
Publication of IL151600A0 publication Critical patent/IL151600A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J45/00—Discharge tubes functioning as thermionic generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N3/00—Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
IL15160001A 2000-03-06 2001-03-06 Thermal diode for energy conversion IL151600A0 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/519,640 US6489704B1 (en) 1999-03-11 2000-03-06 Hybrid thermionic energy converter and method
US21356400P 2000-06-22 2000-06-22
US09/721,051 US6396191B1 (en) 1999-03-11 2000-11-22 Thermal diode for energy conversion
PCT/US2001/007046 WO2001069657A2 (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion

Publications (1)

Publication Number Publication Date
IL151600A0 true IL151600A0 (en) 2003-04-10

Family

ID=27395886

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15160001A IL151600A0 (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion

Country Status (10)

Country Link
US (1) US6396191B1 (xx)
EP (1) EP1282935B1 (xx)
KR (1) KR100743506B1 (xx)
CN (1) CN1428020B (xx)
AU (2) AU2001268030B2 (xx)
BR (1) BR0109001A (xx)
CA (1) CA2401810C (xx)
IL (1) IL151600A0 (xx)
MX (1) MXPA02008675A (xx)
WO (1) WO2001069657A2 (xx)

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US6649823B2 (en) 1999-05-04 2003-11-18 Neokismet, L.L.C. Gas specie electron-jump chemical energy converter
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US7021836B2 (en) * 2000-12-26 2006-04-04 Emcore Corporation Attenuator and conditioner
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US6779347B2 (en) * 2001-05-21 2004-08-24 C.P. Baker Securities, Inc. Solid-state thermionic refrigeration
US7122735B2 (en) * 2001-06-29 2006-10-17 Neokismet, L.L.C. Quantum well energizing method and apparatus
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TWI556547B (zh) * 2014-09-16 2016-11-01 盧昭正 擴散電勢二極體應用電路
RU2581606C1 (ru) * 2014-12-03 2016-04-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Уфимский государственный авиационный технический университет" Термоэмиссионный магнитопровод статора
CN104659137B (zh) * 2014-12-22 2017-02-22 电子科技大学 一种全固态光子增强热电子发射器件
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Also Published As

Publication number Publication date
CA2401810C (en) 2010-05-11
MXPA02008675A (es) 2003-04-14
WO2001069657A3 (en) 2002-04-04
EP1282935A4 (en) 2008-01-09
EP1282935A2 (en) 2003-02-12
AU2001268030B2 (en) 2004-09-02
KR100743506B1 (ko) 2007-07-27
WO2001069657A8 (en) 2002-07-04
US6396191B1 (en) 2002-05-28
WO2001069657A2 (en) 2001-09-20
EP1282935B1 (en) 2014-10-29
CA2401810A1 (en) 2001-09-20
CN1428020B (zh) 2012-05-09
CN1428020A (zh) 2003-07-02
KR20030047875A (ko) 2003-06-18
AU6803001A (en) 2001-09-24
BR0109001A (pt) 2003-04-29

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