ATE551724T1 - Feldeffekttransistor mit einer boraluminiumnitrid-diamantheterostruktur - Google Patents
Feldeffekttransistor mit einer boraluminiumnitrid-diamantheterostrukturInfo
- Publication number
- ATE551724T1 ATE551724T1 AT07852863T AT07852863T ATE551724T1 AT E551724 T1 ATE551724 T1 AT E551724T1 AT 07852863 T AT07852863 T AT 07852863T AT 07852863 T AT07852863 T AT 07852863T AT E551724 T1 ATE551724 T1 AT E551724T1
- Authority
- AT
- Austria
- Prior art keywords
- boraluminum
- heteros
- field effect
- effect transistor
- diamond
- Prior art date
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 4
- 239000010432 diamond Substances 0.000 title abstract 4
- 230000005669 field effect Effects 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
- H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/557,514 US7557378B2 (en) | 2006-11-08 | 2006-11-08 | Boron aluminum nitride diamond heterostructure |
PCT/US2007/022325 WO2008057193A1 (en) | 2006-11-08 | 2007-10-19 | Boron aluminum nitride diamond heterostructure |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE551724T1 true ATE551724T1 (de) | 2012-04-15 |
Family
ID=39145421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07852863T ATE551724T1 (de) | 2006-11-08 | 2007-10-19 | Feldeffekttransistor mit einer boraluminiumnitrid-diamantheterostruktur |
Country Status (4)
Country | Link |
---|---|
US (2) | US7557378B2 (de) |
EP (2) | EP2455973B1 (de) |
AT (1) | ATE551724T1 (de) |
WO (1) | WO2008057193A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7498191B2 (en) * | 2006-05-22 | 2009-03-03 | Chien-Min Sung | Semiconductor-on-diamond devices and associated methods |
EP2118335A1 (de) | 2007-01-22 | 2009-11-18 | Element Six Limited | Boron-dotiertes diamantenmaterial von hoher gleichförmigkeit |
US8268707B2 (en) * | 2009-06-22 | 2012-09-18 | Raytheon Company | Gallium nitride for liquid crystal electrodes |
US8395165B2 (en) | 2011-07-08 | 2013-03-12 | Bridelux, Inc. | Laterally contacted blue LED with superlattice current spreading layer |
US20130026480A1 (en) | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
US8916906B2 (en) | 2011-07-29 | 2014-12-23 | Kabushiki Kaisha Toshiba | Boron-containing buffer layer for growing gallium nitride on silicon |
US9343641B2 (en) | 2011-08-02 | 2016-05-17 | Manutius Ip, Inc. | Non-reactive barrier metal for eutectic bonding process |
US9142743B2 (en) | 2011-08-02 | 2015-09-22 | Kabushiki Kaisha Toshiba | High temperature gold-free wafer bonding for light emitting diodes |
US9012939B2 (en) | 2011-08-02 | 2015-04-21 | Kabushiki Kaisha Toshiba | N-type gallium-nitride layer having multiple conductive intervening layers |
US8865565B2 (en) | 2011-08-02 | 2014-10-21 | Kabushiki Kaisha Toshiba | LED having a low defect N-type layer that has grown on a silicon substrate |
US20130032810A1 (en) | 2011-08-03 | 2013-02-07 | Bridgelux, Inc. | Led on silicon substrate using zinc-sulfide as buffer layer |
US8564010B2 (en) | 2011-08-04 | 2013-10-22 | Toshiba Techno Center Inc. | Distributed current blocking structures for light emitting diodes |
US8686430B2 (en) | 2011-09-07 | 2014-04-01 | Toshiba Techno Center Inc. | Buffer layer for GaN-on-Si LED |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
JP2013229493A (ja) * | 2012-04-26 | 2013-11-07 | Sharp Corp | Iii族窒化物半導体積層基板およびiii族窒化物半導体電界効果トランジスタ |
WO2013177519A1 (en) | 2012-05-24 | 2013-11-28 | Raytheon Company | Liquid crystal control structure, tip-tilt-focus optical phased array and high power adaptive optic |
CA2910592C (en) | 2013-05-24 | 2017-11-21 | Raytheon Company | Adaptive - optics liquid - crystal array device having meander resistors |
US9876102B2 (en) | 2015-07-17 | 2018-01-23 | Mitsubishi Electric Research Laboratories, Inc. | Semiconductor device with multiple carrier channels |
WO2019053619A1 (en) * | 2017-09-18 | 2019-03-21 | King Abdullah University Of Science And Technology | OPTOELECTRONIC DEVICE HAVING BORON NITRIDE ALLOY ELECTRON BLOCKING LAYER AND METHOD OF PRODUCING THE SAME |
CN107731916B (zh) * | 2017-10-12 | 2024-02-13 | 中国电子科技集团公司第十三研究所 | 半导体器件及利用异质结形成金刚石n型导电沟道的方法 |
CN111279495B (zh) * | 2017-10-16 | 2023-06-09 | 阿卜杜拉国王科技大学 | 具有氮化硼合金接触层的iii族氮化物半导体器件及其制造方法 |
CN111223927B (zh) * | 2020-04-22 | 2021-07-30 | 浙江集迈科微电子有限公司 | GaN-金刚石-Si半导体结构、器件及制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5373171A (en) * | 1987-03-12 | 1994-12-13 | Sumitomo Electric Industries, Ltd. | Thin film single crystal substrate |
JP3436278B2 (ja) * | 1994-09-16 | 2003-08-11 | 住友電気工業株式会社 | 電界効果トランジスタ |
DE69521409T2 (de) * | 1995-03-01 | 2002-05-16 | Sumitomo Electric Industries | Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung |
US20050139838A1 (en) * | 2003-12-26 | 2005-06-30 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
FR2875337A1 (fr) * | 2004-09-13 | 2006-03-17 | Picogiga Internat Soc Par Acti | Structures hemt piezoelectriques a desordre d'alliage nul |
-
2006
- 2006-11-08 US US11/557,514 patent/US7557378B2/en active Active
-
2007
- 2007-10-19 WO PCT/US2007/022325 patent/WO2008057193A1/en active Application Filing
- 2007-10-19 EP EP12155538.7A patent/EP2455973B1/de active Active
- 2007-10-19 AT AT07852863T patent/ATE551724T1/de active
- 2007-10-19 EP EP07852863A patent/EP2082431B1/de active Active
-
2009
- 2009-07-06 US US12/497,994 patent/US7968865B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2455973A3 (de) | 2012-09-12 |
EP2082431A1 (de) | 2009-07-29 |
EP2455973A2 (de) | 2012-05-23 |
WO2008057193A1 (en) | 2008-05-15 |
EP2455973B1 (de) | 2016-03-23 |
US7557378B2 (en) | 2009-07-07 |
US20080121897A1 (en) | 2008-05-29 |
EP2082431B1 (de) | 2012-03-28 |
US20100090228A1 (en) | 2010-04-15 |
US7968865B2 (en) | 2011-06-28 |
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