ATE515798T1 - Speicherung eines bildes in einem integrierten schaltkreis - Google Patents
Speicherung eines bildes in einem integrierten schaltkreisInfo
- Publication number
- ATE515798T1 ATE515798T1 AT09167014T AT09167014T ATE515798T1 AT E515798 T1 ATE515798 T1 AT E515798T1 AT 09167014 T AT09167014 T AT 09167014T AT 09167014 T AT09167014 T AT 09167014T AT E515798 T1 ATE515798 T1 AT E515798T1
- Authority
- AT
- Austria
- Prior art keywords
- shinning
- storing
- image
- substrate
- integrated circuit
- Prior art date
Links
- 238000001465 metallisation Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 102100022769 POC1 centriolar protein homolog B Human genes 0.000 abstract 2
- 101710125069 POC1 centriolar protein homolog B Proteins 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005192 partition Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0855628 | 2008-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE515798T1 true ATE515798T1 (de) | 2011-07-15 |
Family
ID=40418935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09167014T ATE515798T1 (de) | 2008-08-19 | 2009-07-31 | Speicherung eines bildes in einem integrierten schaltkreis |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8344391B2 (de) |
| EP (1) | EP2157608B1 (de) |
| AT (1) | ATE515798T1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2959867B1 (fr) * | 2010-05-05 | 2013-08-16 | Commissariat Energie Atomique | Dispositif microelectronique a portions disjointes de semi-conducteur et procede de realisation d'un tel dispositif |
| US8975748B1 (en) * | 2011-06-07 | 2015-03-10 | Secure Silicon Layer, Inc. | Semiconductor device having features to prevent reverse engineering |
| CN105789220B (zh) * | 2016-03-24 | 2019-05-14 | 京东方科技集团股份有限公司 | 一种双栅线阵列基板、测试方法、显示面板和显示装置 |
| FR3080948A1 (fr) | 2018-05-02 | 2019-11-08 | Stmicroelectronics (Rousset) Sas | Circuit integre comprenant un element capacitif, et procede de fabrication |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7139028B2 (en) * | 2000-10-17 | 2006-11-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6759262B2 (en) * | 2001-12-18 | 2004-07-06 | Agilent Technologies, Inc. | Image sensor with pixel isolation system and manufacturing method therefor |
| US20060203591A1 (en) * | 2005-03-11 | 2006-09-14 | Lee Dong K | One time programmable read-only memory comprised of fuse and two selection transistors |
| KR100906060B1 (ko) * | 2007-09-28 | 2009-07-03 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
| US8709855B2 (en) * | 2008-06-05 | 2014-04-29 | International Business Machines Corporation | Intralevel conductive light shield |
-
2009
- 2009-07-31 AT AT09167014T patent/ATE515798T1/de not_active IP Right Cessation
- 2009-07-31 EP EP09167014A patent/EP2157608B1/de active Active
- 2009-08-10 US US12/538,336 patent/US8344391B2/en active Active
-
2012
- 2012-09-13 US US13/615,104 patent/US8592288B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2157608A1 (de) | 2010-02-24 |
| US20130011944A1 (en) | 2013-01-10 |
| EP2157608B1 (de) | 2011-07-06 |
| US20100059766A1 (en) | 2010-03-11 |
| US8592288B2 (en) | 2013-11-26 |
| US8344391B2 (en) | 2013-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012084865A5 (ja) | 半導体装置の作製方法 | |
| EP3128534A3 (de) | Ferroelektrische speichervorrichtung und herstellungsverfahren dafür | |
| GB2453492A (en) | Organic el device and manufacturing method thereof | |
| TW200715514A (en) | Semiconductor chip, display panel using the same, and methods of manufacturing semiconductor chip and display panel using the same | |
| WO2009066434A1 (ja) | 電界効果トランジスタおよびその製造方法 | |
| WO2007120891A3 (en) | Method for forming bit line contacts and bit lines during the formation of a flash memory device, and devices including the bit lines awd bit line contacts | |
| TW200614507A (en) | Finfet transistor process | |
| EP3144960A3 (de) | Halbleiterbauelement | |
| EP2383778A3 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| JP2016096545A5 (de) | ||
| TW200834198A (en) | Display device and method of producing the same | |
| EP4024474A3 (de) | Strukturen mit erweitertem drain für hochspannungsfeldeffekttransistoren | |
| TW200705671A (en) | Thin film transistor substrate and method of making the same | |
| EP2293335A3 (de) | Halbleitervorrichtung mit einem Feldeffekttransistor | |
| JP2011227981A5 (ja) | 半導体装置 | |
| TW200729511A (en) | Semiconductor device | |
| TW200742039A (en) | Method for fabricating IT-DRAM on bulk silicon | |
| ATE515798T1 (de) | Speicherung eines bildes in einem integrierten schaltkreis | |
| JP2012079293A5 (de) | ||
| EP1903601A3 (de) | Elektronischer Zeitschalter mit Schwebegattertransistoren und Verfahren zum Initialisieren desselben | |
| TW200620446A (en) | Removing liquid and removing method of copper deteriorated layer containing copper oxide | |
| JP2011124560A5 (de) | ||
| JP2012003832A5 (ja) | 半導体装置 | |
| CN104392991B (zh) | 一种阵列基板及其制备方法、显示装置 | |
| JP2016518723A5 (de) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |