JP2009043714A - 単純化された層構造を有する被覆導体 - Google Patents
単純化された層構造を有する被覆導体 Download PDFInfo
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- 239000004020 conductor Substances 0.000 title claims abstract description 46
- 239000002887 superconductor Substances 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000004943 liquid phase epitaxy Methods 0.000 claims abstract description 22
- 229910052796 boron Inorganic materials 0.000 claims abstract description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 10
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 5
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 5
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 5
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 5
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 5
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 5
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 5
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 5
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 55
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 abstract description 7
- 230000004907 flux Effects 0.000 description 27
- 230000008021 deposition Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 13
- 238000004549 pulsed laser deposition Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 238000007735 ion beam assisted deposition Methods 0.000 description 6
- 230000000670 limiting effect Effects 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 238000010587 phase diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000011066 ex-situ storage Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 rare earth metal aluminates Chemical class 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 241000954177 Bangana ariza Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910002230 La2Zr2O7 Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000120 microwave digestion Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】二軸配向組織化基板と、一般式RE2-xB2+xO7(ここで、Reは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Y、Tm、Yb及びLuから選択される少なくとも1種の金属であり、Bは、Zr及びHfから選択される少なくとも1種の金属であり、−0.4≦x≦+0.7である。)を有する材料から構成される鋳型緩衝層と、該鋳型緩衝層上に直接被覆され、ハイブリッド液相エピタキシーにより得られる超伝導体層とを備える被覆導体を提供する。
【選択図】図1
Description
二軸配向組織化金属基板と、
一般式RE2-xB2+xO7(ここで、REは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Y、Tm、Yb及びLuから選択される少なくとも1種の金属であり、Bは、Zr及びHfから選択される少なくとも1種の金属であり、−0.4≦x≦0.7である。)を有する材料から構成される緩衝層と、
該緩衝層上に直接被覆された、ハイブリッド液相エピタキシーによって得ることができる超伝導体層とを備えるものを提供する。
好適な金属及び被覆導体用の基板として使用できるようにこれらの金属を配向組織化するための方法は、当該技術分野において周知である。
図2は、本発明の実施例に従うYBCO層成長の状態図である。
図3は、本発明の実施例に従う被覆導体の標準X線θ−2θスキャン(シータ−2シータ)を示すグラフ図である。
2 超伝導体層
3 液体フラックス層
4 RE供給源
Claims (10)
- 二軸配向組織化基板と、一般式RE2-xB2+xO7(ここで、Reは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Y、Tm、Yb及びLuから選択される少なくとも1種の金属であり、Bは、Zr及びHfから選択される少なくとも1種の金属であり、−0.4≦x≦+0.7である。)を有する材料から構成される鋳型緩衝層と、該鋳型緩衝層上に直接被覆され、ハイブリッド液相エピタキシーにより得られる超伝導体層とを備える被覆導体。
- 前記鋳型緩衝層が有機金属蒸着技術によって得られた、請求項1に記載の被覆導体。
- YBCO層のωロッキングカーブ及びφスキャンの半値全幅についての値の少なくとも一つが前記緩衝層についてのそれぞれの値よりも小さい、請求項1又は2に記載の被覆導体。
- 前記超伝導体層が少なくとも800nm、好ましくは少なくとも1000nmの厚さを有する、請求項1〜3のいずれかに記載の被覆導体。
- BがZrである、請求項1〜4のいずれかに記載の被覆導体。
- RE2-xB2+xO7がLa2Zr2O7である、請求項5に記載の被覆導体。
- 前記超伝導体層がYBCO−123材料から形成された、請求項1〜6のいずれかに記載の被覆導体。
- 請求項1〜7のいずれかに記載の被覆導体の製造方法であって、超伝導体層をハイブリッド液相エピタキシーによって鋳型緩衝層上に被覆する、前記方法。
- 前記鋳型緩衝層を有機金属蒸着法によって二軸配向組織化基板上に蒸着させる、請求項8に記載の方法。
- 一般式RE2-xB2+xO7(ここで、REは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Y、Tm、Yb及びLuから選択される少なくとも1種の金属であり、BはZr及びHfから選択される少なくとも1種の金属であり、−0.4≦x≦+0.7である。)を有する緩衝層の、二軸配向組織化金属基板とハイブリッド液相エピタキシーにより成長する超伝導体層とを備えた被覆導体における、当該緩衝層上で成長する超伝導体層に二軸配向組織を付与するための鋳型緩衝層としての使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07111557.0 | 2007-07-02 | ||
EP07111557A EP2012373B1 (en) | 2007-07-02 | 2007-07-02 | Process for the production of a coated conductor with simplified layer architecture |
Publications (2)
Publication Number | Publication Date |
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JP2009043714A true JP2009043714A (ja) | 2009-02-26 |
JP5535453B2 JP5535453B2 (ja) | 2014-07-02 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008173447A Expired - Fee Related JP5535453B2 (ja) | 2007-07-02 | 2008-07-02 | 単純化された層構造を有する被覆導体 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8008233B2 (ja) |
