ATE531238T1 - Entladungsquelle mit gasvorhang zum schutz der optik vor partikeln - Google Patents

Entladungsquelle mit gasvorhang zum schutz der optik vor partikeln

Info

Publication number
ATE531238T1
ATE531238T1 AT02759209T AT02759209T ATE531238T1 AT E531238 T1 ATE531238 T1 AT E531238T1 AT 02759209 T AT02759209 T AT 02759209T AT 02759209 T AT02759209 T AT 02759209T AT E531238 T1 ATE531238 T1 AT E531238T1
Authority
AT
Austria
Prior art keywords
gas curtain
particles
optics
protect
discharge source
Prior art date
Application number
AT02759209T
Other languages
English (en)
Inventor
Neal Fornaciari
Michael Kanouff
Original Assignee
Euv Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Euv Llc filed Critical Euv Llc
Application granted granted Critical
Publication of ATE531238T1 publication Critical patent/ATE531238T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Atmospheric Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
AT02759209T 2001-09-18 2002-07-29 Entladungsquelle mit gasvorhang zum schutz der optik vor partikeln ATE531238T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/956,275 US6714624B2 (en) 2001-09-18 2001-09-18 Discharge source with gas curtain for protecting optics from particles
PCT/US2002/024092 WO2003026363A1 (en) 2001-09-18 2002-07-29 Discharge source with gas curtain for protecting optics from particles

Publications (1)

Publication Number Publication Date
ATE531238T1 true ATE531238T1 (de) 2011-11-15

Family

ID=25498019

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02759209T ATE531238T1 (de) 2001-09-18 2002-07-29 Entladungsquelle mit gasvorhang zum schutz der optik vor partikeln

Country Status (6)

Country Link
US (1) US6714624B2 (de)
EP (1) EP1428416B1 (de)
JP (1) JP4510449B2 (de)
KR (1) KR20040035706A (de)
AT (1) ATE531238T1 (de)
WO (1) WO2003026363A1 (de)

Families Citing this family (38)

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US7378673B2 (en) * 2005-02-25 2008-05-27 Cymer, Inc. Source material dispenser for EUV light source
US7372056B2 (en) * 2005-06-29 2008-05-13 Cymer, Inc. LPP EUV plasma source material target delivery system
US7002168B2 (en) * 2002-10-15 2006-02-21 Cymer, Inc. Dense plasma focus radiation source
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
TWI255394B (en) * 2002-12-23 2006-05-21 Asml Netherlands Bv Lithographic apparatus with debris suppression means and device manufacturing method
DE10337667B4 (de) * 2003-08-12 2012-03-22 Xtreme Technologies Gmbh Plasma-Strahlungsquelle und Anordnung zur Erzeugung eines Gasvorhangs für Plasma-Strahlungsquellen
EP1531365A1 (de) 2003-11-11 2005-05-18 ASML Netherlands B.V. Lithographischer Apparat mit Unterdrückung von Kontamination
CN100555082C (zh) * 2003-11-11 2009-10-28 Asml荷兰有限公司 抑制污染的光刻设备及其器件制造方法
US7167232B2 (en) * 2003-12-30 2007-01-23 Asml Netherlands B.V. Lithographic apparatus and radiation source comprising a debris-mitigation system and method for mitigating debris particles in a lithographic apparatus
US6980281B2 (en) * 2004-01-23 2005-12-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101123187B1 (ko) 2004-03-31 2012-03-19 에이에스엠엘 네델란즈 비.브이. 단파 방사의 생성 동안 방사원에 의해 생성되는 입자를제거하기 위한 방법 및 장치
US7208746B2 (en) * 2004-07-14 2007-04-24 Asml Netherlands B.V. Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby
US7145132B2 (en) * 2004-12-27 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, illumination system and debris trapping system
US7251263B2 (en) * 2005-05-23 2007-07-31 Colorado State University Research Foundation Capillary discharge x-ray laser
CN101218543A (zh) 2005-06-14 2008-07-09 皇家飞利浦电子股份有限公司 具有改进气体分布的碎片抑制系统
US7365349B2 (en) * 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
US7180083B2 (en) * 2005-06-27 2007-02-20 Cymer, Inc. EUV light source collector erosion mitigation
JP4693544B2 (ja) * 2005-08-11 2011-06-01 シャープ株式会社 プラズマ生成電極、プラズマ処理装置、および、プラズマ処理方法
US7502446B2 (en) * 2005-10-18 2009-03-10 Alft Inc. Soft x-ray generator
US7453077B2 (en) * 2005-11-05 2008-11-18 Cymer, Inc. EUV light source
JP4904809B2 (ja) * 2005-12-28 2012-03-28 ウシオ電機株式会社 極端紫外光光源装置
US7473908B2 (en) * 2006-07-14 2009-01-06 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
DE102007023444B4 (de) * 2007-05-16 2009-04-09 Xtreme Technologies Gmbh Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen
US7816658B2 (en) * 2007-06-07 2010-10-19 Asml Netherlands B.V. Extreme ultra-violet lithographic apparatus and device manufacturing method
NL1036153A1 (nl) 2007-11-08 2009-05-11 Asml Netherlands Bv Method and system for determining a suppression factor of a suppression system and a lithographic apparatus.
WO2009107063A1 (en) 2008-02-28 2009-09-03 Philips Intellectual Property & Standards Gmbh Debris mitigation device with rotating foil trap and drive assembly
DE102008049494A1 (de) * 2008-09-27 2010-04-08 Xtreme Technologies Gmbh Verfahren und Anordnung zum Betreiben von plasmabasierten kurzwelligen Strahlungsquellen
KR20120003916A (ko) 2009-04-02 2012-01-11 에테하 취리히 데브리 완화 및 냉각된 집광기 광학계를 갖는 극자외선 광원
CN102484938B (zh) 2009-09-01 2014-12-10 株式会社Ihi 等离子体光源
JP2011054376A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
US9066412B2 (en) 2010-04-15 2015-06-23 Asml Netherlands B.V. Systems and methods for cooling an optic
US9268031B2 (en) * 2012-04-09 2016-02-23 Kla-Tencor Corporation Advanced debris mitigation of EUV light source
DE102012213927A1 (de) 2012-08-07 2013-06-06 Carl Zeiss Smt Gmbh Vorrichtung zur Erzeugung eines Gasvorhangs, Gasdüse und EUV-Lithographiesystem damit
CN102978628A (zh) * 2012-11-27 2013-03-20 中国人民解放军空军工程大学 在化学热处理过程中采用激光等离子体冲击波增渗的方法
WO2014131016A1 (en) 2013-02-25 2014-08-28 Kla-Tencor Corporation Method and system for gas flow mitigation of molecular contamination of optics
CN108617070B (zh) * 2013-04-05 2020-10-09 Asml荷兰有限公司 源收集器设备、光刻设备和方法
CN114557136A (zh) * 2019-10-16 2022-05-27 Asml荷兰有限公司 用于辐射源的设备
JP7467174B2 (ja) 2020-03-16 2024-04-15 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法

