AU2001252710A1 - Chemically amplified resist and a resist composition - Google Patents

Chemically amplified resist and a resist composition

Info

Publication number
AU2001252710A1
AU2001252710A1 AU2001252710A AU5271001A AU2001252710A1 AU 2001252710 A1 AU2001252710 A1 AU 2001252710A1 AU 2001252710 A AU2001252710 A AU 2001252710A AU 5271001 A AU5271001 A AU 5271001A AU 2001252710 A1 AU2001252710 A1 AU 2001252710A1
Authority
AU
Australia
Prior art keywords
resist
chemically amplified
composition
resist composition
amplified resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001252710A
Inventor
Yong-Joon Choi
Yoon-Sik Chung
Deog-Bae Kim
Hyeon-Jin Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of AU2001252710A1 publication Critical patent/AU2001252710A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AU2001252710A 2000-04-14 2001-04-13 Chemically amplified resist and a resist composition Abandoned AU2001252710A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020000019713A KR100553263B1 (en) 2000-04-14 2000-04-14 Polymer for chemically amplified resist and resists using this polymer
KR0019713 2000-04-14
PCT/KR2001/000617 WO2001079934A1 (en) 2000-04-14 2001-04-13 Chemically amplified resist and a resist composition

Publications (1)

Publication Number Publication Date
AU2001252710A1 true AU2001252710A1 (en) 2001-10-30

Family

ID=19664392

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001252710A Abandoned AU2001252710A1 (en) 2000-04-14 2001-04-13 Chemically amplified resist and a resist composition

Country Status (7)

Country Link
US (1) US6743881B2 (en)
JP (1) JP3735572B2 (en)
KR (1) KR100553263B1 (en)
CN (1) CN1223902C (en)
AU (1) AU2001252710A1 (en)
TW (1) TWI286668B (en)
WO (1) WO2001079934A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100308423B1 (en) * 1999-09-07 2001-09-26 주식회사 동진쎄미켐 Polymer for chemically amplified resist and resists using this polymer
KR20050115172A (en) * 2004-06-03 2005-12-07 주식회사 동진쎄미켐 Photosensitive polymer and chemically amplified photoresist composition including the same
JP2011213058A (en) * 2010-04-01 2011-10-27 Canon Inc Photosensitive resin composition and method for producing liquid discharge head

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60446A (en) 1983-06-17 1985-01-05 Fujitsu Ltd Formation of pattern
JPS6457257A (en) * 1987-08-28 1989-03-03 Toshiba Corp Negative type resist composition
EP0440374B1 (en) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
KR100233367B1 (en) * 1993-04-15 1999-12-01 카나가와 치히로 Resist composition
JP3573358B2 (en) 1994-02-25 2004-10-06 クラリアント インターナショナル リミテッド Radiation-sensitive composition
KR100293130B1 (en) * 1995-04-12 2001-09-17 카나가와 치히로 Polymer compound and chemically amplified positive resist material
TW448344B (en) * 1995-10-09 2001-08-01 Shinetsu Chemical Co Chemically amplified positive resist composition
TW436663B (en) * 1995-11-02 2001-05-28 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
KR100190012B1 (en) 1996-01-12 1999-06-01 윤종용 Method of manufacturing base resin for chemically amplified resist
JP3591672B2 (en) * 1996-02-05 2004-11-24 富士写真フイルム株式会社 Positive photosensitive composition
JP3125678B2 (en) * 1996-04-08 2001-01-22 信越化学工業株式会社 Chemically amplified positive resist material
US6048661A (en) * 1997-03-05 2000-04-11 Shin-Etsu Chemical Co., Ltd. Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
JP3546687B2 (en) * 1998-03-26 2004-07-28 住友化学工業株式会社 Photoresist composition
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
KR100320773B1 (en) * 1999-05-31 2002-01-17 윤종용 photoresist compositions

Also Published As

Publication number Publication date
US6743881B2 (en) 2004-06-01
US20030181629A1 (en) 2003-09-25
CN1423760A (en) 2003-06-11
WO2001079934A1 (en) 2001-10-25
CN1223902C (en) 2005-10-19
JP2004526980A (en) 2004-09-02
KR20010096806A (en) 2001-11-08
JP3735572B2 (en) 2006-01-18
TWI286668B (en) 2007-09-11
KR100553263B1 (en) 2006-02-20

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