AU2001241186A1 - Method for precisely machining microstructure - Google Patents

Method for precisely machining microstructure

Info

Publication number
AU2001241186A1
AU2001241186A1 AU2001241186A AU4118601A AU2001241186A1 AU 2001241186 A1 AU2001241186 A1 AU 2001241186A1 AU 2001241186 A AU2001241186 A AU 2001241186A AU 4118601 A AU4118601 A AU 4118601A AU 2001241186 A1 AU2001241186 A1 AU 2001241186A1
Authority
AU
Australia
Prior art keywords
microstructure
precisely machining
machining
precisely
machining microstructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001241186A
Inventor
Ichiro Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of AU2001241186A1 publication Critical patent/AU2001241186A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3088—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Peptides Or Proteins (AREA)
  • Weting (AREA)
AU2001241186A 2000-03-16 2001-03-16 Method for precisely machining microstructure Abandoned AU2001241186A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000073806 2000-03-16
JP2000-073806 2000-03-16
PCT/JP2001/002140 WO2001068513A1 (en) 2000-03-16 2001-03-16 Method for precisely machining microstructure

Publications (1)

Publication Number Publication Date
AU2001241186A1 true AU2001241186A1 (en) 2001-09-24

Family

ID=18591989

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001241186A Abandoned AU2001241186A1 (en) 2000-03-16 2001-03-16 Method for precisely machining microstructure

Country Status (6)

Country Link
US (1) US6838386B2 (en)
EP (1) EP1281666A1 (en)
KR (1) KR20030005227A (en)
CN (1) CN1407947A (en)
AU (1) AU2001241186A1 (en)
WO (1) WO2001068513A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5991535A (en) * 1982-11-16 1984-05-26 Matsushita Electric Ind Co Ltd Setting switch of digital code
EP1154493A3 (en) * 1997-05-30 2003-10-15 Matsushita Electric Industrial Co., Ltd. Light-emitting semiconductor device having quantum dots
US20040028694A1 (en) * 2002-02-01 2004-02-12 Young Mark J. Novel nanoparticles and use thereof
DE60336000D1 (en) * 2002-09-20 2011-03-24 Panasonic Corp PROCESS FOR PRODUCING NANOTEILES
US7112617B2 (en) * 2003-04-22 2006-09-26 International Business Machines Corporation Patterned substrate with hydrophilic/hydrophobic contrast, and method of use
US7282241B2 (en) * 2003-04-22 2007-10-16 International Business Machines Corporation Patterned, high surface area substrate with hydrophilic/hydrophobic contrast, and method of use
US7041530B2 (en) * 2003-06-12 2006-05-09 Matsushita Electric Industrial Co., Ltd. Method of production of nano particle dispersed composite material
DE502004010226D1 (en) * 2004-03-11 2009-11-26 Samsung Mobile Display Co Ltd Method for producing an organic vertical field effect transistor
JP4425774B2 (en) 2004-03-11 2010-03-03 三星モバイルディスプレイ株式會社 Vertical field effect transistor, vertical field effect transistor manufacturing method therefor, and flat panel display device including the same
CA2565113A1 (en) * 2004-06-10 2005-12-22 Sumitomo Electric Industries, Ltd. Metal catalyst and method for preparation thereof
WO2006064640A1 (en) * 2004-12-14 2006-06-22 Matsushita Electric Industrial Co., Ltd. Method of selectively disposing ferritin
WO2006132050A1 (en) * 2005-06-07 2006-12-14 Matsushita Electric Industrial Co., Ltd. Method for producing zinc oxide-protein complex
EP1992990A4 (en) * 2006-03-06 2011-03-30 Asahi Glass Co Ltd Treated substratum with hydrophilic region and water-repellent region and process for producing the same
KR100789988B1 (en) * 2006-06-01 2008-01-02 성균관대학교산학협력단 Method for fabricating Nano structures on silicon wafer using silicon dry etching and method for manufacturing Non- volatile memory using the structure
US20100021391A1 (en) * 2006-07-14 2010-01-28 Montana State University Novel nanoparticles for biofilm targeting
JP4869967B2 (en) * 2006-10-20 2012-02-08 三菱電機株式会社 Method for roughening silicon substrate and method for producing photovoltaic device
JP4149503B2 (en) * 2006-12-07 2008-09-10 松下電器産業株式会社 A method for two-dimensionally arranging ferritin on a substrate
US8178158B2 (en) * 2008-06-02 2012-05-15 Hitachi Global Storage Technologies Netherlands B.V. Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP)
NL2004888A (en) * 2009-06-29 2010-12-30 Asml Netherlands Bv Deposition method and apparatus.
WO2012173162A1 (en) * 2011-06-13 2012-12-20 国立大学法人東北大学 Quantum nanodots, two-dimensional quantum nanodot array and semiconductor device using same and manufacturing method therefor
JP2013239574A (en) * 2012-05-15 2013-11-28 Tokyo Electron Ltd Method for manufacturing solar cell and plasma processing device
JP2014209609A (en) * 2013-03-26 2014-11-06 京セラ株式会社 Semiconductor laser

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103064A (en) * 1976-01-09 1978-07-25 Dios, Inc. Microdevice substrate and method for making micropattern devices
JP3681423B2 (en) 1993-11-02 2005-08-10 松下電器産業株式会社 Aggregate of semiconductor fine columns, semiconductor device, and manufacturing method
GB2319253A (en) 1996-11-16 1998-05-20 Eric Leigh Mayes Composition, for use in a device, comprising a magnetic layer of domain-separated magnetic particles
JP3649588B2 (en) 1997-05-30 2005-05-18 松下電器産業株式会社 Quantum dot manufacturing method
EP1154493A3 (en) * 1997-05-30 2003-10-15 Matsushita Electric Industrial Co., Ltd. Light-emitting semiconductor device having quantum dots
AU1665299A (en) * 1997-10-29 1999-05-17 Universitat Ulm Nanostructures
JPH11233752A (en) 1997-12-12 1999-08-27 Matsushita Electric Ind Co Ltd Method for forming dot body and semiconductor device
EP0926260A3 (en) 1997-12-12 2001-04-11 Matsushita Electric Industrial Co., Ltd. Using antibody - antigen interaction for formation of a patterened metal film
JP3653970B2 (en) 1998-01-14 2005-06-02 松下電器産業株式会社 Quantum dot manufacturing method

Also Published As

Publication number Publication date
EP1281666A1 (en) 2003-02-05
US6838386B2 (en) 2005-01-04
US20020192968A1 (en) 2002-12-19
WO2001068513A1 (en) 2001-09-20
KR20030005227A (en) 2003-01-17
CN1407947A (en) 2003-04-02

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