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DE2625659A1 (de) * 1976-06-08 1977-12-22 Leybold Heraeus Gmbh & Co Kg Einrichtung zur vermeidung von kontaminationen auf einer in einem vakuumrezipienten angeordneten probe
US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
JPS63292553A (ja) * 1987-05-25 1988-11-29 Agency Of Ind Science & Technol Ｘ線発生装置におけるプラズマ飛散防止機構
US5499282A (en) 1994-05-02 1996-03-12 University Of Central Florida Efficient narrow spectral width soft-X-ray discharge sources
US5577092A (en) 1995-01-25 1996-11-19 Kublak; Glenn D. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources
US6031241A (en) 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US5963616A (en) 1997-03-11 1999-10-05 University Of Central Florida Configurations, materials and wavelengths for EUV lithium plasma discharge lamps
US6232613B1 (en) * 1997-03-11 2001-05-15 University Of Central Florida Debris blocker/collector and emission enhancer for discharge sources
US6198792B1 (en) * 1998-11-06 2001-03-06 Euv Llc Wafer chamber having a gas curtain for extreme-UV lithography
US6190835B1 (en) * 1999-05-06 2001-02-20 Advanced Energy Systems, Inc. System and method for providing a lithographic light source for a semiconductor manufacturing process
AU1241401A (en) * 1999-10-27 2001-05-08 Jmar Research, Inc. Method and radiation generating system using microtargets
US6356618B1 (en) * 2000-06-13 2002-03-12 Euv Llc Extreme-UV electrical discharge source

Also Published As

Publication number Publication date
US20030053594A1 (en) 2003-03-20
US6714624B2 (en) 2004-03-30
EP1428416B1 (de) 2011-10-26
WO2003026363A8 (en) 2004-02-19
JP2005503657A (ja) 2005-02-03
EP1428416A1 (de) 2004-06-16
JP4510449B2 (ja) 2010-07-21
KR20040035706A (ko) 2004-04-29
WO2003026363A1 (en) 2003-03-27

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