ATE518260T1 - Tetracarboxylische diimidverbindungen auf naphthalenbasis als halbleiterwerkstoffe - Google Patents

Tetracarboxylische diimidverbindungen auf naphthalenbasis als halbleiterwerkstoffe

Info

Publication number
ATE518260T1
ATE518260T1 AT07862202T AT07862202T ATE518260T1 AT E518260 T1 ATE518260 T1 AT E518260T1 AT 07862202 T AT07862202 T AT 07862202T AT 07862202 T AT07862202 T AT 07862202T AT E518260 T1 ATE518260 T1 AT E518260T1
Authority
AT
Austria
Prior art keywords
substituent
substituted
naphthalene
film transistor
imide
Prior art date
Application number
AT07862202T
Other languages
German (de)
English (en)
Inventor
Deepak Shukla
Thomas Robert Welter
Jeffrey Todd Carey
Manju Rajeswaran
Wendy G Ahearn
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of ATE518260T1 publication Critical patent/ATE518260T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
    • C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
AT07862202T 2006-12-07 2007-11-21 Tetracarboxylische diimidverbindungen auf naphthalenbasis als halbleiterwerkstoffe ATE518260T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/567,954 US7804087B2 (en) 2006-12-07 2006-12-07 Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
PCT/US2007/024342 WO2008057610A2 (en) 2006-12-07 2007-11-21 Naphthalene-based tetracarboxylic diimide compounds as semiconductor materials

Publications (1)

Publication Number Publication Date
ATE518260T1 true ATE518260T1 (de) 2011-08-15

Family

ID=39183038

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07862202T ATE518260T1 (de) 2006-12-07 2007-11-21 Tetracarboxylische diimidverbindungen auf naphthalenbasis als halbleiterwerkstoffe

Country Status (5)

Country Link
US (1) US7804087B2 (https=)
EP (1) EP2089919B1 (https=)
JP (1) JP5336385B2 (https=)
AT (1) ATE518260T1 (https=)
WO (1) WO2008057610A2 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4921982B2 (ja) * 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
WO2007146250A2 (en) * 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
WO2008063609A2 (en) 2006-11-17 2008-05-29 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
CN101622253B (zh) * 2007-01-08 2015-04-29 破立纪元有限公司 用于制备基于芳烃-双（二羧酰亚胺）的半导体材料的方法和用于制备它们的相关中间体
WO2008091670A2 (en) * 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
US7649199B2 (en) 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
JP5320921B2 (ja) 2008-09-16 2013-10-23 株式会社リコー 画像形成装置、画像形成方法、画像形成プログラム
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
US8309394B2 (en) * 2010-01-22 2012-11-13 Eastman Kodak Company Method of making N-type semiconductor devices
TWI422573B (zh) * 2010-02-11 2014-01-11 Nat Univ Tsing Hua 有機薄膜電晶體暨其製備方法
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
DE102010061963A1 (de) * 2010-11-25 2012-05-31 Bayer Materialscience Aktiengesellschaft EL-Elemente enthaltend eine Pigmentschicht mit vernetzenden Systemen mit blockierten Isocyanat-Gruppen
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
CN106688050B (zh) 2014-06-11 2018-09-18 伊斯曼柯达公司 具有带含硫代硫酸盐聚合物的电介质层的器件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2087133A (en) * 1933-04-15 1937-07-13 Gen Aniline Works Inc Dyestuffs of the naphthalene-1.4.5.8-tetracarboxylic acid dhmide series
DE2951349A1 (de) 1979-12-20 1981-07-02 Bayer Ag, 5090 Leverkusen Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
JPH0527457A (ja) * 1991-07-19 1993-02-05 Kao Corp 電子写真感光体
US5468583A (en) * 1994-12-28 1995-11-21 Eastman Kodak Company Cyclic bis-dicarboximide electron transport compounds for electrophotography
US6387727B1 (en) * 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
US6794102B2 (en) * 2002-07-17 2004-09-21 Xerox Corporation Naphthalene tetracarboxylic diimide dimers
EP1434282A3 (en) * 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
US6861664B2 (en) * 2003-07-25 2005-03-01 Xerox Corporation Device with n-type semiconductor
JP4723812B2 (ja) * 2004-01-22 2011-07-13 三井化学株式会社 ナフタレンカルボン酸誘導体を用いた有機薄膜トランジスタ
JP4921982B2 (ja) * 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
US7422777B2 (en) * 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

Also Published As

Publication number Publication date
JP5336385B2 (ja) 2013-11-06
EP2089919A2 (en) 2009-08-19
WO2008057610A2 (en) 2008-05-15
WO2008057610A3 (en) 2008-07-24
US20080135833A1 (en) 2008-06-12
EP2089919B1 (en) 2011-07-27
US7804087B2 (en) 2010-09-28
WO2008057610A8 (en) 2009-07-23
JP2010509789A (ja) 2010-03-25

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