AU2001231291A1 - High power capacitors from thin layers of metal powder or metal sponge particles - Google Patents

High power capacitors from thin layers of metal powder or metal sponge particles

Info

Publication number
AU2001231291A1
AU2001231291A1 AU2001231291A AU3129101A AU2001231291A1 AU 2001231291 A1 AU2001231291 A1 AU 2001231291A1 AU 2001231291 A AU2001231291 A AU 2001231291A AU 3129101 A AU3129101 A AU 3129101A AU 2001231291 A1 AU2001231291 A1 AU 2001231291A1
Authority
AU
Australia
Prior art keywords
metal
high power
thin layers
power capacitors
sponge particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001231291A
Inventor
Donald L. Mcgervey
Gerhard E. Welsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Case Western Reserve University
Original Assignee
Case Western Reserve University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Case Western Reserve University filed Critical Case Western Reserve University
Publication of AU2001231291A1 publication Critical patent/AU2001231291A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
AU2001231291A 2000-02-03 2001-02-02 High power capacitors from thin layers of metal powder or metal sponge particles Abandoned AU2001231291A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17997700P 2000-02-03 2000-02-03
US60179977 2000-02-03
US18113200P 2000-02-08 2000-02-08
US60181132 2000-02-08
PCT/US2001/003528 WO2001057928A1 (en) 2000-02-03 2001-02-02 High power capacitors from thin layers of metal powder or metal sponge particles

Publications (1)

Publication Number Publication Date
AU2001231291A1 true AU2001231291A1 (en) 2001-08-14

Family

ID=26875874

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001231291A Abandoned AU2001231291A1 (en) 2000-02-03 2001-02-02 High power capacitors from thin layers of metal powder or metal sponge particles

Country Status (6)

Country Link
US (1) US6914769B2 (en)
EP (1) EP1269547A4 (en)
JP (1) JP2003522420A (en)
KR (1) KR20020092945A (en)
AU (1) AU2001231291A1 (en)
WO (1) WO2001057928A1 (en)

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KR20120089778A (en) * 2008-09-04 2012-08-13 비쉐이 스프라그, 인코포레이티드 Bulk capacitor and method
US8351186B2 (en) * 2008-10-10 2013-01-08 Panasonic Corporation Electrode foil for capacitor, manufacturing method therefor, and solid electrolytic capacitor using the electrode foil
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US8619408B2 (en) 2009-12-18 2013-12-31 Cardiac Pacemakers, Inc. Sintered capacitor electrode including a folded connection
US9275801B2 (en) * 2010-03-19 2016-03-01 Cardiac Pacemakers, Inc. Systems and methods for enhanced dielectric properties for electrolytic capacitors
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Also Published As

Publication number Publication date
EP1269547A4 (en) 2006-02-01
WO2001057928A1 (en) 2001-08-09
JP2003522420A (en) 2003-07-22
US20030169560A1 (en) 2003-09-11
EP1269547A1 (en) 2003-01-02
KR20020092945A (en) 2002-12-12
US6914769B2 (en) 2005-07-05

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