ATE534147T1 - Photodetektorelement - Google Patents

Photodetektorelement

Info

Publication number
ATE534147T1
ATE534147T1 AT10169281T AT10169281T ATE534147T1 AT E534147 T1 ATE534147 T1 AT E534147T1 AT 10169281 T AT10169281 T AT 10169281T AT 10169281 T AT10169281 T AT 10169281T AT E534147 T1 ATE534147 T1 AT E534147T1
Authority
AT
Austria
Prior art keywords
medium
index
semiconductor layer
photodetector element
region
Prior art date
Application number
AT10169281T
Other languages
English (en)
Inventor
Salim Boutami
de Lamaestre Roch Espiau
Perchec Jerome Le
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE534147T1 publication Critical patent/ATE534147T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Light Receiving Elements (AREA)
AT10169281T 2009-07-13 2010-07-12 Photodetektorelement ATE534147T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0954868A FR2947956A1 (fr) 2009-07-13 2009-07-13 Element photodetecteur

Publications (1)

Publication Number Publication Date
ATE534147T1 true ATE534147T1 (de) 2011-12-15

Family

ID=42078932

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10169281T ATE534147T1 (de) 2009-07-13 2010-07-12 Photodetektorelement

Country Status (6)

Country Link
US (1) US8125043B2 (de)
EP (1) EP2276072B1 (de)
JP (1) JP5785698B2 (de)
CN (1) CN101958356A (de)
AT (1) ATE534147T1 (de)
FR (1) FR2947956A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2940522B1 (fr) * 2008-12-24 2011-03-18 Commissariat Energie Atomique Photodetecteur comprenant une region semiconductrice tres mince
FR2992471B1 (fr) 2012-06-20 2015-05-15 Commissariat Energie Atomique Structure semiconductrice comportant une zone absorbante placee dans une cavite focalisante
FR2992470B1 (fr) * 2012-06-26 2014-08-08 Commissariat Energie Atomique Element photodetecteur pour une radiation lumineuse infrarouge et photodetecteur comprenant un tel element photodetecteur
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
US10177267B2 (en) * 2017-03-03 2019-01-08 Bolb Inc. Photodetector
FR3093235B1 (fr) 2019-02-27 2021-03-12 Commissariat Energie Atomique Structure de détection de rayonnement électromagnétique à haute efficacité d’absorption et un procédé de fabrication d’une telle structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111254A (en) * 1986-07-14 2000-08-29 Lockheed Martin Corporation Infrared radiation detector
JPH039576A (ja) * 1989-06-06 1991-01-17 Fujitsu Ltd 赤外線検知素子
US5373182A (en) * 1993-01-12 1994-12-13 Santa Barbara Research Center Integrated IR and visible detector
JP2001272271A (ja) * 2000-01-17 2001-10-05 Mitsubishi Electric Corp 赤外線センサ
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
JP5410001B2 (ja) * 2003-11-20 2014-02-05 ライトワイヤー，エルエルシー シリコンベースショットキ障壁赤外線光検出器
US7329871B2 (en) * 2005-02-04 2008-02-12 Stc.Unm Plasmonic enhanced infrared detector element
US7305157B2 (en) * 2005-11-08 2007-12-04 Massachusetts Institute Of Technology Vertically-integrated waveguide photodetector apparatus and related coupling methods

Also Published As

Publication number Publication date
FR2947956A1 (fr) 2011-01-14
JP5785698B2 (ja) 2015-09-30
EP2276072B1 (de) 2011-11-16
US20110018087A1 (en) 2011-01-27
JP2011023720A (ja) 2011-02-03
CN101958356A (zh) 2011-01-26
US8125043B2 (en) 2012-02-28
EP2276072A1 (de) 2011-01-19

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