ATE527394T1 - Herstellung von siliziumoxid-wellenleitern mit minimaler absorption - Google Patents

Herstellung von siliziumoxid-wellenleitern mit minimaler absorption

Info

Publication number
ATE527394T1
ATE527394T1 AT01270640T AT01270640T ATE527394T1 AT E527394 T1 ATE527394 T1 AT E527394T1 AT 01270640 T AT01270640 T AT 01270640T AT 01270640 T AT01270640 T AT 01270640T AT E527394 T1 ATE527394 T1 AT E527394T1
Authority
AT
Austria
Prior art keywords
production
silicon oxide
minimal absorption
waveguides
oxide waveguides
Prior art date
Application number
AT01270640T
Other languages
English (en)
Inventor
Luc Ouellet
Manuel Grondin
Original Assignee
Dalsa Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalsa Semiconductor Inc filed Critical Dalsa Semiconductor Inc
Application granted granted Critical
Publication of ATE527394T1 publication Critical patent/ATE527394T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12038—Glass (SiO2 based materials)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12169—Annealing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Optical Integrated Circuits (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
AT01270640T 2000-12-12 2001-12-06 Herstellung von siliziumoxid-wellenleitern mit minimaler absorption ATE527394T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0030236A GB2370043A (en) 2000-12-12 2000-12-12 Chemical treatment of silica films
PCT/CA2001/001753 WO2002048429A1 (en) 2000-12-12 2001-12-06 Manufacture of silica waveguides with minimal absorption

Publications (1)

Publication Number Publication Date
ATE527394T1 true ATE527394T1 (de) 2011-10-15

Family

ID=9904890

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01270640T ATE527394T1 (de) 2000-12-12 2001-12-06 Herstellung von siliziumoxid-wellenleitern mit minimaler absorption

Country Status (6)

Country Link
US (1) US6537623B2 (de)
EP (1) EP1404892B1 (de)
AT (1) ATE527394T1 (de)
AU (1) AU2002215742A1 (de)
GB (1) GB2370043A (de)
WO (1) WO2002048429A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887514B2 (en) * 2001-05-31 2005-05-03 Dalsa Semiconductor Inc. Method of depositing optical films
US7006753B2 (en) 2002-12-18 2006-02-28 General Electric Company Optical waveguide devices with deuterated amorphous carbon core structures
EP1651988A1 (de) * 2003-08-04 2006-05-03 Pirelli & C. S.p.A. Integrierte optische wellenleiterstruktur mit niedrigen koppelverlusten an ein externes optisches feld
US7901870B1 (en) 2004-05-12 2011-03-08 Cirrex Systems Llc Adjusting optical properties of optical thin films
US7565084B1 (en) 2004-09-15 2009-07-21 Wach Michael L Robustly stabilizing laser systems
US9575335B1 (en) * 2014-01-10 2017-02-21 Oakley, Inc. Eyewear with chroma enhancement for specific activities

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887733A (en) * 1974-04-24 1975-06-03 Motorola Inc Doped oxide reflow process
US4585492A (en) * 1984-07-30 1986-04-29 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced hole trapping
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide
JPS6463904A (en) * 1987-09-03 1989-03-09 Fujikura Ltd Production of glass waveguide
US4943558A (en) * 1988-04-15 1990-07-24 Ford Motor Company Preparation of superconducting oxide films using a pre-oxygen nitrogen anneal
DE69030822T2 (de) * 1989-02-14 1997-11-27 Seiko Epson Corp Halbleitervorrichtung und Verfahren zu ihrer Herstellung
EP0471845B1 (de) * 1989-05-07 1995-11-15 OHMI, Tadahiro Verfahren zur herstellung eines siliziumoxydfilmes
US5699035A (en) * 1991-12-13 1997-12-16 Symetrix Corporation ZnO thin-film varistors and method of making the same
US5610105A (en) * 1992-10-23 1997-03-11 Vlsi Technology, Inc. Densification in an intermetal dielectric film
US5851602A (en) * 1993-12-09 1998-12-22 Applied Materials, Inc. Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors
US5614270A (en) * 1996-02-09 1997-03-25 National Science Council Method of improving electrical characteristics of a liquid phase deposited silicon dioxide film by plasma treatment
GB2312525A (en) * 1996-04-24 1997-10-29 Northern Telecom Ltd Providing cladding on planar optical waveguide by heating to flow
GB2314346A (en) * 1996-06-22 1997-12-24 Northern Telecom Ltd Rapid thermal annealing
US5966627A (en) * 1996-08-30 1999-10-12 Lucent Technologies Inc. In-situ doped silicon layers
WO1999023690A1 (en) * 1997-11-03 1999-05-14 Asm America, Inc. Method of processing wafers with low mass support

Also Published As

Publication number Publication date
US20020071914A1 (en) 2002-06-13
EP1404892A1 (de) 2004-04-07
GB0030236D0 (en) 2001-01-24
EP1404892B1 (de) 2011-10-05
US6537623B2 (en) 2003-03-25
AU2002215742A1 (en) 2002-06-24
WO2002048429A1 (en) 2002-06-20
GB2370043A (en) 2002-06-19

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Legal Events

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