ATE79472T1 - Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet. - Google Patents

Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet.

Info

Publication number
ATE79472T1
ATE79472T1 AT85901604T AT85901604T ATE79472T1 AT E79472 T1 ATE79472 T1 AT E79472T1 AT 85901604 T AT85901604 T AT 85901604T AT 85901604 T AT85901604 T AT 85901604T AT E79472 T1 ATE79472 T1 AT E79472T1
Authority
AT
Austria
Prior art keywords
isfet
pct
oxide surface
sec
making
Prior art date
Application number
AT85901604T
Other languages
English (en)
Inventor
David Nicolaas Reinhoudt
Marcel Leonard Marie Pennings
Auke Gerardus Talma
Original Assignee
Priva Agro Holding Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Priva Agro Holding Bv filed Critical Priva Agro Holding Bv
Application granted granted Critical
Publication of ATE79472T1 publication Critical patent/ATE79472T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Molecular Biology (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Power Engineering (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Insulating Materials (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
AT85901604T 1984-03-22 1985-03-22 Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet. ATE79472T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL8400916A NL8400916A (nl) 1984-03-22 1984-03-22 Werkwijze voor het vervaardigen van een isfet en een aldus vervaardigde isfet.
EP85901604A EP0177544B1 (de) 1984-03-22 1985-03-22 Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet
PCT/NL1985/000013 WO1985004480A1 (en) 1984-03-22 1985-03-22 Method of producing an isfet and same isfet

Publications (1)

Publication Number Publication Date
ATE79472T1 true ATE79472T1 (de) 1992-08-15

Family

ID=19843690

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85901604T ATE79472T1 (de) 1984-03-22 1985-03-22 Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet.

Country Status (7)

Country Link
US (1) US4735702A (de)
EP (1) EP0177544B1 (de)
JP (1) JPS61501726A (de)
AT (1) ATE79472T1 (de)
DE (1) DE3586478T2 (de)
NL (1) NL8400916A (de)
WO (1) WO1985004480A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8602242A (nl) * 1986-09-05 1988-04-05 Stichting Ct Voor Micro Elektr Werkwijze voor het vervaardigen van een refet of een chemfet, en de vervaardigde refet of chemfet.
JPS63131056A (ja) * 1986-11-20 1988-06-03 Terumo Corp Ｆｅｔ電極
US4859538A (en) * 1986-11-20 1989-08-22 Ribi Hans O Novel lipid-protein compositions and articles and methods for their preparation
US5074977A (en) * 1987-05-05 1991-12-24 The Washington Technology Center Digital biosensors and method of using same
EP0313629A1 (de) * 1987-05-05 1989-05-03 The Washington Technology Center Vorrichtung mit einem biosensor zur überwachung einer eigenschaft eines besonderen bestandteiles in einem medium
IT1215491B (it) * 1987-05-15 1990-02-14 Enricerche Spa Biosensore con membrana enzimatica legata chimicamente a un dispositivo semiconduttore.
IT1222121B (it) * 1987-07-24 1990-08-31 Eniricerche Spa Sensore per ioni contenente una membrana organica selettiva
US4921591A (en) * 1987-10-13 1990-05-01 Taiyo Yuden Co., Ltd. Ion sensors and their divided parts
IT1228120B (it) * 1988-12-23 1991-05-28 Eniricerche Spa Procedimento per ottenere un sensore multifunzionale a membrana ionoselettiva
CA2047991A1 (en) * 1991-02-04 1992-08-05 John Musacchio Solid contact system for potentiometric sensors
NL194721C (nl) * 1992-10-15 2003-01-07 Priva Agro Holding Bv Anionselectief membraan en een daarvan voorziene sensor.
US5958201A (en) * 1996-08-26 1999-09-28 Dade Behring Inc. Sodium ion-selective-electrode membrane having extended uselife
TW465055B (en) 2000-07-20 2001-11-21 Univ Nat Yunlin Sci & Tech Method and apparatus for measurement of temperature parameter of ISFET using amorphous silicon hydride as sensor membrane
FR2813208B1 (fr) * 2000-08-30 2003-03-28 Commissariat Energie Atomique Structure complexante, dispositif et procede de traitement d'effluents liquides
GB0022360D0 (en) * 2000-09-13 2000-10-25 British Nuclear Fuels Plc Improvemnts in and related to sensors
EP1711803A1 (de) 2004-02-06 2006-10-18 Micronas GmbH Sensor und verfahren zu dessen herstellung
WO2006009807A1 (en) * 2004-06-17 2006-01-26 Cornell Research Foundation, Inc. Growth of inorganic thin films using self-assembled monolayers as nucleation sites
US20080108164A1 (en) * 2006-11-06 2008-05-08 Oleynik Vladislav A Sensor System and Method
DE112009002116B4 (de) * 2008-09-02 2020-11-26 Toyota Jidosha Kabushiki Kaisha Pulver für einen Magnetpulverkern, Magnetpulverkern und Verfahren zum Herstellen dieser Erzeugnisse
DE102015121344B4 (de) * 2015-12-08 2023-11-02 Infineon Technologies Austria Ag Halbleitervorrichtung und verfahren zu ihrer herstellung
US10794853B2 (en) * 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2019099C3 (de) * 1970-04-21 1975-11-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung eines stabilen Oberflachenschutzes fur Halbleiterbauelemente
US4146585A (en) * 1977-03-02 1979-03-27 Union Carbide Corporation Process for preparing silane grafted polymers
US4302530A (en) * 1977-12-08 1981-11-24 University Of Pennsylvania Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material
JPS5825221B2 (ja) * 1977-12-12 1983-05-26 株式会社クラレ Ｆｅｔ比較電極
JPS5853745A (ja) * 1981-09-28 1983-03-30 Hitachi Ltd ２次元電気泳動装置
JPS58103656A (ja) * 1981-12-16 1983-06-20 Hitachi Ltd 電気泳動用装置
US4476003A (en) * 1983-04-07 1984-10-09 The United States Of America As Represented By The United States Department Of Energy Chemical anchoring of organic conducting polymers to semiconducting surfaces
JPS59210356A (ja) * 1983-05-13 1984-11-29 Kuraray Co Ltd トリグリセライドセンサ
JPS60177256A (ja) * 1984-02-23 1985-09-11 Shimadzu Corp イオンセンサ−

Also Published As

Publication number Publication date
NL8400916A (nl) 1985-10-16
JPS61501726A (ja) 1986-08-14
EP0177544A1 (de) 1986-04-16
WO1985004480A1 (en) 1985-10-10
US4735702A (en) 1988-04-05
DE3586478T2 (de) 1993-02-25
EP0177544B1 (de) 1992-08-12
DE3586478D1 (de) 1992-09-17

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