ATE520289T1 - Extrem ultraviolette lichtquellenvorrichtung - Google Patents
Extrem ultraviolette lichtquellenvorrichtungInfo
- Publication number
- ATE520289T1 ATE520289T1 AT10000408T AT10000408T ATE520289T1 AT E520289 T1 ATE520289 T1 AT E520289T1 AT 10000408 T AT10000408 T AT 10000408T AT 10000408 T AT10000408 T AT 10000408T AT E520289 T1 ATE520289 T1 AT E520289T1
- Authority
- AT
- Austria
- Prior art keywords
- raw material
- extreme ultraviolet
- energy beam
- electrodes
- light source
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009010691A JP5245857B2 (ja) | 2009-01-21 | 2009-01-21 | 極端紫外光光源装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE520289T1 true ATE520289T1 (de) | 2011-08-15 |
Family
ID=42017302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT10000408T ATE520289T1 (de) | 2009-01-21 | 2010-01-18 | Extrem ultraviolette lichtquellenvorrichtung |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2211594B1 (de) |
JP (1) | JP5245857B2 (de) |
AT (1) | ATE520289T1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5659711B2 (ja) * | 2010-11-10 | 2015-01-28 | ウシオ電機株式会社 | 極端紫外光光源装置における照度分布の検出方法および極端紫外光光源装置 |
WO2013072154A1 (en) | 2011-11-15 | 2013-05-23 | Asml Netherlands B.V. | Radiation source and method for operating the same, lithographic apparatus comprising the radiation source, and device manufacturing method |
DE102013204444A1 (de) * | 2013-03-14 | 2014-09-18 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für ein Maskeninspektionssystem sowie Maskeninspektionssystem mit einer derartigen Beleuchtungsoptik |
WO2015097820A1 (ja) * | 2013-12-26 | 2015-07-02 | ギガフォトン株式会社 | ターゲット生成装置 |
JP2023149175A (ja) * | 2022-03-30 | 2023-10-13 | ウシオ電機株式会社 | 光源装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4052155B2 (ja) | 2003-03-17 | 2008-02-27 | ウシオ電機株式会社 | 極端紫外光放射源及び半導体露光装置 |
DE10342239B4 (de) | 2003-09-11 | 2018-06-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung |
JP2005294087A (ja) * | 2004-04-01 | 2005-10-20 | Nikon Corp | 光源ユニット、照明光学装置、露光装置および露光方法 |
DE102005023060B4 (de) * | 2005-05-19 | 2011-01-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasentladungs-Strahlungsquelle, insbesondere für EUV-Strahlung |
DE602007010765D1 (de) * | 2006-05-16 | 2011-01-05 | Philips Intellectual Property | Verfahren zur erhöhung der umwandlungseffizienz einer euv- und/oder weichen röntgenstrahlenlampe und entsprechendes gerät |
JP2008270149A (ja) * | 2007-03-28 | 2008-11-06 | Tokyo Institute Of Technology | 極端紫外光光源装置および極端紫外光発生方法 |
US7615767B2 (en) * | 2007-05-09 | 2009-11-10 | Asml Netherlands B.V. | Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby |
-
2009
- 2009-01-21 JP JP2009010691A patent/JP5245857B2/ja active Active
-
2010
- 2010-01-18 EP EP10000408A patent/EP2211594B1/de active Active
- 2010-01-18 AT AT10000408T patent/ATE520289T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2211594B1 (de) | 2011-08-10 |
EP2211594A2 (de) | 2010-07-28 |
EP2211594A3 (de) | 2011-02-02 |
JP2010170772A (ja) | 2010-08-05 |
JP5245857B2 (ja) | 2013-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |