ATE529900T1 - Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur - Google Patents

Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur

Info

Publication number
ATE529900T1
ATE529900T1 AT07111557T AT07111557T ATE529900T1 AT E529900 T1 ATE529900 T1 AT E529900T1 AT 07111557 T AT07111557 T AT 07111557T AT 07111557 T AT07111557 T AT 07111557T AT E529900 T1 ATE529900 T1 AT E529900T1
Authority
AT
Austria
Prior art keywords
coated conductor
producing
layer architecture
simplified layer
simplified
Prior art date
Application number
AT07111557T
Other languages
English (en)
Inventor
Dirk Isfort
Joachim Bock
Judith Driscoll
Ahmed Kursumovic
Original Assignee
Nexans
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexans filed Critical Nexans
Application granted granted Critical
Publication of ATE529900T1 publication Critical patent/ATE529900T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT07111557T 2007-07-02 2007-07-02 Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur ATE529900T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07111557A EP2012373B1 (de) 2007-07-02 2007-07-02 Verfahren zum Herstellen eines beschichteten Leiters mit vereinfachter Schichtarchitektur

Publications (1)

Publication Number Publication Date
ATE529900T1 true ATE529900T1 (de) 2011-11-15

Family

ID=38695482

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07111557T ATE529900T1 (de) 2007-07-02 2007-07-02 Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur

Country Status (4)

Country Link
US (1) US8008233B2 (de)
EP (1) EP2012373B1 (de)
JP (1) JP5535453B2 (de)
AT (1) ATE529900T1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE495552T1 (de) * 2006-11-17 2011-01-15 Nexans Verfahren zur herstellung eines supraleitfähigen elektrischen leiters
FR2940323B1 (fr) 2008-12-18 2011-02-11 Centre Nat Rech Scient Procede de depot de films d'oxydes sur tubes metalliques textures
EP2472618A1 (de) 2011-01-03 2012-07-04 Nexans Supraleitender ohmischer Fehlerstrombegrenzer
US10068683B1 (en) 2014-06-06 2018-09-04 Southwire Company, Llc Rare earth materials as coating compositions for conductors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6270908B1 (en) 1997-09-02 2001-08-07 Ut-Battelle, Llc Rare earth zirconium oxide buffer layers on metal substrates
US6537689B2 (en) * 1999-11-18 2003-03-25 American Superconductor Corporation Multi-layer superconductor having buffer layer with oriented termination plane
WO2001040536A1 (fr) 1999-11-29 2001-06-07 Fujikura Ltd. Film mince polycristallin et procede de preparation de ce dernier, oxyde supraconducteur et son procede de preparation associe
JP4713012B2 (ja) * 2000-10-31 2011-06-29 財団法人国際超電導産業技術研究センター テープ状酸化物超電導体
WO2004015787A1 (en) * 2001-04-19 2004-02-19 Imperial College Innovations Limited Long superconductor fabrication
DE102004038030B4 (de) * 2004-08-05 2007-10-25 Trithor Gmbh Verfahren zur Herstellung eines Hochtemperatur-Supraleiters
US7683010B2 (en) * 2005-07-29 2010-03-23 Ut-Battelle, Llc Doped LZO buffer layers for laminated conductors
EP1858091B1 (de) * 2006-05-18 2011-04-13 Nexans Leiter, beschichtet mit einem polykristallinen Film verwendbar zur Herstellung von Hochtemperatursupraleitungsschichten
ATE418794T1 (de) * 2006-10-27 2009-01-15 Nexans Verfahren zur herstellung eines supraleitfähigen elektrischen leiters
ATE495552T1 (de) * 2006-11-17 2011-01-15 Nexans Verfahren zur herstellung eines supraleitfähigen elektrischen leiters

Also Published As

Publication number Publication date
US8008233B2 (en) 2011-08-30
EP2012373A1 (de) 2009-01-07
EP2012373B1 (de) 2011-10-19
JP5535453B2 (ja) 2014-07-02
JP2009043714A (ja) 2009-02-26
US20090105080A1 (en) 2009-04-23

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Legal Events

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