ATE512114T1 - Dreidimensionale struktur mit sehr hoher dichte - Google Patents

Dreidimensionale struktur mit sehr hoher dichte

Info

Publication number
ATE512114T1
ATE512114T1 AT09169175T AT09169175T ATE512114T1 AT E512114 T1 ATE512114 T1 AT E512114T1 AT 09169175 T AT09169175 T AT 09169175T AT 09169175 T AT09169175 T AT 09169175T AT E512114 T1 ATE512114 T1 AT E512114T1
Authority
AT
Austria
Prior art keywords
blades
high density
dimensional structure
micrometer
recess
Prior art date
Application number
AT09169175T
Other languages
German (de)
English (en)
Inventor
Jean-Luc Morand
Original Assignee
St Microelectronics Tours Sas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Tours Sas filed Critical St Microelectronics Tours Sas
Application granted granted Critical
Publication of ATE512114T1 publication Critical patent/ATE512114T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/007—For controlling stiffness, e.g. ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/10—Fuel cells with solid electrolytes
    • H01M8/12—Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
    • H01M8/1286—Fuel cells applied on a support, e.g. miniature fuel cells deposited on silica supports
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Artificial Fish Reefs (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
AT09169175T 2008-09-03 2009-09-01 Dreidimensionale struktur mit sehr hoher dichte ATE512114T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0855906 2008-09-03

Publications (1)

Publication Number Publication Date
ATE512114T1 true ATE512114T1 (de) 2011-06-15

Family

ID=40602264

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09169175T ATE512114T1 (de) 2008-09-03 2009-09-01 Dreidimensionale struktur mit sehr hoher dichte

Country Status (3)

Country Link
US (1) US8710598B2 (fr)
EP (1) EP2161238B1 (fr)
AT (1) ATE512114T1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349786B2 (en) * 2011-08-25 2016-05-24 King Abdullah University Of Science And Technology Fractal structures for fixed MEMS capacitors
US9418985B2 (en) 2013-07-16 2016-08-16 Qualcomm Incorporated Complete system-on-chip (SOC) using monolithic three dimensional (3D) integrated circuit (IC) (3DIC) technology
US11496820B2 (en) * 2016-12-29 2022-11-08 Gmems Tech Shenzhen Limited MEMS device with quadrilateral trench and insert
WO2019018446A1 (fr) 2017-07-17 2019-01-24 Fractal Heatsink Technologies, LLC Système et procédé pour dissipateur thermique multi-fractal

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962713A (en) * 1972-06-02 1976-06-08 Texas Instruments Incorporated Large value capacitor
DE202007003877U1 (de) * 2007-01-25 2007-08-23 Osram Opto Semiconductors Gmbh Elektronische Vorrichtung

Also Published As

Publication number Publication date
US8710598B2 (en) 2014-04-29
US20100055507A1 (en) 2010-03-04
EP2161238A1 (fr) 2010-03-10
EP2161238B1 (fr) 2011-06-08

Similar Documents

Publication Publication Date Title
MX2010004896A (es) Produccion de capas de estado solido independientes mediante procesamiento termico de sustratos con un polimero.
PL2165371T3 (pl) Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem
WO2011122882A3 (fr) Substrat pour modèle semi-conducteur, élément émetteur de lumière utilisant un substrat pour modèle semi-conducteur, et leur procédé de production
ATE512114T1 (de) Dreidimensionale struktur mit sehr hoher dichte
ATE545182T1 (de) Verfahren zur herstellung eines oberflächenemissionslasers
ATE463842T1 (de) Texturierte transparente leitfähige schicht und herstellungsverfahren dafür
RU2007132534A (ru) Стенка с пазом с пленочным охлаждением и способ ее производства
GB0803371D0 (en) Organic electronic device structures and fabrication methods
WO2008040760A3 (fr) Procédé et appareil de fabrication d'un panneau à grande surface, panneau à grande surface et ensemble de panneaux individuels
WO2013184370A3 (fr) Plaque (acoustique) absorbant les sons
WO2007061459A3 (fr) Nouveau substrats en produits industriels a base de fibre de bois et leur formation par traitement laser
ATE520148T1 (de) Vorrichtung zum beschichten einer vielzahl in dichtester packung auf einem suszeptor angeordneter substrate
ATE531668T1 (de) Durch änderungen der umgebung physisch umformbare oberflächen
WO2007007210A3 (fr) Procede de dissolution et appareil de simulation a grande echelle de formations multicouches
FI3687791T3 (fi) Kipsilevyt, joissa on sisäisiä kerroksia, ja menetelmiä niiden valmistamiseksi
JP2012119481A5 (fr)
GB0700917D0 (en) Structures with improved properties
WO2007025521A3 (fr) Procede pour produire un composant semi-conducteur presentant une metallisation planaire et composant semi-conducteur
WO2008129815A1 (fr) Pré-imprégné avec support, procédé de fabrication du pré-imprégné, planche de câblage imprimé multicouche et dispositif semiconducteur
WO2008008570A3 (fr) Sciage des coins de dalles sur des substrats de cartes de contrôle
WO2018112392A8 (fr) Plaques de plâtre et leurs procédés de fabrication
WO2008016618A3 (fr) Appareil et procédé pour une individualisation de guides d'ondes polymères à l'aide de la photolithographie
ATE525500T1 (de) Verfahren zur herstellung von diamantsubstraten
SG11201805559YA (en) Hybrid structure for a surface acoustic wave device
GB2507693A (en) Saw filter having planar barrier layer and method of making

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties