ATE548481T1 - Reinigungsvorrichtung und reinigungsverfahren für einen plasmareaktor - Google Patents

Reinigungsvorrichtung und reinigungsverfahren für einen plasmareaktor

Info

Publication number
ATE548481T1
ATE548481T1 AT07765396T AT07765396T ATE548481T1 AT E548481 T1 ATE548481 T1 AT E548481T1 AT 07765396 T AT07765396 T AT 07765396T AT 07765396 T AT07765396 T AT 07765396T AT E548481 T1 ATE548481 T1 AT E548481T1
Authority
AT
Austria
Prior art keywords
cleaning
plasma reactor
cleaning device
reactor
polarizable
Prior art date
Application number
AT07765396T
Other languages
English (en)
Inventor
Jacques Henri Pelletier
Ana Lacoste
Alexandre Bes
Stephane Jean Louis Bechu
Jerome Sirou
Original Assignee
Centre Nat Rech Scient
Univ Grenoble 1
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Univ Grenoble 1 filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE548481T1 publication Critical patent/ATE548481T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Plasma Technology (AREA)
AT07765396T 2006-06-13 2007-06-13 Reinigungsvorrichtung und reinigungsverfahren für einen plasmareaktor ATE548481T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0605238A FR2902029B1 (fr) 2006-06-13 2006-06-13 Dispositif et procede de nettoyage d'un reacteur par plasma
PCT/EP2007/055830 WO2007144378A2 (fr) 2006-06-13 2007-06-13 Dispositif et procede de nettoyage d'un reacteur par plasma

Publications (1)

Publication Number Publication Date
ATE548481T1 true ATE548481T1 (de) 2012-03-15

Family

ID=37781962

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07765396T ATE548481T1 (de) 2006-06-13 2007-06-13 Reinigungsvorrichtung und reinigungsverfahren für einen plasmareaktor

Country Status (5)

Country Link
US (2) US20100252067A1 (de)
EP (1) EP2035597B1 (de)
AT (1) ATE548481T1 (de)
FR (1) FR2902029B1 (de)
WO (1) WO2007144378A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6832996B2 (en) 1995-06-07 2004-12-21 Arthrocare Corporation Electrosurgical systems and methods for treating tissue
CN103035466B (zh) * 2011-10-08 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种预清洗方法及等离子体设备
US8916056B2 (en) * 2012-10-11 2014-12-23 Varian Semiconductor Equipment Associates, Inc. Biasing system for a plasma processing apparatus
JP7209508B2 (ja) * 2018-10-16 2023-01-20 株式会社東芝 プロセス装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119225A (ja) * 1986-11-06 1988-05-23 Fujitsu Ltd プラズマｃｖｄ装置
JPS63224232A (ja) * 1987-03-13 1988-09-19 Hitachi Ltd プラズマ処理方法および装置
FR2639363B1 (fr) * 1988-11-23 1991-02-22 Centre Nat Rech Scient Procede et dispositif de traitement de surface par plasma, pour un substrat porte par une electrode
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
JPH03150379A (ja) * 1989-11-07 1991-06-26 Fuji Electric Co Ltd プラズマ洗浄方法
JPH03260051A (ja) * 1990-03-09 1991-11-20 Seiko Epson Corp プラズマ酸化法
CH689767A5 (de) * 1992-03-24 1999-10-15 Balzers Hochvakuum Verfahren zur Werkstueckbehandlung in einer Vakuumatmosphaere und Vakuumbehandlungsanlage.
US5688330A (en) * 1992-05-13 1997-11-18 Ohmi; Tadahiro Process apparatus
US5507874A (en) * 1994-06-03 1996-04-16 Applied Materials, Inc. Method of cleaning of an electrostatic chuck in plasma reactors
US5605637A (en) * 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
US6071372A (en) * 1997-06-05 2000-06-06 Applied Materials, Inc. RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
US6010967A (en) * 1998-05-22 2000-01-04 Micron Technology, Inc. Plasma etching methods
US6812648B2 (en) * 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
JP2006185992A (ja) * 2004-12-27 2006-07-13 Plasma Ion Assist Co Ltd プラズマ成膜装置のクリーニング方法

Also Published As

Publication number Publication date
EP2035597B1 (de) 2012-03-07
FR2902029B1 (fr) 2009-01-23
WO2007144378A2 (fr) 2007-12-21
US9812298B2 (en) 2017-11-07
US20100252067A1 (en) 2010-10-07
WO2007144378A3 (fr) 2008-04-24
US20140305467A1 (en) 2014-10-16
EP2035597A2 (de) 2009-03-18
FR2902029A1 (fr) 2007-12-14

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