EP (1) | EP2012373B1 (ja) |
JP (1) | JP5535453B2 (ja) |
AT (1) | ATE529900T1 (ja) |
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ATE495552T1 (de) * | 2006-11-17 | 2011-01-15 | Nexans | Verfahren zur herstellung eines supraleitfähigen elektrischen leiters |
FR2940323B1 (fr) | 2008-12-18 | 2011-02-11 | Centre Nat Rech Scient | Procede de depot de films d'oxydes sur tubes metalliques textures |
EP2472618A1 (en) | 2011-01-03 | 2012-07-04 | Nexans | Superconducting resistive fault current limiter |
US10068683B1 (en) | 2014-06-06 | 2018-09-04 | Southwire Company, Llc | Rare earth materials as coating compositions for conductors |
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US6270908B1 (en) | 1997-09-02 | 2001-08-07 | Ut-Battelle, Llc | Rare earth zirconium oxide buffer layers on metal substrates |
US6537689B2 (en) * | 1999-11-18 | 2003-03-25 | American Superconductor Corporation | Multi-layer superconductor having buffer layer with oriented termination plane |
EP1178129B1 (en) | 1999-11-29 | 2010-12-15 | Fujikura Ltd. | Polycrystalline thin film and method for preparation thereof, and superconducting oxide and method for preparation thereof |
JP4713012B2 (ja) * | 2000-10-31 | 2011-06-29 | 財団法人国際超電導産業技術研究センター | テープ状酸化物超電導体 |
AU2002368162A1 (en) * | 2001-04-19 | 2004-02-25 | Imperial College Innovations Limited | Long superconductor fabrication |
DE102004038030B4 (de) * | 2004-08-05 | 2007-10-25 | Trithor Gmbh | Verfahren zur Herstellung eines Hochtemperatur-Supraleiters |
US7683010B2 (en) * | 2005-07-29 | 2010-03-23 | Ut-Battelle, Llc | Doped LZO buffer layers for laminated conductors |
DE602006021287D1 (de) * | 2006-05-18 | 2011-05-26 | Nexans | Leiter, beschichtet mit einem polykristallinen Film verwendbar zur Herstellung von Hochtemperatursupraleitungsschichten |
ATE418794T1 (de) * | 2006-10-27 | 2009-01-15 | Nexans | Verfahren zur herstellung eines supraleitfähigen elektrischen leiters |
ATE495552T1 (de) * | 2006-11-17 | 2011-01-15 | Nexans | Verfahren zur herstellung eines supraleitfähigen elektrischen leiters |
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2007
- 2007-07-02 AT AT07111557T patent/ATE529900T1/de not_active IP Right Cessation
- 2007-07-02 EP EP07111557A patent/EP2012373B1/en not_active Not-in-force
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2008
- 2008-06-30 US US12/215,924 patent/US8008233B2/en not_active Expired - Fee Related
- 2008-07-02 JP JP2008173447A patent/JP5535453B2/ja not_active Expired - Fee Related
Non-Patent Citations (5)
Title |
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JPN6013026498; Sathyamurthy, S.; Paranthaman, M.; Zhai, H.-Y.; Christen, H. M.; Martin, P. M.; Goyal, A.: 'Lanthanum zirconate: A single buffer layer processed by solution deposition for coated conductor fab' Journal of Materials Research vol. 17, issue 9, 200209, pp. 2181-2184 * |
JPN6013026499; Sathyamurthy, S., Paranthaman, M.P., Zhai, Hong-Ying, Sukill Kang, Christen, Hans M., Cantoni, C.,: 'Solution processing of lanthanum zirconate films as single buffer layers for high Ic YBCO coated con' Applied Superconductivity, IEEE Transactions on Volu * |
JPN6013026500; Knoth, K., Huehne, R., Oswald, S., Schultz, L., Holzapfel, B.: 'Detailed investigations on La2Zr2O7 buffer layers for YBCO-coated conductors prepared by chemical so' Acta Materialia Volume:55, Issue:2, 200701, pp.517-529 * |
JPN6013026501; MacManus-Driscoll, J.L., Kursumovic, A., Maiorov, B., Civale, L., Jia, Q.X., Foltyn, S.R., Wang, H.: 'YBa2Cu3O7 Coated Conductor Grown by Hybrid Liquid Phase Epitaxy' Applied Superconductivity, IEEE Transactions on Volume:17, Issue:2, 200706, pp.2537-2541 * |
JPN7013002059; A. Kursumovic, J. E. Evetts, J. L. MacManus-Driscoll, B. Maiorov, L. Civale, H. Wang, Q. X. Jia, S.: 'High critical current densities in YBa2Cu3O7x films grown at high rates by hybrid liquid phase epita' Applied Physics Letters Volume:87, Issue:25, 200512, pp.2025࿱ * |
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EP2012373A1 (en) | 2009-01-07 |
US20090105080A1 (en) | 2009-04-23 |
EP2012373B1 (en) | 2011-10-19 |
US8008233B2 (en) | 2011-08-30 |
JP5535453B2 (ja) | 2014-07-02 |
ATE529900T1 (de) | 2011-11-15 |
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